2SD930 Datasheet and Replacement
Type Designator: 2SD930
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO218
2SD930 Substitution
2SD930 Datasheet (PDF)
2sd930.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD930DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 1A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOHigh ReliabilityGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC
2sd935.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD935DESCRIPTIONWith TO-3 PackageLow collector saturation voltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driver and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: 2SD921 , 2SD922 , 2SD923 , 2SD926 , 2SD927 , 2SD928 , 2SD929 , 2SD93 , SS8050 , 2SD931 , 2SD932 , 2SD933 , 2SD934 , 2SD935 , 2SD936 , 2SD937 , 2SD938 .
History: DDTC113TKA | PBSS5580PA | SU519 | TFH1037 | GES3905 | GTA1 | 2SC5444
Keywords - 2SD930 transistor datasheet
2SD930 cross reference
2SD930 equivalent finder
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History: DDTC113TKA | PBSS5580PA | SU519 | TFH1037 | GES3905 | GTA1 | 2SC5444



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