3N115 Specs and Replacement
Type Designator: 3N115
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 10 pF
Package: TO72
3N115 Substitution
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3N115 datasheet
CHENMKO ENTERPRISE CO.,LTD 3N1151GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (TO-126) TO-126 * Low collector-emitter saturation voltage * Large collector current .114(2.90) .307(7.80) * High power dissipation .059(1.50) .098(2.50) .291(7.40) .043(1.10) .161(4.10... See More ⇒
WM03N115A 30V N-Channel Enhancement Mode Power MOSFET Description D D WM03N115A uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = 30V, I = 11.5A DS D SOP-8L R ... See More ⇒
Detailed specifications: 3N107 , 3N108 , 3N109 , 3N110 , 3N111 , 3N112 , 3N113 , 3N114 , NJW0281G , 3N116 , 3N117 , 3N118 , 3N119 , 3N120 , 3N121 , 3N123 , 3N127 .
History: 40005
Keywords - 3N115 pdf specs
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History: 40005
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