2SD83 Datasheet and Replacement
Type Designator: 2SD83
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 150
V
Maximum Collector-Emitter Voltage |Vce|: 75
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 6
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 1
MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO3
-
BJT ⓘ Cross-Reference Search
2SD83 Datasheet (PDF)
0.1. Size:96K fuji
2sd833.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
0.2. Size:101K fuji
2sd835.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
0.5. Size:213K inchange semiconductor
2sd833.pdf
isc Silicon NPN Darlington Power Transistor 2SD833DESCRIPTIONHigh DC Current Gain-: h = 4000(Min) @I = 3AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power ampli
0.6. Size:213K inchange semiconductor
2sd835.pdf
isc Silicon NPN Darlington Power Transistor 2SD835DESCRIPTIONHigh DC Current Gain-: h = 400(Min) @I = 4AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid driversMotor controlsSwitching regulatorsABSOLUTE M
0.7. Size:195K inchange semiconductor
2sd836.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD836DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 2AFE CHigh Switching SpeedComplement to Type 2SB750Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
0.8. Size:211K inchange semiconductor
2sd837.pdf
isc Silicon NPN Darlington Power Transistor 2SD837DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
0.9. Size:214K inchange semiconductor
2sd834.pdf
isc Silicon NPN Darlington Power Transistor 2SD834DESCRIPTIONHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CELow Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CWide Area of Safe OperationHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid drivers
Datasheet: 2SD825A
, 2SD826
, 2SD826E
, 2SD826F
, 2SD826G
, 2SD827
, 2SD828
, 2SD829
, 2SA1943
, 2SD830
, 2SD831
, 2SD832
, 2SD833
, 2SD834
, 2SD835
, 2SD836
, 2SD836A
.
Keywords - 2SD83 transistor datasheet
2SD83 cross reference
2SD83 equivalent finder
2SD83 lookup
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