2SD917 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD917  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 330 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TOP3

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2SD917 datasheet

 ..1. Size:91K  panasonic
 2sd917.pdf pdf_icon

2SD917

 ..2. Size:212K  inchange semiconductor
 2sd917.pdf pdf_icon

2SD917

isc Silicon NPN Power Transistor 2SD917 DESCRIPTION High Collector-Base Breakdown Voltage- V = 330V(Min) (BR)CBO High Power Dissipation High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.1. Size:94K  fuji
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2SD917

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.2. Size:213K  inchange semiconductor
 2sd916.pdf pdf_icon

2SD917

isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION High DC Current Gain Low Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay& solenoid drivers Motor controls General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

MOSTRAR MÁS

Otros transistores... 2SD91, 2SD910, 2SD911, 2SD912, 2SD913, 2SD914, 2SD915, 2SD916, 8550, 2SD918, 2SD919, 2SD92, 2SD920, 2SD921, 2SD922, 2SD923, 2SD926