423 Datasheet. Specs and Replacement
Type Designator: 423
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
423 Substitution
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423 datasheet
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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) ... See More ⇒
AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide VDS (V) = -30V excellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V) 25V gate rating. This device is suitable for use as a load RDS(ON) ... See More ⇒
AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) ... See More ⇒
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) ... See More ⇒
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) ... See More ⇒
AOD423/AOI423/AOY423 TM 30V P-Channel AlphaSGT General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) ... See More ⇒
AOC2423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) ... See More ⇒
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4423 series are from ... See More ⇒
AP4230GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 7A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination of f... See More ⇒
AP4232AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 23m D1 D1 Dual N MOSFET Package ID 7.8A G2 S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized devi... See More ⇒
AP4232GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 22m D1 D1 Dual N MOSFET Package ID 7.8A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description AP4232 series are fro... See More ⇒
AP4232BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 22m Fast Switching Characteristic ID 7.6A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination o... See More ⇒
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f... See More ⇒
AP4232GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 22m D1 D1 Dual N MOSFET Package ID 7.8A G2 RoHS Compliant S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchi... See More ⇒
Analog Power AM5423P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 0.024 @ VGS = -4.5V -8.4 converters and power management in portable and -20 0.031 @ VGS = -2.5V -7.4... See More ⇒
Analog Power AM7423P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 5 @ VGS = -4.5V -26 converters and power management in portable and -20 7 @ VGS = -2.5V -22 batte... See More ⇒
Analog Power AMA423P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 42 @ VGS = -4.5V -6.6 Low thermal impedance -20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package 86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-drive DFN2x2-8 Typical Applications Battery Powered Instruments Portable... See More ⇒
Analog Power AM3423P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 42 @ VGS = -4.5V -5.7 Low thermal impedance -20 57 @ VGS = -2.5V -4.9 Fast switching speed 80 @ VGS = -1.8V -4.1 Typical Applications White LED boost converters TSOP-6 Automotive Systems Industrial DC/DC Conve... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423 AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON) ... See More ⇒
Spec. No. C235A3 Issued Date 2004.02.24 CYStech Electronics Corp. Revised Date 2014.04.01 Page No. 1/5 PNP Epitaxial Planar Transistor BF423A3 Description PNP high voltage transistors in a TO-92 plastic package. Complementary to BF422A3 Pb-free lead plating package Features Low feedback capacitance. Applications Class-B video output stages... See More ⇒
Spec. No. C423Q8 Issued Date 2007.11.15 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack... See More ⇒
APM4230K N-Channel Enhancement Mode MOSFET Features Pin Description D 25V/13.5A, D D D RDS(ON)=6m (typ.) @ VGS=10V RDS(ON)=7.5m (typ.) @ VGS=4.5V S S Super High Dense Cell Design S G Avalanche Rated Top View of SOP - 8 Reliable and Rugged SOP-8 Package ( 5,6,7,8 ) L... See More ⇒
Green Product S T B / P 4 2 3 S S amHop Microelectronics C orp. Feb.26,2007 P-Channel Logic Level Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S 4 R DS (ON) ( m ) Max VDS S ID S uper high dense cell design for extremely low R DS (ON) . 9.5 @ VG S = -10V High power and current handling capability. - 40V - 65A TO-220 & TO-263 package. 12.5 @ VG S ... See More ⇒
P NP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H423 APPLICATIONS Class-B video output stages in colour television and professional monitor equipment ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 ... See More ⇒
Product specification KO3423 SOT-23-3 Unit mm Features 2.9+0.2 -0.2 0.4+0.1 -0.05 VDS (V) = -20V 3 RDS(ON) 100m (VGS = -4.5V) RDS(ON) 150m (VGS = -2.5V) 12 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.2 1.9-0.2 D 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage... See More ⇒
dwa401-dwa412 dwa417 dwa422 dwa423.pdf
SEMICONDUCTOR DWA401 412 TECHNICAL DATA DWA417,422,423 Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. These digital transistors are designed to replace... See More ⇒
dta401-dta411 dta417 dta422-dta423.pdf
DTA401 411 / DTA417 SEMICONDUCTOR TECHNICAL DATA DTA422 423 Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 2 consisti... See More ⇒
SMD Type AO3423 (KO3423) SOT-23 Unit mm +0.2 2.9-0.2 +0.1 0.4 -0.05 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.2 -0.2 D ESD Rating 2000V HBM G 1. Gate 2. Source 3. Drain S 0.4 +0.2 +0.2 2.8 -0.2 1.6 -0.1 0.55 +0.2 1.1 -0.1 +0.1 0-0.1 0.38 -0.1 SMD Type AO3423 (KO3423) Testconditions AS* SMD Type AO3423 (KO3423) 10 15 -10.0V -4.0V VDS=-5V -8... See More ⇒
SMD Type MOSFET P-Channel MOSFET AO4423 (KO4423) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) RDS(ON) 7m (VGS =-20V) 1.50 0.15 RDS(ON) 8.5m (VGS =-10V) RDS(ON) 12 m (VGS =- 6 V) 1 Source 5 Drain ESD Rating 3000V HBM 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Par... See More ⇒
SMD Type MOSFET P-Channel Enhancement MOSFET AO3423 (KO3423) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.0 A (VGS =-10V) D 1 2 RDS(ON) 92m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 118m (VGS =-4.5V) +0.1 1.9 -0.2 RDS(ON) 166m (VGS =-2.5V) G 1. Gate 2. Source 3. Drain S Abso... See More ⇒
SMD Type Transistors NPN Transistors 2SD2423 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 2.Collector (Typ) (Typ) E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHM1423WGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter SC-70/SOT-323 * Load Switch * DSC * LCD Display inverter FEATURE 0.65 1.3 0.1 2.0 0.2 0.65 * Small surface mounting type. (SC-7... See More ⇒
Single P-channel MOSFET ELM34423AA-N General description Features ELM34423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Internal ESD protection is included. Rds(on) ... See More ⇒
Single P-channel MOSFET ELM14423AA-N General description Features ELM14423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on) ... See More ⇒
ME7423S-G P-Channel 30V(D-S) MOSFET D GENERAL DESCRIPTION FEATURES The ME7423S P-Channel logic enhancement mode power field RDS(ON) 13m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 17m @ VGS=-4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly... See More ⇒
20V P-Channel MOSFETs PMEN2423S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 43m -4A advanced technology has been especially tailored to -20V,-4A, RDS(ON) =43m @VGS = -4.5V minimize on-state resistance, provide superior switching Low gate charge (typicalQ gd 4.5nC) p... See More ⇒
SSM4423GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -30V DSS D D Lower gate charge R 15m DS(ON) D D Fast switching characteristics ID -11A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. ... See More ⇒
SSM4232GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 BVDSS 30V D2 Low On-Resistance D1 D1 RDS(ON) 22m Simple Drive Requirement ID 7.8A G2 Dual N MOSFET Package S2 G1 SO-8 S1 DESCRIPTION D2 D1 The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast G2 switching, ruggedized device design, ultra... See More ⇒
QM2423K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2423K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.2A for most of the small power switching and load switch applications. Applications The QM2423K meet the RoHS and Green Product requ... See More ⇒
QM2423V P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2423V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 40m -4.5A for most of the small power switching and load switch applications. Applications The QM2423V meet the RoHS and Green Product requ... See More ⇒
R UMW UMW AO3423A SOT-23-3L Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET AO3423A V(BR)DSS RDS(on)MAX ID 120m @-4.5V -20 V -2A 150m @-2.5V FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices ESD Protected 2.0KV DC/DC Converter MARKING Equivalent Circuit SOT 23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 un... See More ⇒
P-Channel MOSFET AS3423 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.... See More ⇒
P-Channel MOSFET AO3423B SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0... See More ⇒
P-Channel Enhancement Mode MOSFET Formosa MS AS3423B Product Summary V(BR)DSS RDS(on)MAX ID 90m @-4.5V -20V -3A 110m @-2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23-3L Marking AS23 http //www.formosagr.com Document ID I... See More ⇒
WST3423 P-Ch MOSFET General Description Product Summery The WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9A for most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu... See More ⇒
2SC4237T8TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Curr... See More ⇒
AO3423 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒
AO4423 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S... See More ⇒
SI6423DQ-T1 www.VBsemi.tw P-Channel 20-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = - 4.5 V Available - 9.0 RoHS* 0.015 at VGS = - 2.5 V -20 - 7.8 COMPLIANT 0.020 at VGS = - 1.8 V - 6.0 S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3 ... See More ⇒
HM44 Description The HM44 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -2 A RDS(ON) ... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Vo... See More ⇒
isc Silicon PNP Power Transistor 2N6423 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -500 V CBO V Collector-Emitter Voltage ... See More ⇒
isc P-Channel MOSFET Transistor AOI423 FEATURES Drain Current I = -70A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4235 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4231 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4233 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc P-Channel MOSFET Transistor AOD423 FEATURES With TO-252( DPAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RA... See More ⇒
INCHANGE Semiconductor isc P-Channel MOSFET Transistor AOY423 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4234 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
isc Silicon NPN Power Transistor 2N4231 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4236 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
isc Silicon NPN Power Transistor 2N4232A DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4232 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
isc Silicon NPN Power Transistor 2SC4423 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RAT... See More ⇒
isc Silicon NPN Power Transistor 2SC3423 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Complement to Type 2SA1360 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
isc Silicon NPN Power Transistor 2N4233A DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
isc Silicon NPN Power Transistor MJ423 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 325V(Min.) CEO(SUS) DC Current Gain- h = 30-90@ I = 1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS... See More ⇒
isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V C... See More ⇒
isc N-Channel MOSFET Transistor 2SK2423 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
Detailed specifications: 41500, 41501, 41502, 41503, 41504, 41505, 41506, 41508, 2SC2655, 431, 43104, 45190, 45191, 45192, 45193, 45194, 45195
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