2SD834 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD834
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 250 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 3000
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar 2SD834

2SD834 Datasheet (PDF)

..1. Size:125K fuji
2sd834.pdf

..2. Size:214K inchange semiconductor
2sd834.pdf

isc Silicon NPN Darlington Power Transistor 2SD834DESCRIPTIONHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CELow Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CWide Area of Safe OperationHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid drivers

9.1. Size:96K fuji
2sd833.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

9.2. Size:101K fuji
2sd835.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

9.3. Size:25K no
2sd838.pdf

9.4. Size:213K inchange semiconductor
2sd833.pdf

isc Silicon NPN Darlington Power Transistor 2SD833DESCRIPTIONHigh DC Current Gain-: h = 4000(Min) @I = 3AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power ampli

9.5. Size:213K inchange semiconductor
2sd835.pdf

isc Silicon NPN Darlington Power Transistor 2SD835DESCRIPTIONHigh DC Current Gain-: h = 400(Min) @I = 4AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid driversMotor controlsSwitching regulatorsABSOLUTE M

9.6. Size:195K inchange semiconductor
2sd836.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD836DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 2AFE CHigh Switching SpeedComplement to Type 2SB750Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a

9.7. Size:211K inchange semiconductor
2sd837.pdf

isc Silicon NPN Darlington Power Transistor 2SD837DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N3621

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050