2SD930 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD930  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 200 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5000

Encapsulados: TO218

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2SD930 datasheet

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 2sd930.pdf pdf_icon

2SD930

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

 9.1. Size:189K  inchange semiconductor
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2SD930

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD935 DESCRIPTION With TO-3 Package Low collector saturation voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

Otros transistores... 2SD921, 2SD922, 2SD923, 2SD926, 2SD927, 2SD928, 2SD929, 2SD93, 2222A, 2SD931, 2SD932, 2SD933, 2SD934, 2SD935, 2SD936, 2SD937, 2SD938