2SD917 Datasheet. Specs and Replacement
Type Designator: 2SD917 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TOP3
2SD917 Substitution
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2SD917 datasheet
isc Silicon NPN Power Transistor 2SD917 DESCRIPTION High Collector-Base Breakdown Voltage- V = 330V(Min) (BR)CBO High Power Dissipation High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION High DC Current Gain Low Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay& solenoid drivers Motor controls General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
Detailed specifications: 2SD91, 2SD910, 2SD911, 2SD912, 2SD913, 2SD914, 2SD915, 2SD916, 8550, 2SD918, 2SD919, 2SD92, 2SD920, 2SD921, 2SD922, 2SD923, 2SD926
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