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3N115 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3N115
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 12 MHz
   Capacitancia de salida (Cc): 10 pF
   Paquete / Cubierta: TO72
 

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3N115 Datasheet (PDF)

 0.1. Size:132K  chenmko
 3n1151gp.pdf pdf_icon

3N115

CHENMKO ENTERPRISE CO.,LTD3N1151GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* Low collector-emitter saturation voltage * Large collector current .114(2.90).307(7.80)* High power dissipation .059(1.50).098(2.50).291(7.40).043(1.10).161(4.10

 0.2. Size:769K  way-on
 wm03n115a.pdf pdf_icon

3N115

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR

Otros transistores... 3N107 , 3N108 , 3N109 , 3N110 , 3N111 , 3N112 , 3N113 , 3N114 , D965 , 3N116 , 3N117 , 3N118 , 3N119 , 3N120 , 3N121 , 3N123 , 3N127 .

History: BC558VI | TD366 | BC551 | CSC383TM

 

 
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