2SD930 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD930
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO218
2SD930 Transistor Equivalent Substitute - Cross-Reference Search
2SD930 Datasheet (PDF)
2sd930.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD930DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOHigh ReliabilityGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC
2sd935.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD935DESCRIPTIONWith TO-3 PackageLow collector saturation voltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driver and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
