423 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

ME7423S-G P-Channel Enhancement Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 13m@VGS=-10V The ME7423 P-Channel logic enhancement mode power field effect RDS(ON) 17m@ VGS=-4.5V transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular

NTMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.0 mW @ 10 V40

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF421/DHigh Voltage TransistorsBF421PNP SiliconBF423COLLECTOR23BASE1EMITTER123MAXIMUM RATINGSRating Symbol BF421 BF423 UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 300 250 VdcCollectorBase Voltage VCBO 300 250 VdcEmitterBase Voltage VEBO

FastIRFET IRFHM4231TRPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 3.4(@ VGS = 10V) m(@ VGS = 4.5V) 4.6 Qg (typical) 9.7 nC ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 9.7nC) Low Switching Losses Low RDSon (

FastIRFET IRFH4234PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 4.6(@ VGS = 10V) m(@ VGS = 4.5V) 7.3 Qg (typical) 8.2 nC ID 60 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 8.2 nC) Lo

PD - 96965AIRFP4232PbFPDP MOSFETFeaturesKey Parametersl Advanced process technologyVDS min 250 Vl Key parameters optimized for PDP Sustain & Energy Recovery applicationsVDS (Avalanche) typ. 300 Vl Low EPULSE rating to reduce the powermRDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applicationsEPULSE typ. 310 Jl Low QG for fast responseIRP max @ TC= 100Cl

FastIRFET IRFHM4234TRPbF HEXFET Power MOSFET Top View VDSS 25 V RDS(on) max 4.4 D 5 4 G(@ VGS = 10V) mD 6 3 S(@ VGS = 4.5V) 7.1 D 7 2 SQg (typical) 8.2 nC D 8 1 SID 60 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low Charge (typical 8.2 nC) Low Switching

PD - 97004AIRFB4233PbFPDP SWITCHFeaturesKey Parametersl Advanced process technologyVDS min 230 Vl Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 276 Vl Low EPULSE rating to reduce power dissipationmRDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and PassIRP max @ TC= 100C 114 A Switch Applications

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421; BF423PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF421; BF423FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421; BF423PNP high voltage transistorsProduct specification 2004 Nov 10Supersedes data of 1996 Dec 09Philips Semiconductors Product specificationPNP high voltage transistors BF421; BF423FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Class-B video output stages in

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421; BF423PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF421; BF423FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421L; BF423LPNP high-voltage transistors1999 Apr 21Product specificationSupersedes data of 1997 Apr 18Philips Semiconductors Product specificationPNP high-voltage transistors BF421L; BF423LFEATURES PINNING Low current (max. 50 mA)PIN DESCRIPTION High voltage (max. 300 V)1 base Available with a highe

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS4230T30 V, 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet30 V, 2 A PBSS4230TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

SD1423RF & MICROWAVE TRANSISTORS800-960MHz BASE STATION APPLICATIONS.800 - 960 MHz.24 VOLTS.EFFICIENCY 50%.COMMON EMITTER.GOLD METALLIZATION.CLASS AB LINEAR OPERATION.P 15 W MIN. WITH 8.0 dB GAINOUT =.230 6LFL (M118)epoxy sealedORDE R CODEBRANDINGSD1423SD1423DESCRIPTIONPIN CONNECTIONThe SD1423 is a gold metallization epitaxial siliconNPN planar transistor

2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitt

SFT1423Ordering number : ENA1509SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1423ApplicationsFeatures Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 2 A

Ordering number:EN3561N-Channel Silicon MOSFET2SK1423Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2056A Converters.[2SK1423]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO3PBSpecificationsAbsolute Maximum Ratings at Ta

Ordering number:EN2854NPN Triple Diffused Planar Silicon Transistor2SC4423400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4423] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

HUFA76423P3, HUFA76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE)- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Ele

HUF76423D3, HUF76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchildPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

HUF76423P3, HUF76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElec

HUFA76423D3, HUFA76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

PBSS4230PAN30 V, 2 A NPN/NPN low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

PBSS4230PANP30 V, 2 A NPN/PNP low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect

PBSS4230QA30 V, 2 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5230QA.2. Features and benefits Very low collector-emitter

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PNP Silicon Transistors BF 421With High Reverse Voltage BF 423 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 420, BF 422 (NPN)231Type Marking Ordering Code Pin Configuration Package1)1 2 3BF 421 Q62702-F532 E C B TO-92BF 423 Q62702-F496Maximum RatingsParameter Symbol Values UnitBF 421 BF 423Collector-e

Si6423DQVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET0.0085 at VGS = - 4.5 V - 9.5RoHS0.0106 at VGS = - 2.5 V - 12 - 8.5COMPLIANTAPPLICATIONS0.014 at VGS = - 1.8 V - 7.5 Load SwitchS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S

U421/423Vishay SiliconixMonolithic N-Channel JFET DualsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 - VGS2j Max (mV)U421 -0.4 to-2 -40 0.3 -0.25 10U423 -0.4 to -2 -40 0.3 -0.25 25FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Ultralow Input CurrentDifferential AmpsD High Slew Rate D Improv

SQS423ENwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) - 30 100 % Rg and UIS TestedRDS(on) () at VGS = - 10 V 0.021 Material categorization:RDS(on) () at VGS = - 4.5 V 0.060For definitions of compliance please see ID (A) - 16www.vishay.com/d

Si4423DYVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0075 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET 0.009 at VGS = - 2.5 V - 13- 20 Compliant to RoHS Directive 2002/95/EC0.0115 at VGS = - 1.8 V - 12APPLICATIONS Game StationSO-8 - Load Switc

Si7423DNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.018 at VGS = - 10 V - 11.7 TrenchFET Power MOSFET- 300.030 at VGS = - 4.5 V - 9.0 New PowerPAK Package- Low Thermal Resistance, RthJC- Low 1.07 mm Profile APPLICATIONSPowerPAK 1212-8 Ba

Si4230DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0205 at VGS = 10 V 830 7.30.026 at VGS = 4.5 V 8APPLICATIONS Low Current DC/DC Notebook PC- System PowerD1 D2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D

TM2N4237Central2N4238Semiconductor Corp.2N4239NPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4237,2N4238, and 2N4239 are Silicon NPN Transistors,in a hermetically sealed metal case designed forpower amplifier, power driver and switching powersupply applications. JEDEC TO-39 CASEMAXIMUM RATINGS: (TC=25C unless otherwise noted)SYMBOL 2N4237 2N4238 2N

OM6423SP6 OM6425SP6Preliminary Data SheetOM6424SP6 OM6426SP6POWER MOSFETS IN 11-PIN INDUSTRIALSIP PACKAGEIndustrial 11-Pin, 150 to 500 V, N-ChannelPower MOSFET, Full H BridgeFEATURES Low RDS(on) Fast Switching Single SIP Package 3 Voltage, Current RatingsDESCRIPTIONThis series of H Bridge configured circuits provides the user with a low cost sol

BF421, BF423High Voltage TransistorsPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantMAXIMUM RATINGSRating Symbol BF421 BF423 UnitTO-92Collector-Emitter Voltage VCEO -300 -250 VdcCASE 29STYLE 14Collector-Base Voltage VCBO -300 -250 Vdc1122Emitter-Base Voltage VEBO -5.0 Vdc33STRAIGHT LEAD BENT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.0 mW @ 10 VPar

NVMFS5C423NLPower MOSFET40 V, 2.0 mW, 150 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C423NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.0 mW

Power Transistors2SC5423Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=7A

2SD2423Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierFeaturesThe transistor with a built-in zener diode of surge absorb.OutlineUPAK2, 41231ID41. Base2. Collector2 k 0.5 3. Emitter(Typ) (Typ)4. Collector (Flange)32SD2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50

2SK2423Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

"2N4236X"2N4236XDimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed p

SFN423P -6.6 A , -20 V , RDS(ON) 42 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DFN2x2-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. T

STT3423P -5.7 A, -20 V, RDS(ON) 42 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6These miniature surface mount MOSFETs utilize a high cell density Atrench process to provide low RDS(on) and to ensure minimal power ELloss and heat dissipation. Typical applica

Product Data SheetDecember 16, 2002DC - 12 GHz Discrete HFET TGF4230-SCCKey Features and Performance Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 m HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x0.004 in) Bias at 8 Volts, 96 mAPrimary Applications Cellular Base Stations High dynamic-rang

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421VIDEO TRANSISTORS BF423TO-92Plastic PackageHigh Voltage Video AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 423 421 UNITSVCEOCollector Emitter Voltage 250 300 VVCBOCollector Base Voltage 250 300

Continental Device India LimitedAn ISO/TS 16949 and ISO 9001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4234, 2N42352N4236 TO-39 Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNITVCEOCollector Emitter Voltage 40 60 80 VVCBOCollector Base Voltage 40 60 80 VVEBOEmitter Base Voltage 7.0 VIBBase Curr

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF421 TRANSISTOR (PNP)TO-92 BF423 1. EMITTER FEATURES Low Feedback Capacitance. 2.COLLECTOR PNP Transistors in a TO-92 Plastic Package.3. BASE NPN Complements: BF420 and BF422 Class-B Video Output Stages in ColourTelevision and Professional Monitor Equipment. Equivalent Ci

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

SEMICONDUCTOR KTB1423TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATIONS.HAMMER DRIVER, PULSE MOTOR DRIVERACAPPLICATIONS.DIM MILLIMETERSS_A 10.0 0.3+_+B 15.0 0.3FEATURES EC _2.70 0.3+DHigh DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. 0.76+0.09/-0.05_E 3.2 0.2+High Collector Breakdown Voltage : VCEO=-120V (Min.)_F 3.0

SEMICONDUCTOR BF423TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPEHIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS.B CFEATURES High Voltage : VCEO>-300VComplementary to BF422.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_

SEMICONDUCTOR KTC3423TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATION. ABDCEFEATURESFHigh Breakdown Voltage : VCEO=150V(Min.).Low Output Capacitance : Cob=5.0pF(Max.).GHigh Transition Frequency : fT=120MHz(Typ.).HComplementary to KTA1360.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.

CED3423/CEU3423P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -18A, RDS(ON) = 45m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

BF421/BF423(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. PNP transistors in a TO-92 plastic package. NPN complements: BF420 and BF422 Class-B video output stages in colour television and professional monitor equipment. Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

Spec. No. : HE6403HI-SINCERITYIssued Date : 1993.03.18Revised Date : 2003.06.18MICROELECTRONICS CORP.Page No. : 1/4HBF423PNP EPITAXIAL PLANAR TRANSISTORDescriptionVideo B-class Power stages in TV-receiversTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .............................................................................................

AO342320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3423 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

AO442330V P-Channel MOSFETGeneral Description Product SummaryThe AO4423 uses advanced trench technology to provide VDS (V) = -30Vexcellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V)25V gate rating. This device is suitable for use as a load RDS(ON)

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

AOC242320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2423 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

AP4423GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4423 series are from

AP4230GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 7A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination of f

AP4232AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 23mD1D1 Dual N MOSFET Package ID 7.8AG2S2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedized devi

AP4232GM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 22mD1D1 Dual N MOSFET Package ID 7.8AG2 RoHS Compliant & Halogen-FreeS2G1SO-8S1DescriptionAP4232 series are fro

AP4232BGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 22m Fast Switching Characteristic ID 7.6A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2S2designer with the best combination o

AP4423GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 15mD Fast Switching Characteristic ID -11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of f

AP4232GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 22mD1D1 Dual N MOSFET Package ID 7.8AG2 RoHS CompliantS2G1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switchi

Analog Power AM5423PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 0.024 @ VGS = -4.5V -8.4converters and power management in portable and -200.031 @ VGS = -2.5V -7.4

Analog Power AM7423PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 5 @ VGS = -4.5V -26converters and power management in portable and -207 @ VGS = -2.5V -22batte

Analog Power AMA423PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)42 @ VGS = -4.5V -6.6 Low thermal impedance-20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-driveDFN2x2-8Typical Applications: Battery Powered Instruments Portable

Analog Power AM3423PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)42 @ VGS = -4.5V -5.7 Low thermal impedance -20 57 @ VGS = -2.5V -4.9 Fast switching speed 80 @ VGS = -1.8V -4.1Typical Applications: White LED boost converters TSOP-6 Automotive Systems Industrial DC/DC Conve

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423AO3423P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3423 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

Spec. No. : C235A3 Issued Date : 2004.02.24 CYStech Electronics Corp.Revised Date : 2014.04.01 Page No. : 1/5 PNP Epitaxial Planar Transistor BF423A3Description PNP high voltage transistors in a TO-92 plastic package. Complementary to BF422A3 Pb-free lead plating package Features Low feedback capacitance. Applications Class-B video output stages

Spec. No. : C423Q8 Issued Date : 2007.11.15 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

APM4230KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 25V/13.5A, DDDRDS(ON)=6m(typ.) @ VGS=10VRDS(ON)=7.5m(typ.) @ VGS=4.5VSS Super High Dense Cell DesignSG Avalanche Rated Top View of SOP - 8 Reliable and Rugged SOP-8 Package ( 5,6,7,8 ) L

GreenProductS T B / P 4 2 3 SS amHop Microelectronics C orp. Feb.26,2007P-Channel Logic Level Enhancement Mode Field Effect TransistorPR ODUC T S UMMAR YF E ATUR E S4R DS (ON) ( m ) MaxVDS S IDS uper high dense cell design for extremely low R DS (ON).9.5 @ VG S = -10V High power and current handling capability.- 40V - 65ATO-220 & TO-263 package.12.5 @ VG S

P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H423 APPLICATIONS Class-B video output stages in colour television and professional monitor equipment ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1423 GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

Product specification KO3423SOT-23-3Unit: mm Features2.9+0.2-0.20.4+0.1-0.05 VDS (V) = -20V3 RDS(ON) 100m (VGS = -4.5V) RDS(ON) 150m (VGS = -2.5V)12+0.10.95-0.1 0.1+0.05-0.01+0.21.9-0.2D 1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage

SEMICONDUCTOR DWA401~412TECHNICAL DATADWA417,422,423Dual Bias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. Thesedigital transistors are designed to replace

DTA401~411 / DTA417SEMICONDUCTORTECHNICAL DATA DTA422~423Bias Resistor TransistorsPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network2consisti

SMD TypeAO3423 (KO3423)SOT-23Unit: mm+0.22.9-0.2+0.10.4 -0.0531 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.2-0.2D ESD Rating: 2000V HBMG 1. Gate2. Source3. DrainS 0.4+0.2+0.22.8-0.21.6-0.10.55+0.21.1-0.1+0.10-0.10.38-0.1SMD TypeAO3423 (KO3423)TestconditionsAS*SMD TypeAO3423 (KO3423)1015-10.0V-4.0VVDS=-5V-8

SMD Type MOSFETP-Channel MOSFETAO4423 (KO4423)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) RDS(ON) 7m (VGS =-20V)1.50 0.15 RDS(ON) 8.5m (VGS =-10V) RDS(ON) 12 m (VGS =- 6 V)1 Source 5 Drain ESD Rating: 3000V HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Par

SMD Type MOSFETP-Channel Enhancement MOSFET AO3423 (KO3423)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.0 A (VGS =-10V)D1 2 RDS(ON) 92m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 118m (VGS =-4.5V) +0.11.9 -0.2 RDS(ON) 166m (VGS =-2.5V)G1. Gate2. Source3. DrainS Abso

SMD Type TransistorsNPN Transistors2SD2423SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.1BID1.Base2 k 0.5 2.Collector(Typ) (Typ)E 3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

SVT04230NR 7A40V N 2SVT04230NR N MOS LVMOS 1

CHENMKO ENTERPRISE CO.,LTDCHM1423WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE 0.651.30.12.00.20.65* Small surface mounting type. (SC-7

Single P-channel MOSFETELM34423AA-NGeneral description Features ELM34423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8Aresistance. Internal ESD protection is included. Rds(on)

Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

ME7423S-G P-Channel 30V(D-S) MOSFET D GENERAL DESCRIPTION FEATURES The ME7423S P-Channel logic enhancement mode power field RDS(ON) 13m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

20V P-Channel MOSFETs PMEN2423S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 43m -4A advanced technology has been especially tailored to -20V,-4A, RDS(ON) =43m@VGS = -4.5V minimize on-state resistance, provide superior switching Low gate charge (typicalQ gd 4.5nC) p

SSM4423GMP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDDLower gate charge R 15mDS(ON)DDFast switching characteristics ID -11AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.

SSM4232GMN-CHANNEL ENHANCEMENT MODE POWER MOSFETPRODUCT SUMMARY D2BVDSS 30VD2Low On-Resistance D1D1 RDS(ON) 22mSimple Drive Requirement ID 7.8AG2Dual N MOSFET Package S2G1SO-8S1DESCRIPTION D2D1The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2switching, ruggedized device design, ultra

QM2423K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2Afor most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ

QM2423V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2423V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.5Afor most of the small power switching and load switch applications. Applications The QM2423V meet the RoHS and Green Product requ

RUMW UMW AO3423ASOT-23-3L Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETAO3423AV(BR)DSS RDS(on)MAX ID120m@-4.5V-20 V -2A150m@-2.5VFEATUREAPPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices ESD Protected 2.0KV DC/DC ConverterMARKINGEquivalent Circuit SOT23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 un

P-Channel MOSFET AS3423SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.

P-Channel MOSFET AO3423BSOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0

P-Channel Enhancement Mode MOSFETFormosa MSAS3423BProduct Summary V(BR)DSS RDS(on)MAX ID 90m@-4.5V -20V -3A 110m@-2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23-3LMarking AS23 http://www.formosagr.com Document ID I

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF3423TF3423 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.0A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageAS3TF wAPPLICATION

WST3423 P-Ch MOSFETGeneral Description Product SummeryThe WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9Afor most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu

2SC4237T8TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Voltage 7 VEBOI Collector Curr

AO3423www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

QM2423Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

AO4423www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S

SI6423DQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3

HM44 Description The HM44 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -2 A RDS(ON)

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4237DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Vo

isc Silicon PNP Power Transistor 2N6423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -500 VCBOV Collector-Emitter Voltage

isc P-Channel MOSFET Transistor AOI423FEATURESDrain Current I = -70A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4235DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4231DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4233DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOD423FEATURESWith TO-252( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOY423FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4234DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor 2N4231DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4236DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2N4232ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4232DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor 2SC4423DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4230DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingSwitch mode power suppliesABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOComplement to Type 2SA1360Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon NPN Power Transistor 2N4233ADESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor MJ423DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 325V(Min.)CEO(SUS)DC Current Gain-: h = 30-90@ I = 1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium to high voltage inverters, converters,regulators and switching circuits.ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SC4237DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV C

isc N-Channel MOSFET Transistor 2SK2423DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr