2SD834 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD834
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO220
2SD834 Transistor Equivalent Substitute - Cross-Reference Search
2SD834 Datasheet (PDF)
2sd834.pdf
isc Silicon NPN Darlington Power Transistor 2SD834DESCRIPTIONHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CELow Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CWide Area of Safe OperationHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid drivers
2sd833.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd835.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd833.pdf
isc Silicon NPN Darlington Power Transistor 2SD833DESCRIPTIONHigh DC Current Gain-: h = 4000(Min) @I = 3AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power ampli
2sd835.pdf
isc Silicon NPN Darlington Power Transistor 2SD835DESCRIPTIONHigh DC Current Gain-: h = 400(Min) @I = 4AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid driversMotor controlsSwitching regulatorsABSOLUTE M
2sd836.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD836DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 2AFE CHigh Switching SpeedComplement to Type 2SB750Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
2sd837.pdf
isc Silicon NPN Darlington Power Transistor 2SD837DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
