All Transistors. 2SD930 Datasheet

 

2SD930 Datasheet and Replacement


   Type Designator: 2SD930
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO218

 2SD930 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD930 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
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2SD930

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD930 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... See More ⇒

 9.1. Size:189K  inchange semiconductor
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2SD930

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD935 DESCRIPTION With TO-3 Package Low collector saturation voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

Datasheet: 2SD921 , 2SD922 , 2SD923 , 2SD926 , 2SD927 , 2SD928 , 2SD929 , 2SD93 , 2222A , 2SD931 , 2SD932 , 2SD933 , 2SD934 , 2SD935 , 2SD936 , 2SD937 , 2SD938 .

History: DNLS160V | AC160 | CHDTC115EKGP | MMUN2131 | DRA2115G | TI808 | AC152

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