3N115
Datasheet, Equivalent, Cross Reference Search
Type Designator: 3N115
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Collector Current |Ic max|: 0.02
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 12
MHz
Collector Capacitance (Cc): 10
pF
Noise Figure, dB: -
Package:
TO72
3N115
Transistor Equivalent Substitute - Cross-Reference Search
3N115
Datasheet (PDF)
0.1. Size:132K chenmko
3n1151gp.pdf
CHENMKO ENTERPRISE CO.,LTD3N1151GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 60 Volts CURRENT 5 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* Low collector-emitter saturation voltage * Large collector current .114(2.90).307(7.80)* High power dissipation .059(1.50).098(2.50).291(7.40).043(1.10).161(4.10
0.2. Size:769K way-on
wm03n115a.pdf
WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR
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