411 Datasheet and Replacement

HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

HSBA4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4115 is the high cell density trenched V -40 V DSP-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 10.5 m DS(ON),typconverter applications. I -52 A DThe HSBA4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure

PD -97147IRFS4115-7PPbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.10.0m:l High Speed Power Switchingl Hard Switched and High Frequency CircuitsGmax. 11.8m:ID 105ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

PD - 96216IRFB4115GPbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness Dl Fully Characterize

IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic

PD - 95371BIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl

AUIRFS4115AUTOMOTIVE GRADEAUIRFSL4115HEXFET Power MOSFETFeaturesDVDSS150Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.10.3ml 175C Operating Temperaturel Fast SwitchingG max. 12.1ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantID99A l Automotive Qualified * SDDescriptionDSpecifically designed for A

PD - 96347IRFI4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max.4.5mID (Silicon Limited)72ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl Fully Characterized

PD - 94393IRFR3411IRFU3411 Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 100V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques toachieve extremely low on-

PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl

IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness

PD - 96138IRFB4110QPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuitsl Lead-Free max4.5mID180ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggednessDl Fully Characterized Capacitance an

SD1411RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.40 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 200 W MIN. WITH 16 dB GAIN=OUT.400 x .425 6LFL (M153)epoxy sealedORDER CODE BRANDINGSD1411 SD1411PIN CONNECTIONDESCRIPTIONThe SD1411 is a silicon NPN transistor designedfor telecommunications in HF and VHF frequencybands. This device utilizes g

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

TTC4116FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) TTC4116FU Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Small package

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS) 2SK4115 Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V

RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2410, RN2411 Equivalent Circuit Maximum Ratings (Ta = 25C) JED

2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollec

MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV in One) MP4411 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package

2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2410,RN2411 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1410, RN1411 Equivalent Circuit Maximum Ratings (Ta = 25C)

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4110 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4112 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complemen

SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.5-V drive 2.10.1 Low ON-resistanceRDS(ON) = 23.8 m (max) (@VGS = 2.5 V) 1.70.1 RDS(ON) = 14.3 m (max) (@VGS = 3.5 V) RDS(ON) = 12 m (max) (@VGS = 4.5 V) 1 62 5Absolute Maximum

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4114 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1586

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h : h = 70 to 700 FE FE Low noise: NF = 1dB

Ordering number : ENN7383CPH6411N-Channl Silicon MOSFETCPH6411Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6411]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum

EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit

Ordering number : ENA0829 2SK4118LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4118LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENN71752SK3411N-Channel Silicon MOSFET2SK3411DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SK3411]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3411]6.5 2.35.0 0.5

Ordering number : ENA0830 2SK4119LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4119LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENA0790A 2SK4116LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4116LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENA0791A 2SK4117LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4117LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

Ordering number : ENA0073 ECH8411N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8411ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID 9 ADrain Current (Pulse) IDP

Ordering number:EN2548BNPN Triple Diffused Planar Silicon Darlington Transistor2SC4119800V/15A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage , high-power switching.2048A[2SC4119]Features High speed (adoption of MBIT process). High breakdown voltage (VCBO=1500V). On-chip damper diode. High reliability.E :

Ordering number:EN2475BNPN Triple Diffused Planar Silicon Transistor2SC4110400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4110] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E

PN4117 MMBF4117PN4118 MMBF4118PN4119 MMBF4119GSG TO-92SSOT-23 DDMark: 61A / 61C / 61ENOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low current DC and audio applications.These devices provide excellent performance as input stages forsub-picoamp instrumentation or any high impedance signalsources. Sourced from Process 53.Abso

PN4117AN-Channel Switch This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from process 53.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Dra

FJV4112RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=47K) Complement to FJV3112R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR82 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

FJV4111RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=22K) Complement to FJV3111R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR81 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

FJV4113RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJV3113R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR83R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

April 2015FDD9411_F085N-Channel PowerTrench MOSFET40 V, 15 A, 7.8 m Features Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A D Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Elec

FJV4110RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=10K) Complement to FJV3110R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR80 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

FJV4114RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJV3114R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR84R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2411, 2SK2411-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2411 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high speed switching applications.4.8 MAX.10.6 MAX.3.6 0.21.3 0.2FEATURES10.0 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ411P-CHANNEL SIGNAL MOS FETFOR SWITCHINGThe 2SJ411 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)7.0 MAX. 1.2a switching element that can be directly driven by the output of anIC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for power control switche

PBSS4112PAN120 V, 1 A NPN/NPN low VCEsat (BISS) transistor29 November 2012 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.1.2 Features and benefit

PBSS4112PANP120 V, 1 A NPN/PNP low VCEsat (BISS) transistor29 November 2012 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.1.2 Features and benefit

2SC2411KDatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value SMT3VCEO32VIC500mA2SC2411KSOT-346 lFeaturesl1) High ICMAX lInner circuitl ICMAX=0.5A2)Low VCE(sat) Optimal for low voltage operation.3)Complements the 2SA1036K.lApplicationlDRIVING CIRCUIT, LOW FREQ

Low Frequency Transistor (20V, 3A) 2SC4115S Features Dimensions(Unit:mm) 1) Low VCE(sat). 2SC4115SVCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 40.2 20.22) Excellent current gain characteristics. 3) Complements the 2SA1585S. Structure 0.45+0.15-0.05Epitaxial planar type NPN silicon transistor 0.45+0.152.5+0.4 0.5 -0.05-0.15 Absolute maximum ratings (Ta

2SC2411KFRA2SC2411K TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units : mm) 1) High ICMax.2SC2411KFRA2SC2411KICMax. = 0.5A2) Low VCE(sat).2.90.2Optimal for low voltage operation. 1.1+0.21.90.2 -0.10.80.10.95 0.952SA1036KFRA3) Complements the 2SA1036K. (1) (2)0 0.1(3)

2N/PN/SST4117A SeriesVishay SiliconixN-Channel JFETs2N4117A PN4117A SST41172N4118A PN4118A SST41182N4119A PN4119A SST4119PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)4117 -0.6 to -1.8 -40 70 304118 -1 to -3 -40 80 804119 -2 to -6 -40 100 200FEATURES BENEFITS APPLICATIONSD Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Vo

New ProductSi4110DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.013 at VGS = 10 V 80 17.3 35 nCCOMPLIANT 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Primary Side Switch Half BridgeSO-8 Intermediate Bus ConverterD S1

Si4411DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.010 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 300.0155 at VGS = - 4.5 V - 10 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS NotebookSO-8 - Load Switch- Battery SwitchSS1 8 D S D

Si7411DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.019 at VGS = - 4.5 V - 11.4 TrenchFET Power MOSFET: 1.8 V Rated0.025 at VGS = - 2.5 V - 20 - 9.9 New PowerPAK Package0.034 at VGS = - 1.8 V - 8.5- Low Thermal Resistance, RthJC- Low 1.07 mm Pro

New ProductSi4114DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET20e20 27.5 nC 100 % Rg and UIS Tested0.007 at VGS = 4.5 V 20e Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Low-Si

Si1411DHVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition2.6 at VGS = - 10 V - 0.52 TrenchFET Power MOSFETS- 150 4.2 nC2.7 at VGS = - 6 V - 0.51 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 200

New ProductSiA411DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.041 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- 20 15 nC0.056 at VGS = - 1.8 V - Small Footprint Area- 12a- Low On-

New ProductSi4116DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0095 at VGS = 4.5 V 25 17 17.5 nC0.0115 at VGS = 2.5 V 15.5APPLICATIONS Synchronous Buck- Low S

Si5411EDUwww.vishay.comVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package0.0082 at VGS = - 4.5 V - 25a- Small Footprint Area0.0094 at VGS = - 3.7 V - 25a- Low On-Resistance- 12 43 nC0.0117 at VGS = - 2.5 V - 25a 100 % Rg and UI

SiB411DKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.066 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.094 at VGS = - 2.5 V - 20- 9a 6 nC COMPLIANTSC-75 Package0.130 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-ResistanceAPPLI

DATA SHEET2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL UNITS Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA

AUIRFS4115-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 150V Ultra Low On-Resistance RDS(on) typ. 10m Dynamic dV/dT Rating max. 11.8m 175C Operating Temperature ID 105A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Descrip

IRFI4110GPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 4.5mID 72A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

MCC2SC4115S-QMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4115S-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4115S-SFax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Plastic-EncapsulateRoHS Compliant. See orderin

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

FDD9411L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 25 A, 7.0 mFeatures Typical RDS(on) = 5.6 m at VGS = 10V, ID = 20 AD Typical Qg(tot) = 18 nC at VGS = 10V, ID = 20 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electr

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

NTHS4111PPower MOSFET-30 V, -6.1 A, Single P-Channel, ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG

NTGS4111P, NVGS4111PMOSFET Power, Single,P-Channel, TSOP-6-30 V, -4.7 AFeatureshttp://onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable ApplicationsV(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space38 mW @ -10 V Improved Efficiency for Battery Applications-30 V -4.7 A68 mW @ -4.5 V

FDD9411-F085N-Channel PowerTrench MOSFET40 V, 25 A, 7.8 mFeaturesD Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS CapabilityD RoHS CompliantGG Qualified to AEC Q101SApplicationsD-PAKTO-252 Automotive Engine Control S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steerin

NTB6411AN, NTP6411AN,NVB6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 14 mW @ 10 V 77 AQualified and PPAP Capable The

NTLJD4116NPower MOSFET30 V, 4.6 A, mCoolt Dual N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package70 mW @ 4.5 V 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logi

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

NTGS4111P, NVGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications http://onsemi.com Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications NV Prefix for Automotive and Other Applications

NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG

NTMFS4119NPower MOSFET30 V, 30 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Fast Switching Times Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices2.3 mW @ 10 VApplications30 V 30 A3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC DMAXIMUM RATINGS (TJ = 25C

NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD

NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD

NTMFS4119NPower MOSFET30 V, 30 A, Single N-Channel,SO-8 Flat LeadFeatures Low RDS(on)http://onsemi.com Fast Switching Times Low Inductance SO-8 PackageID MaxV(BR)DSS RDS(on) Typ(Note 1) These are Pb-Free Devices2.3 mW @ 10 VApplications30 V 30 A3.1 mW @ 4.5 V Notebooks, Graphics Cards Low Side Switch DC-DC DMAXIMUM RATINGS (TJ = 25C

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114EDRA2114E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

Transistors with built-in ResistorUN4111/4112/4113/4114/4115/4116/4117/4118/4119/4110/411D/411E/411F/411H/411LSilicon PNP epitaxial planer transistorUnit: mmFor digital circuits4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.markingResistance by Part N

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4113ZDRA2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

This product complies with the RoHS Directive (EU 2002/95/EC).MTM68411Silicon P-channel MOS FETFor load switch circuitsFor switching circuits Package Overview CodeMTM68411 is the low ON resistance dual P-channel MOS FET designed for WMini8-F1load switch circuits.Package dimension clicks here. Click! Features Pin Name Dual P-channel MOS FET in o

This product complies with the RoHS Directive (EU 2002/95/EC).DRC4114WSilicon NPN epitaxial planar typeFor digital circuitsDRC2114W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free packagePackage dimension

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114TDRA2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

This product complies with the RoHS Directive (EU 2002/95/EC).DRC4114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4114YDRC2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

This product complies with the RoHS Directive (EU 2002/95/EC).DRC4113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4113ZDRC2113Z in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

This product complies with the RoHS Directive (EU 2002/95/EC).DRC4114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4114TDRC2114T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4114YDRA2114Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

Power Transistors2SC4111Silicon NPN triple diffusion planar typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7 0.33.0 0

UNISONIC TECHNOLOGIES CO., LTD UT4411 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 32m @VGS = 10 V * Low capacitance * Optimized gate char

STC411NPN Silicon TransistorDescription PIN Connection General purpose amplifier C High voltage application BFeatures Low saturation switching application E Voltage regulator application Low saturation : VCE(SAT)=0.4V Max. TO-92 High Voltage : VCEO=60V Min. Ordering Information Type NO. Marking Package Code STC411 STC411 TO-92 Abso

JANSR2N7411Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil Corporationhasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si

SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R TO-3P Plastic Package Complimentary NPN MG6331 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG9411 MG9411-R VCBO Col

2N4114Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

2N4113Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

2N2411XDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 20V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-

2SC2411NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsA suffix of "-C" specifies halogen & lead-freeSOT-23 Dim Min Max Collector3A 2.800 3.040FEATURES1 B 1.200 1.400Base 2C 0.890 1.110nEmitterPower DissipationoD 0.370 0.500 PCM: 200 mW ( Tamb= 25 C)G 1.780 2.040AnRoHS Compliant ProductH 0.013 0.100LJ J 0.085 0.

2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 123B C AE CLASSIFICATION OF hFE(1) ECProduct-Rank 2SC4115-Q 2SC4115-R 2SC411

2SC4116 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High voltage and high current. A Excellent hFE linearity. L3 High hFE. 3Top View C B Low noise. 11 2 Complementary to 2SA1586 2K EDCLASSIFICATION OF hFE H JF GP

TSC2411 General Purpose NPN Transistor SOT-23 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 40V 2. Emitter 3. Collector BVCBO 75V IC 600mA VCE(SAT) 0.5V @ IC / IB = 380mA / 10mA Features Ordering Information Driver Stage of AF Amplifier Part No. Package Packing General Purpose Switching Application TSC2411CX RF SOT-23 3Kpcs / 7 Reel Structure Ep

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD16411Q3SLPS206B AUGUST 2009 REVISED NOVEMBER 2016CSD16411Q3 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low-Thermal ResistanceVDS Drain-to-Source Voltage 25 V Avalanche RatedQg Gate Charge Total (4

TGF4118-EPU 18 mm Discrete HFET4118February 23,2001 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils(0.914 x 2.057 x 0.102 mm)TGF4118-EPU RF Performance at F = 2.3 GHzVd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and TA = 25C50 55Pout48PAE5046

N-Channel JFETGeneral Purpose AmplifierCORPORATION2N4117 2N4119 / 2N4117A 2N4119APN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119FEATURESPIN CONFIGURATION Low Leakage Low CapacitanceABSOLUTE MAXIMUM RATINGSTO-92(T = 25oC unless otherwise noted)ATO-72Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Curre

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC4115(9AW)TO-92BCEMARKING : CSC4115BCABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 40 VCollector Emitter Voltage BVCEO 20 VEmitter Base Voltage BVEBO 6.0 VCollect

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN)1. BASEFEATURES 2. EMITTER3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 Excellent current gain characteristics. 2 2. COLLECTOR Complements to 2SA1585 3 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S 2SC4115S TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR Low VCE(sat).3. BASE Excellent Current Gain Characteristics.123 Complements The 2SA1585S. Equivalent Circuit C4115S=Device code C4115Solid dot = Green molding compound device, -if none, the norma

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsSOT-323 2SC4116 TRANSISTOR (NPN)FEATURES High voltage and high current1. BASE Excellent hFE linearity2. EMITTER High hFE3. COLLECTOR Low noise Complementary to 2SA1586MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V

SEMICONDUCTOR KRC410, 411, 414EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05

KTX411TSEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215Including two(TR, Diode) devices in TSV.B 1.6+0.2/-0.1_C 0.70 + 0.05(Thin Super Mini type with 5 pin)2_D 0.4 + 0.1Simplify circuit design. E 2.8+0

SEMICONDUCTOR KTD1411TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE DARLINGTON TRANSISTOR.ABDCFEATURESEHigh DC Current Gain : hFE=3000(Min.) F(VCE=2V, IC=1A)GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 80 V_+F 11.0 0.3G 2.9

LS4117, 4118, 4119ULTRA-HIGH INPUT IMPEDANCEN-CHANNEL JFETLinear Integrated SystemsFEATURESLOW POWER IDSS

2SC2411SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current

2SC4115 TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 20 VCollector-Emitter Voltage VEBO 6 V

2SC4116 TRANSISTOR (NPN)SOT-323 FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise 1. BASE Complementary to 2SA1586 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Coll

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM6411SCHOTTKY DIODESCHOTTKY DIODESCHOTTKY DIODE FEATURES Characteristic Symbol Max Unit Power dissipation PD(Ta=25) 225 mWFo

2SC2411 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR FeaturesHigh ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 32

2SC4115 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B 4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.400.480.442x)0.13 B0.35 0.37 Excellent current gain characteristics. 1.53.0 Complements to 2SA1585 Dimensions in inches and (millimeter

2SC4116 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50

2SC2411KNPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO32 VVCBOCollector-Base Voltage 40 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

2SC4116General Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2SOT-323(SC-70)FEATURES EMITTER* High voltage and high current * Excellent hFE linearity * High hFE* Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage

FM120-M WILLAS2SC2411KxLT1THRUMedium Power TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN silicon

AO441130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4411 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

AOD4110N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesThe AOD4110 uses advanced trench technology with VDS (V) = 30Va monolithically integrated Schottky diode to provide ID =40A (VGS = 10V)excellent RDS(ON),and low gate charge. This device is RDS(ON)

AON241112V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -12V Very Low RDS(ON) at 1.8V VGS ID (at VGS=-4.5V) -20A Low Gate Charge RDS(ON) (at VGS=-4.5V)

AOB411L60V P-Channel MOSFETGeneral Description Product SummaryVDSThe AOB411L combines advanced trench MOSFET -60V-78Atechnology with a low resistance package to provide ID (at VGS=-10V)extremely low RDS(ON).This device is ideal for boost

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

AOD4112N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesSRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky VDS (V) = 30Vdiode to provide excellent R ,and low gate charge. ID = 20A (VGS = 10V)DS(ON)This device is suitable for use as a low side FET in RDS(ON)

AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

AO641120V P-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)

AP4411GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS -30V DDLow On-resistance D RDS(ON) 25m DFast Switching ID -8.2A GSSSO-8SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

AP4411GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Fast Switching Characteristic RDS(ON) 25mD RoHS Compliant & Halogen-Free ID -8.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

Analog Power AM7411PP-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)229 @ VGS = -10V -3.8 Low thermal impedance -100248 @ VGS = -4.5V -3.7 Fast switching speed Typical Applications: DFN5x6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits

Analog Power AM6411PP-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYVDS (V) rDS(on) m()ID (A)These miniature surface mount MOSFETs utilize a high cell density trench process to provide low 13 @ VGS = -4.5V -9.5rDS(on) and to ensure minimal power loss and heat -20 19 @ VGS = -2.5V -7.9dissipation. Typical applications are DC-DC converters and power management in portable and 35

Analog Power AM3411PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7applications are DC-DC converters and -200.057 @ VGS = -2.5V -4.9power management in portab

AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

AFN8411 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8411, N-Channel enhancement mode 100V/5.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.6A,RDS(ON)=125m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4110PL() MAIN CHARACTERISTICS Package I 0.5A CV 400V CEOP (TO-92-F1) 1W C ORDER MESSAGE Order codes - - - - Marking Package Halogen-Reel Halogen-Free-Reel

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp.Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4411Q8 ID -5.3ARDSON@VGS=-10V, ID=-5.3A 35m(typ)RDSON@VGS=-4.5V,ID=-4.2A 56m(typ)Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

Spec. No. : C815D3 Issued Date : 2011.03.25 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -20VIC -5ABTB4110D3 RCESAT 75m(typ.) Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -4A / -100mA Excellent DC current gain characteristics Pb-free package Symbol Outline BTB4110D3 TO-126ML

Spec. No. : C203S6R Issued Date : 2003.09.12 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/ 8 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2411S6R Features Two BTC2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.09.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411N3Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2016.03.30 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30VMTP4411AQ8 ID@VGS=-10V, TA=25C -5.3A RDSON@VGS=-10V, ID=-5.3A 30m(typ)RDSON@VGS=-4.5V,ID=-4.2A 43m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead

Spec. No. : C203L3 Issued Date : 2005.02.22 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411L3Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

Spec. No. : C203S3-R Issued Date : 2003.11.18 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411S3Description The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat

Spec. No. : C203N3G Issued Date : 2008.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3GDescription The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA.

Spec. No. : C400M3 CYStech Electronics Corp. Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30VMTP4411M3 ID -5A40m (typ.)RDSON@VGS=-10V, ID=-4A 58m (typ.)RDSON@VGS=-4.5V, ID=-3A Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating package Symbol Outline

APM4115PUP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-45A, RDS(ON)= 12.5m (typ.) @ VGS=-10VDG RDS(ON)= 18.5m (typ.) @ VGS=-4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHSSCompliant)ApplicationsG Power Management in LCD TV InverterDP-Channel MOSFETOrderin

GreenProductSTU411DaS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 15A-40V -12A42 @ VGS=4.5V 68 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(

GreenProductSTS3411AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.52 @ VGS=-10VSuface Mount Package.-30V -3.6A65 @ VGS=-4.5V ESD Protected.D SOT-23GDSGSABSOLUTE MAXIMUM RATINGS (TA=25C unless

BRCS3411MF Rev.B Oct.-2020 DATA SHEET / Descriptions SOT23-6 P MOS P-channel MOSFET in a SOT23-6 Plastic Package / Features V (V)=-30V DSI =-4.2A(V =-10V) D GSRDS(ON)

LESHAN RADIO COMPANY, LTD.LP4411ET1GP-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = -30VID = -8 A (VGS = -10V)RDS(ON)

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SC2411KQLT1GNPN silicon SeriesFEATURES-L2SC2411KQLT1G Epitaxial planar typeSeries Complementary to L2SA1036K We declare that the material of product are Halogen Free and3compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2411KRLT1GFEATURESS-L2SC2411KRLT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT 23 DEVICE MARK

L2SC2411KRLT1GS-L2SC2411KRLT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mark

RoHS 2SC4110B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor25A/400V Switching Regulator Applications15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1High-speed switchingHigh breakdown voltage and high reliability5.450.1 5.450.11.4Wide SOA (Safe Operation Area)

CSB4110 N PD TC=25 370 W ID VGS=10V,TC=25 180 A ID VGS=10V,TC=100 130 A IDM 670 A VGS 20 V Tjm +175 Tstg -55 +175 RthJC 0.042 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=75A 0.01 VGS th VDS=VGS,I

SEMICONDUCTORFTC2411KTECHNICAL DATAMedium Power TransistorNPN siliconFEATUREEpitaxial planar type3Complementary to FTA1036K12DEVICE MARKING AND ORDERING INFORMATIONSOT 23 (TO236AB)Device Marking ShippingFTC2411K-Q CQ 3000/Tape&ReelFTC2411K-R CR 3000/Tape&Reel3COLLECTOR1MAXIMUM RATINGS (TA = 25C)BASEParameter Symbol Limits Unit2Collector-base

DTA401~411 / DTA417SEMICONDUCTORTECHNICAL DATA DTA422~423Bias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti

SMD Type TransistorsNPN Transistors2SC4118 Features Excellent hFE linearity:: hFE(2)=25(min) Complementary to 2SA15881 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA Ba

SMD Type MOSFETP-Channel MOSFETAO4411 (KO4411)SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-10V) RDS(ON) 32m (VGS =-10V)1.50 0.15 RDS(ON) 55m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-

SMD Type TransistorsNPN Transistors2SC4117 Features High voltage: VCEO = 120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15871 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120

SMD Type TransistorsNPN Transistors2SC2411 (2SC2411K)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A1 2 Low VCE(sat).Optimal for low voltage operation.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complements the 2SA1036/2SA1036K1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter

SMD Type TransistorsNPN Transistors2SC41151.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA15850.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base

SMD Type orSMD Type TransistICsPNP Transistors 2SA1411SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesVery high DC current gain:hFE=500 to 1600.High VEBO Voltage:VEBO=-10V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -25 VCollector-emitte

SMD Type TransistorsNPN Transistors2SC4116 Features High voltage and high current High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15861 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

2SC2411KNPN GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE 32 Volts POWER 225mWFEATURES0.120(3.04) NPN epitaxial silicon,planar design0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICAL DAT

PPJA3411 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A

CHENMKO ENTERPRISE CO.,LTD2SC2411KGPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST

N-Channel CICLON NexFET Power MOSFETs CSD16411Q3 Product Summary Features Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 2.9 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 0.7 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 12 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 8 m Pb Free Terminal Plating Vth 2.0 V RoHS Compli

Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)

Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

Single P-channel MOSFETELM33411CA-SGeneral description Features ELM33411CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

2SC2411K(3DG2411K) NPN /SILICON NPN TRANSISTOR :/Purpose: Medium power amplifier applications. :,, 2SA1036K(3CG1036K) Features: Large I , low V ,complementary pair with the 2SA1036K(3CG1036K). C CE(sat)/Absolute maximum ratings(Ta=25)

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

ME4411/ME4411-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4411-G is the P-Channel logic enhancement mode power RDS(ON)10m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON)13m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25

MMP4411DYData SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-13.0A = 10mRDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristic

STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) FEATURE 60V/20.0A, RDS(ON) = 10m (Typ.) TO-252 TO-251 @VGS =

SUNROC2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD: 0.3 W (Tamb=25) 2. COLLECTOR Collector current I CM: 3 A 3. BASE Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy

Tin Far Electronic CO.,LTDPage No: 2/6Characteristics (Ta=25C)Symbol Min. Typ. Max. Unit Test ConditionsBV 75 - - V I =10A CBO CBV 40 - - V I =10mA CEO CBV 6 - - V I =10A EBO EI - - 10 nA V =60V CBO CBI - - 10 nA V =60V, V =-3V CEX CE BEI - - 10 nA V =3V EBO EB*V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B*V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B*

Tin Far Electronic CO.,LTD Page No: 1/5 TFH2411 Features Two TFS2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High IC(Max) . IC (Max) = 0.6A Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA O

Tin Far Electronic CO.,LTDPage No: 1/4TFS2411 Description The TFS2411 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low VCE(sat) Low leakage current High cutoff frequency Complementary to TFS1036 Symbol OutlineTFS2411 SOT-323 BBase C

QM2411J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req

QM2411K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3Afor most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir

QM2411G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req

QM2411SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2Acharge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc

QM2411V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ

HSM4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 40 m converter applications. ID -7.5 A The HSM4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

HSBB4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4115 is the high cell density trenched VDS -40 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -39 A The HSBB4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

HSU4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4115 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -52 A The HSU4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

HSU4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID -23 A The HSU4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

HSM4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 13 m gate charge for most of the synchronous buck converter applications. ID -8.7 A The HSM4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

IRFB4110100 V N-Channel MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supplyl High Speed Power Switchingl Hard Switched and High Frequency CircuitsBenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacitance and AvalancheSOADl Enhanced body diode dV/dt and dI/dt Capabilityl Lead Freel

IRFP4110N-Channel Enhancement Mode MOSFETElectrical Characteristics(TC=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitsOff CharacteristicsDrain-Sourtce Breakdown Voltage VGS=0V,ID=250A 100 --- --- VBVDSSZero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 AIDSSGate-Source Leakage CurrentIGSS VGS=20V, VDS=0A --- --- 100 nAOn Chara

SM4411P-Channel Enhancement Mode Field Effect TransistorDescription The SM4411 uses advanced trench technology to S Dprovide excellent RDS(ON), and ultra-low low gate S Dcharge. This device is suitable for use as a load S DG Dswitch or in PWM applications. Top ViewSOIC-8General Features D VDS (V) = -30VID = -8 A (VGS = -10V)RDS(ON)

2SC4110T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Volta

AO4411www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi

IRFR3411PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

IRFR3411TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

NTGS4111PTwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-

AOD4112www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

HM4110TN-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

HMS4110TN-Channel Super Trench Power MOSFET Description The HMS4110T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

100VDS25VGS170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0VVGSS=25VID=1 0A RDS(ON)=5 m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V

isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2N4112DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

iscN-Channel MOSFET Transistor 2SK4115FEATURESLow drain-source on-resistance:RDS(ON) = 2.0 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor IRFI4110G,IIRFI4110GFEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh speed power switchingHard switch and high frequency circuitsABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4115FEATURESWith TO-262 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc N-Channel MOSFET Transistor 2SK4118LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc Silicon NPN Power Transistor 2N4114DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC5411DESCRIPTIONWith TO-3PFa packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCB

isc N-Channel MOSFET Transistor IRFU3411FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4110IIRFP4110FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr

isc N-Channel MOSFET Transistor 2SK4119LSFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc Silicon NPN Power Transistor 2N4113DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1411DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1018Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

isc Silicon NPN Power Transistor MJ411DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 300V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= 0.8 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circ

isc N-Channel MOSFET Transistor 2SK1411DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

isc N-Channel MOSFET Transistor 2SK4116LSFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.54(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE

isc Silicon NPN Power Transistor 2N4111DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc N-Channel MOSFET Transistor 2SK4117LSFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

isc Silicon NPN Power Transistor 2SC4116DESCRIPTIONWith SOT-323 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBO

isc P-Channel MOSFET Transistor AOB411LFEATURESDrain Current I = -78A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

isc Silicon PNP Darlington Power Transistor 2SB1411DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -1A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -1A, I = -2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSH

isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411FEATURESStatic drain-source on-resistance:RDS(on)44mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate

isc Silicon NPN Power Transistor 2SC4111DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS4115PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T