411 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 411
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO3
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411 datasheet
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New Product SiA411DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS 0.041 at VGS = - 2.5 V - 12a COMPLIANT SC-70 Package - 20 15 nC 0.056 at VGS = - 1.8 V - Small Footprint Area - 12a - Low On-
si4116dy.pdf
New Product Si4116DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested 0.0095 at VGS = 4.5 V 25 17 17.5 nC 0.0115 at VGS = 2.5 V 15.5 APPLICATIONS Synchronous Buck - Low S
si5411edu.pdf
Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package 0.0082 at VGS = - 4.5 V - 25a - Small Footprint Area 0.0094 at VGS = - 3.7 V - 25a - Low On-Resistance - 12 43 nC 0.0117 at VGS = - 2.5 V - 25a 100 % Rg and UI
sib411dk.pdf
SiB411DK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.066 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS 0.094 at VGS = - 2.5 V - 20 - 9a 6 nC COMPLIANT SC-75 Package 0.130 at VGS = - 1.8 V - Small Footprint Area - 9a - Low On-Resistance APPLI
2n2411 2n2412.pdf
DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS SYMBOL UNITS Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA
auirfs4115-7p.pdf
AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175 C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip
irfi4110gpbf.pdf
IRFI4110GPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 4.5m ID 72A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac
auirfs4115 auirfsl4115.pdf
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175 C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
auirfp4110.pdf
AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V D Ultra Low On-Resistance RDS(on) typ. 3.7m Enhanced dV/dT and dI/dT capability 4.5m max 175 C Operating Temperature G ID (Silicon Limited) 180A Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID (Package Lim
2sc2411-r.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
2sc4116-y.pdf
2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
2sc2411-p.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
2sc4116-bl.pdf
2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
2sc2411-q.pdf
MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.
2sc4116-o.pdf
2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
2sc4115s-q.pdf
MCC 2SC4115S-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4115S-R Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4115S-S Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating NPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Plastic-Encapsulate RoHS Compliant. See orderin
2sc4116-gr.pdf
2SC4116-O MCC 2SC4116-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SC4116-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC4116-BL Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur
fdd9411l-f085.pdf
FDD9411L-F085 N-Channel Logic Level PowerTrench MOSFET 40 V, 25 A, 7.0 m Features Typical RDS(on) = 5.6 m at VGS = 10V, ID = 20 A D Typical Qg(tot) = 18 nC at VGS = 10V, ID = 20 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electr
ntljs4114n.pdf
NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V
nths4111pt1g.pdf
NTHS4111P Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (
ntb6411n ntp6411n.pdf
NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 14 mW @ 10 V 77 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G
ntgs4111p nvgs4111p.pdf
NTGS4111P, NVGS4111P MOSFET Power, Single, P-Channel, TSOP-6 -30 V, -4.7 A Features http //onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications V(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space 38 mW @ -10 V Improved Efficiency for Battery Applications -30 V -4.7 A 68 mW @ -4.5 V
fdd9411-f085.pdf
FDD9411-F085 N-Channel PowerTrench MOSFET 40 V, 25 A, 7.8 m Features D Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS Capability D RoHS Compliant G G Qualified to AEC Q101 S Applications D-PAK TO-252 Automotive Engine Control S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steerin
ntb6411ang nvb6411an.pdf
NTB6411AN, NTP6411AN, NVB6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 14 mW @ 10 V 77 A Qualified and PPAP Capable The
ntljd4116n-d.pdf
NTLJD4116N Power MOSFET 30 V, 4.6 A, mCoolt Dual N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package 70 mW @ 4.5 V 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logi
ntgs4111p.pdf
NTGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features Leading -30 V Trench Process for Low RDS(on) http //onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications 38 mW @ -10 V Pb-Free Package is Available -30 V -4.7 A
ntljs4114nt1g.pdf
NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V
nvgs4111p.pdf
NTGS4111P, NVGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications http //onsemi.com Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications NV Prefix for Automotive and Other Applications
ntp6411ang.pdf
NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 14 mW @ 10 V 77 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G
ntmfs4119n.pdf
NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Fast Switching Times Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 2.3 mW @ 10 V Applications 30 V 30 A 3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC D MAXIMUM RATINGS (TJ = 25 C
ntmfs4119nt1g.pdf
NTMFS4119N Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead Features Low RDS(on) http //onsemi.com Fast Switching Times Low Inductance SO-8 Package ID Max V(BR)DSS RDS(on) Typ (Note 1) These are Pb-Free Devices 2.3 mW @ 10 V Applications 30 V 30 A 3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC D MAXIMUM RATINGS (TJ = 25 C
ntgs4111pt1.pdf
NTGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features Leading -30 V Trench Process for Low RDS(on) http //onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications 38 mW @ -10 V Pb-Free Package is Available -30 V -4.7 A
dra4114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
un4110q un4110r un4110s un4111 un4112 un4113 un4114 un4115q un4115r un4115s un4116q un4116r un4116s un4117q un4117r un4117s.pdf
Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit mm For digital circuits 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking Resistance by Part N
dra4113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4113Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4113Z DRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
mtm68411.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). MTM68411 Silicon P-channel MOS FET For load switch circuits For switching circuits Package Overview Code MTM68411 is the low ON resistance dual P-channel MOS FET designed for WMini8-F1 load switch circuits. Package dimension clicks here. Click! Features Pin Name Dual P-channel MOS FET in o
drc4114w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC4114W Silicon NPN epitaxial planar type For digital circuits DRC2114W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free package Package dimension
dra4114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114T DRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
drc4114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC4114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114Y DRC2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
drc4113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC4113Z Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4113Z DRC2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
drc4114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRC4114T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114T DRC2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
2sc4111.pdf
Power Transistors 2SC4111 Silicon NPN triple diffusion planar type For horizontal deflection output Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25 C) 2.7 0.3 3.0 0
ut4411.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char
stc411.pdf
STC411 NPN Silicon Transistor Description PIN Connection General purpose amplifier C High voltage application B Features Low saturation switching application E Voltage regulator application Low saturation VCE(SAT)=0.4V Max. TO-92 High Voltage VCEO=60V Min. Ordering Information Type NO. Marking Package Code STC411 STC411 TO-92 Abso
jansr2n7411.pdf
JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si
mg9411-r.pdf
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R TO-3P Plastic Package Complimentary NPN MG6331 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) MG9411 MG9411-R VCBO Col
2n4114.pdf
2N4114 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n4113.pdf
2N4113 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n2411x.pdf
2N2411X Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
ssp7411p.pdf
SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-
2sc2411.pdf
2SC2411 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max Collector 3 A 2.800 3.040 FEATURES 1 B 1.200 1.400 Base 2 C 0.890 1.110 n Emitter Power Dissipation o D 0.370 0.500 PCM 200 mW ( Tamb= 25 C) G 1.780 2.040 A n RoHS Compliant Product H 0.013 0.100 L J J 0.085 0.
2sc4115.pdf
2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 2 3 B C A E CLASSIFICATION OF hFE(1) E C Product-Rank 2SC4115-Q 2SC4115-R 2SC411
2sc4116.pdf
2SC4116 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High voltage and high current. A Excellent hFE linearity. L 3 High hFE. 3 Top View C B Low noise. 1 1 2 Complementary to 2SA1586 2 K E D CLASSIFICATION OF hFE H J F G P
tsc2411cx.pdf
TSC2411 General Purpose NPN Transistor SOT-23 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 40V 2. Emitter 3. Collector BVCBO 75V IC 600mA VCE(SAT) 0.5V @ IC / IB = 380mA / 10mA Features Ordering Information Driver Stage of AF Amplifier Part No. Package Packing General Purpose Switching Application TSC2411CX RF SOT-23 3Kpcs / 7 Reel Structure Ep
csd16411q3.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD16411Q3 SLPS206B AUGUST 2009 REVISED NOVEMBER 2016 CSD16411Q3 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low-Thermal Resistance VDS Drain-to-Source Voltage 25 V Avalanche Rated Qg Gate Charge Total (4
tgf4118-epu.pdf
TGF4118-EPU 18 mm Discrete HFET 4118 February 23,2001 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4118-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and TA = 25 C 50 55 Pout 48 PAE 50 46
2n4117 2n4118 2n4119 pn4117 pn4118 pn4119 sst4117 sst4118 sst4119.pdf
N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 2N4119 / 2N4117A 2N4119A PN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119 FEATURES PIN CONFIGURATION Low Leakage Low Capacitance ABSOLUTE MAXIMUM RATINGS TO-92 (T = 25oC unless otherwise noted) A TO-72 Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Curre
csc4115.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115 (9AW) TO-92 BCE MARKING CSC 4115 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 40 V Collector Emitter Voltage BVCEO 20 V Emitter Base Voltage BVEBO 6.0 V Collect
2sc2411.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCE
2sc4115.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 Excellent current gain characteristics. 2 2. COLLECTOR Complements to 2SA1585 3 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter
2sc4115s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC4115S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low VCE(sat). 3. BASE Excellent Current Gain Characteristics. 1 2 3 Complements The 2SA1585S. Equivalent Circuit C4115S=Device code C4115 Solid dot = Green molding compound device, - if none, the norma
2sc4116.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR (NPN) FEATURES High voltage and high current 1. BASE Excellent hFE linearity 2. EMITTER High hFE 3. COLLECTOR Low noise Complementary to 2SA1586 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V
krc410-krc411-krc414.pdf
SEMICONDUCTOR KRC410, 411, 414 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05
ktx411t.pdf
KTX411T SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES DIM MILLIMETERS _ A 2.9 + 0.2 15 Including two(TR, Diode) devices in TSV. B 1.6+0.2/-0.1 _ C 0.70 + 0.05 (Thin Super Mini type with 5 pin) 2 _ D 0.4 + 0.1 Simplify circuit design. E 2.8+0
ktd1411.pdf
SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B D C FEATURES E High DC Current Gain hFE=3000(Min.) F (VCE=2V, IC=1A) G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 80 V _ + F 11.0 0.3 G 2.9
2sc2411.pdf
2SC2411 SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current
2sc4115.pdf
2SC4115 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 20 V Collector-Emitter Voltage VEBO 6 V
2sc4116.pdf
2SC4116 TRANSISTOR (NPN) SOT-323 FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise 1. BASE Complementary to 2SA1586 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Coll
gm6411.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM6411 SCHOTTKY DIODE SCHOTTKY DIODE SCHOTTKY DIODE FEATURES Characteristic Symbol Max Unit Power dissipation PD(Ta=25 ) 225 mW Fo
2sc2411 sot-23.pdf
2SC2411 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 32
2sc4115.pdf
2SC4115 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Excellent current gain characteristics. 1.5 3.0 Complements to 2SA1585 Dimensions in inches and (millimeter
2sc4116 sot-323.pdf
2SC4116 SOT-323 Transistor(NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50
2sc2411k.pdf
2SC2411K NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t
2sc4116.pdf
2SC4116 General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 SOT-323(SC-70) FEATURES EMITTER * High voltage and high current * Excellent hFE linearity * High hFE * Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage
2sc2411kxlt1.pdf
FM120-M WILLAS 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN silicon
ao4411.pdf
AO4411 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)
ao7411.pdf
AO7411 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)
aon2411.pdf
AON2411 12V P-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology -12V Very Low RDS(ON) at 1.8V VGS ID (at VGS=-4.5V) -20A Low Gate Charge RDS(ON) (at VGS=-4.5V)
aob411l.pdf
AOB411L 60V P-Channel MOSFET General Description Product Summary VDS The AOB411L combines advanced trench MOSFET -60V -78A technology with a low resistance package to provide ID (at VGS=-10V) extremely low RDS(ON).This device is ideal for boost
aon6411.pdf
AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aod4112.pdf
AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky VDS (V) = 30V diode to provide excellent R ,and low gate charge. ID = 20A (VGS = 10V) DS(ON) This device is suitable for use as a low side FET in RDS(ON)
aoc2411.pdf
AOC2411 30V P-Channel MOSFET General Description Product Summary Vds -30V ID (at VGS=-4.5V) -3.4A The AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
ao6411.pdf
AO6411 20V P-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)
ap4411gm.pdf
AP4411GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 25m D Fast Switching ID -8.2A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of
ap4411gm-hf.pdf
AP4411GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Fast Switching Characteristic RDS(ON) 25m D RoHS Compliant & Halogen-Free ID -8.2A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged
am7411p.pdf
Analog Power AM7411P P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 229 @ VGS = -10V -3.8 Low thermal impedance -100 248 @ VGS = -4.5V -3.7 Fast switching speed Typical Applications DFN5x6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
am6411p.pdf
Analog Power AM6411P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m( )ID (A) These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5 rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9 dissipation. Typical applications are DC-DC converters and power management in portable and 35
am3411pe.pdf
Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portab
afp3411.pdf
AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn8411.pdf
AFN8411 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8411, N-Channel enhancement mode 100V/5.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.6A,RDS(ON)=125m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
3dd4110pl.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD4110PL( ) MAIN CHARACTERISTICS Package I 0.5A C V 400V CEO P (TO-92-F1) 1W C ORDER MESSAGE Order codes - - - - Marking Package Halogen-Reel Halogen-Free-Reel
mtp4411q8.pdf
Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2011.12.07 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4411Q8 ID -5.3A RDSON@VGS=-10V, ID=-5.3A 35m (typ) RDSON@VGS=-4.5V,ID=-4.2A 56m (typ) Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast
btb4110d3.pdf
Spec. No. C815D3 Issued Date 2011.03.25 CYStech Electronics Corp. Revised Date Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -20V IC -5A BTB4110D3 RCESAT 75m (typ.) Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -4A / -100mA Excellent DC current gain characteristics Pb-free package Symbol Outline BTB4110D3 TO-126ML
hbn2411s6r.pdf
Spec. No. C203S6R Issued Date 2003.09.12 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/ 8 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2411S6R Features Two BTC2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.
btc2411n3.pdf
Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2013.09.25 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
mtp4411aq8.pdf
Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2016.03.30 Page No. 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP4411AQ8 ID@VGS=-10V, TA=25 C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m (typ) RDSON@VGS=-4.5V,ID=-4.2A 43m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead
btc2411l3.pdf
Spec. No. C203L3 Issued Date 2005.02.22 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411L3 Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
btc2411s3.pdf
Spec. No. C203S3-R Issued Date 2003.11.18 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411S3 Description The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat
btc2411n3g.pdf
Spec. No. C203N3G Issued Date 2008.12.26 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3G Description The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA.
mtp4411m3.pdf
Spec. No. C400M3 CYStech Electronics Corp. Issued Date 2011.10.06 Revised Date 2013.08.07 Page No. 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP4411M3 ID -5A 40m (typ.) RDSON@VGS=-10V, ID=-4A 58m (typ.) RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline
apm4115pu.pdf
APM4115PU P-Channel Enhancement Mode MOSFET Features Pin Description -40V/-45A, RDS(ON)= 12.5m (typ.) @ VGS=-10V D G RDS(ON)= 18.5m (typ.) @ VGS=-4.5V Super High Dense Cell Design S Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHS S Compliant) Applications G Power Management in LCD TV Inverter D P-Channel MOSFET Orderin
stu411d.pdf
Green Product STU411D a S mHop Microelectronics C orp. Ver 1.1 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 32 @ VGS=10V 48 @ VGS=-10V 40V 15A -40V -12A 42 @ VGS=4.5V 68 @ VGS=-4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 G2 S 1 N-ch S 2 P-ch TO-252-4L (
sts3411a.pdf
Green Product STS3411A a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 52 @ VGS=-10V Suface Mount Package. -30V -3.6A 65 @ VGS=-4.5V ESD Protected. D SOT-23 G D S G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless
brcs3411mf.pdf
BRCS3411MF Rev.B Oct.-2020 DATA SHEET / Descriptions SOT23-6 P MOS P-channel MOSFET in a SOT23-6 Plastic Package / Features V (V)=-30V DS I =-4.2A(V =-10V) D GS RDS(ON)
lp4411et1g.pdf
LESHAN RADIO COMPANY, LTD. LP4411ET1G P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON)
l2sc2411kqlt1g.pdf
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SC2411KQLT1G NPN silicon Series FEATURE S-L2SC2411KQLT1G Epitaxial planar type Series Complementary to L2SA1036K We declare that the material of product are Halogen Free and 3 compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101
l2sc2411krlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2411KRLT1G FEATURES S-L2SC2411KRLT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT 23 DEVICE MARK
l2sc2411krlt1g l2sc2411krlt3g.pdf
L2SC2411KRLT1G S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mark
2sc4110b.pdf
RoHS 2SC4110B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor 25A/400V Switching Regulator Applications 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High breakdown voltage and high reliability 5.45 0.1 5.45 0.1 1.4 Wide SOA (Safe Operation Area)
csb4110.pdf
CSB4110 N PD TC=25 370 W ID VGS=10V,TC=25 180 A ID VGS=10V,TC=100 130 A IDM 670 A VGS 20 V Tjm +175 Tstg -55 +175 RthJC 0.042 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=75A 0.01 VGS th VDS=VGS,I
ftc2411k.pdf
SEMICONDUCTOR FTC2411K TECHNICAL DATA Medium Power Transistor NPN silicon FEATURE Epitaxial planar type 3 Complementary to FTA1036K 1 2 DEVICE MARKING AND ORDERING INFORMATION SOT 23 (TO 236AB) Device Marking Shipping FTC2411K-Q CQ 3000/Tape&Reel FTC2411K-R CR 3000/Tape&Reel 3 COLLECTOR 1 MAXIMUM RATINGS (TA = 25 C) BASE Parameter Symbol Limits Unit 2 Collector-base
dta401-dta411 dta417 dta422-dta423.pdf
DTA401 411 / DTA417 SEMICONDUCTOR TECHNICAL DATA DTA422 423 Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 2 consisti
2sc4118.pdf
SMD Type Transistors NPN Transistors 2SC4118 Features Excellent hFE linearity hFE(2)=25(min) Complementary to 2SA1588 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Ba
ao4411.pdf
SMD Type MOSFET P-Channel MOSFET AO4411 (KO4411) SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-10V) RDS(ON) 32m (VGS =-10V) 1.50 0.15 RDS(ON) 55m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-
2sc4117.pdf
SMD Type Transistors NPN Transistors 2SC4117 Features High voltage VCEO = 120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA1587 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120
2sc2411.pdf
SMD Type Transistors NPN Transistors 2SC2411 (2SC2411K) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A 1 2 Low VCE(sat).Optimal for low voltage operation. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complements the 2SA1036/2SA1036K 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter
2sc4115.pdf
SMD Type Transistors NPN Transistors 2SC4115 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA1585 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base
2sa1411.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1411 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Very high DC current gain hFE=500 to 1600. High VEBO Voltage VEBO=-10V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitte
2sc4116.pdf
SMD Type Transistors NPN Transistors 2SC4116 Features High voltage and high current High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA1586 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50
2sc2411k.pdf
2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES 0.120(3.04) NPN epitaxial silicon,planar design 0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DAT
pja3411.pdf
PPJA3411 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A
2sc2411kgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST
csd16411q3.pdf
N-Channel CICLON NexFET Power MOSFETs CSD16411Q3 Product Summary Features Ultra Low Qg & Qgd VDS 25 V S 1 8 D S 1 8 D Qg 2.9 nC Low Thermal Resistance G D S 2 7 D S 2 7 D Qgd 0.7 nC S D Avalanche Rated D S S 3 6 D VGS=4.5V 12 m S 3 6 D D RDS(on) S D D G 4 5 D G 4 5 D VGS=10V 8 m Pb Free Terminal Plating Vth 2.0 V RoHS Compli
elm14411aa.pdf
Single P-channel MOSFET ELM14411AA-N General description Features ELM14411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V) resistance. Rds(on)
elm34411aa.pdf
Single P-channel MOSFET ELM34411AA-N General description Features ELM34411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
elm33411ca.pdf
Single P-channel MOSFET ELM33411CA-S General description Features ELM33411CA-S uses advanced trench technology to Vds=-20V provide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)
gsm8411.pdf
GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m @VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m @VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly
gsm3411.pdf
GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
3dg4115s.pdf
2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )
2sc4115s-r.pdf
2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )
3dg2411k.pdf
2SC2411K(3DG2411K) NPN /SILICON NPN TRANSISTOR /Purpose Medium power amplifier applications. , , 2SA1036K(3CG1036K) Features Large I , low V ,complementary pair with the 2SA1036K(3CG1036K). C CE(sat) /Absolute maximum ratings(Ta=25 )
2sc4115s-s.pdf
2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier. 2SA1585S(3CG1585S) Features Low V ,excellent current gain characteristics complementary pair with CE(sat) 2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25 )
me4411 me4411-g.pdf
ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON) 10m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 13m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD
mmp4411.pdf
MMP4411 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 32m RDS(ON), Vgs@-4.5V, Ids@-5A = 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25
mmp4411dy.pdf
MMP4411DY Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-13.0A = 10m RDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristic
stn4110.pdf
STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS =
2sc4115c.pdf
SUNROC 2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD 0.3 W (Tamb=25 ) 2. COLLECTOR Collector current I CM 3 A 3. BASE Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range 123 TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy
tfn2411.pdf
Tin Far Electronic CO.,LTD Page No 2/6 Characteristics (Ta=25 C) Symbol Min. Typ. Max. Unit Test Conditions BV 75 - - V I =10 A CBO C BV 40 - - V I =10mA CEO C BV 6 - - V I =10 A EBO E I - - 10 nA V =60V CBO CB I - - 10 nA V =60V, V =-3V CEX CE BE I - - 10 nA V =3V EBO EB *V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B *V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B *
tfh2411.pdf
Tin Far Electronic CO.,LTD Page No 1/5 TFH2411 Features Two TFS2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High IC(Max) . IC (Max) = 0.6A Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA O
qm2411j.pdf
QM2411J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req
qm2411k.pdf
QM2411K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3A for most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir
qm2411g.pdf
QM2411G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req
qm2411sn8.pdf
QM2411SN8 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2A charge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc
qm2411v.pdf
QM2411V P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2A for most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ
hsm4113.pdf
HSM4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4113 is the high cell density trenched P- VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 40 m converter applications. ID -7.5 A The HSM4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsbb4115.pdf
HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
hsu4115.pdf
HSU4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4115 is the high cell density trenched P- VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -52 A The HSU4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
hsu4113.pdf
HSU4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4113 is the high cell density trenched P- VDS -40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID -23 A The HSU4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
hsm4115.pdf
HSM4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4115 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 13 m gate charge for most of the synchronous buck converter applications. ID -8.7 A The HSM4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
irfb4110.pdf
IRFB4110 100 V N-Channel MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA D l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l
irfp4110.pdf
IRFP4110 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics Drain-Sourtce Breakdown Voltage VGS=0V,ID=250 A 100 --- --- V BVDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 A IDSS Gate-Source Leakage Current IGSS VGS= 20V, VDS=0A --- --- 100 nA On Chara
sm4411.pdf
SM4411 P-Channel Enhancement Mode Field Effect Transistor Description The SM4411 uses advanced trench technology to S D provide excellent RDS(ON), and ultra-low low gate S D charge. This device is suitable for use as a load S D G D switch or in PWM applications. Top View SOIC-8 General Features D VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON)
2sc4110t4tl.pdf
2SC4110T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Volta
ao4411.pdf
AO4411 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi
irfr3411pbf.pdf
IRFR3411PBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un
irfr3411tr.pdf
IRFR3411TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl
ntgs4111pt.pdf
NTGS4111PT www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-
aod4112.pdf
AOD4112 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU
hm4110t.pdf
HM4110T N-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)
hms4110t.pdf
HMS4110T N-Channel Super Trench Power MOSFET Description The HMS4110T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat
hm4110.pdf
100VDS 25VGS 170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0V VGSS= 25V ID=1 0A RDS(ON)=5 m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage
irfb4110.pdf
100V N-Channel Power MOSFET DESCRIPTION The IRFB4110 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 180A R
2sc4110l 2sc4110m 2sc4110n.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4110 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V
irfb4115g.pdf
isc N-Channel MOSFET Transistor IRFB4115G IIRFB4115G FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMU
2n4112.pdf
isc Silicon NPN Power Transistor 2N4112 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sk4115.pdf
iscN-Channel MOSFET Transistor 2SK4115 FEATURES Low drain-source on-resistance RDS(ON) = 2.0 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
irfi4110g.pdf
isc N-Channel MOSFET Transistor IRFI4110G,IIRFI4110G FEATURES Low drain-source on-resistance RDS(on) 4.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High speed power switching Hard switch and high frequency circuits ABSOLUTE MAXIMUM RATINGS(
irfsl4115.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4115 FEATURES With TO-262 packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
irfb4110.pdf
isc N-Channel MOSFET Transistor IRFB4110 IIRFB4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sk4118ls.pdf
isc N-Channel MOSFET Transistor 2SK4118LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
2n4114.pdf
isc Silicon NPN Power Transistor 2N4114 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sc5411.pdf
isc Silicon NPN Power Transistor 2SC5411 DESCRIPTION With TO-3PFa packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CB
irfu3411.pdf
isc N-Channel MOSFET Transistor IRFU3411 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfp4110.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4110 IIRFP4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr
2sk4119ls.pdf
isc N-Channel MOSFET Transistor 2SK4119LS FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
2n4113.pdf
isc Silicon NPN Power Transistor 2N4113 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sd1411.pdf
isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1018 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.
mj411.pdf
isc Silicon NPN Power Transistor MJ411 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 300V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V )= 0.8 V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circ
2sk1411.pdf
isc N-Channel MOSFET Transistor 2SK1411 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen
2sk4116ls.pdf
isc N-Channel MOSFET Transistor 2SK4116LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.54 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
2sc4110-f2.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE
2n4111.pdf
isc Silicon NPN Power Transistor 2N4111 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sk4117ls.pdf
isc N-Channel MOSFET Transistor 2SK4117LS FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
2sc4116.pdf
isc Silicon NPN Power Transistor 2SC4116 DESCRIPTION With SOT-323 packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO
aob411l.pdf
isc P-Channel MOSFET Transistor AOB411L FEATURES Drain Current I = -78A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R = 16.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge
2sb1411.pdf
isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -1A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS H
irfr3411.pdf
isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411 FEATURES Static drain-source on-resistance RDS(on) 44m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate
2sc4111.pdf
isc Silicon NPN Power Transistor 2SC4111 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
irfb4110g.pdf
isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110G FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc4110.pdf
isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
irfb4115.pdf
isc N-Channel MOSFET Transistor IRFB4115 IIRFB4115 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM
irfs4115pbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS4115PbF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
Otros transistores... 41025, 41026, 41027, 41028, 41038, 41039, 41042, 41044, 2SC2625, 413, 41500, 41501, 41502, 41503, 41504, 41505, 41506
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