431 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 431 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 325 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO3
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431 datasheet
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SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pro
tsm4431cs.pdf
TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m ) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A
2sd1431.pdf
NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC
rt5n431c.pdf
RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 2.8 RT5N431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor, PNP type is RT5P431C. FEATURE Built-in bias resistor R =4.7k , R =4.7k 1 2 High collector current Ic=0.5A Mini package for easy mounting
rt1n431c rt1n431m rt1n431s rt1n431u.pdf
Transistor RT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=4.7k ,R2=4.7k ). APPLICATION Inverted circuit,swit
rt5p431c.pdf
RT5P431C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE Built-in bias resistor R =4.7k , R =4.7k 1 2 High collector current Ic=-0.5A Mini package for easy mounting APPLICATION Inve
rt5p431s.pdf
RT5P431S Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor R =4.7k , R =4.7k 1 2 0.1 High collector current Ic=-0.5A 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ
rt1p431c rt1p431m rt1p431s.pdf
Transistor RT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT mm RT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor (R1=4.7k ,R2=4.7k ). APPLICATION Inverted circuit,s
sta431a.pdf
PNP + NPN H-bridge External dimensions STA (10-pin) STA431A D Absolute maximum ratings (Ta=25 C) Ratings Symbol Unit NPN PNP VCBO 60 60 V VCEO 60 60 V VEBO 6 6V IC 3 3A ICP 6 (PW 10ms, Du 50%) 6 (PW 10ms, Du 50%) A 4 (Ta=25 C) PT W 20 (Tc=25 C) Tj 150 C Tstg 40 to +150 C Equivalent circuit diagram 10 6 8 7 9 3 5 24 1 Charact
ced4311 ceu4311.pdf
CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX
cem4311.pdf
CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe
gm431.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM431 DESCRIPTION&SYMBOL DESCRIPTION&SYMBOL DESCRIPTION&SYMBOL 36 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS
wtk9431.pdf
WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free -3.5 AMPERES DRAIN SOURCE VOLTAGE Features -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * R
ao4314.pdf
AO4314 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 20A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4312.pdf
AO4312 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 23A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4310.pdf
AO4310 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 27A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aons74312.pdf
AONS74312 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Very Low RDS(on) ID (at VGS=10V) 210A Low Gate Charge RDS(ON) (at VGS=10V)
ap9431gh-hf.pdf
AP9431GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 55V Simple Drive Requirement RDS(ON) 24m Fast Switching Characteristic ID 23.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,
am7431p.pdf
Analog Power AM7431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -17 converters and power management in portable and -30 19 @ VGS = -4.5V -14 batte
am4431p.pdf
Analog Power AM4431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 5 @ VGS = -10V -21 Low thermal impedance -30 7 @ VGS = -4.5V -17 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA
amcc431p.pdf
Analog Power AMCC431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -10V -5.9 converters and power management in portable and -30 90 @ VGS = -4.5V -4.8 b
am3431p.pdf
Analog Power AM3431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 24 @ VGS = -10V -7.5 Low thermal impedance -30 36 @ VGS = -4.5V -6.1 Fast switching speed Typical Applications TSOP-6 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS
am1431p.pdf
Analog Power AM1431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product
apm4315k.pdf
APM4315K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-11A, D D RDS(ON)= 11m (typ.) @ VGS=-10V RDS(ON)= 20m (typ.) @ VGS=-4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, Port
apm4317k.pdf
APM4317K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-9A, D D RDS(ON) = 16m (typ.) @ VGS = -10V RDS(ON) = 24m (typ.) @ VGS = -4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, P
apm4431k.pdf
APM4431K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-5.3A , RDS(ON)=32m (typ.) @ VGS=-10V RDS(ON)=50m (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 SOP-8 Package (1, 2, 3) S S S Lead Free Available (RoHS Compliant) Applications (4)G Power Management in Notebook Computer, Portable Equipment and Batter
sm4310psk.pdf
SM4310PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D D -30V/-9.3A, D RDS(ON) = 24m (max.) @ VGS =-10V RDS(ON) = 38m (max.) @ VGS =-4.5V S S Reliable and Rugged S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in Notebook Computer, Portable Equipment and Battery P
sm4311pskp.pdf
SM4311PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-100A, D D RDS(ON) =2.8m (max.) @ VGS =-10V D D RDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and Rugged G Pin 1 S S Lead Free and Green Devices Available S DFN5x6-8 (RoHS Compliant) HBM ESD Capability level of 6.6KV typical ( 5,6,7,8 ) D D D D Note The diode connected between the gate and sour
ao4314.pdf
SMD Type MOSFET N-Channel MOSFET AO4314 (KO4314) SOP-8 Features VDS (V) = 36V 1.50 0.15 ID = 20 A (VGS = 10V) RDS(ON) 6m (VGS = 10V) RDS(ON) 8.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
ao4312.pdf
SMD Type MOSFET N-Channel MOSFET AO4312 (KO4312) SOP-8 Features VDS (V) = 36V ID = 23 A (VGS = 10V) 1.50 0.15 RDS(ON) 4.5m (VGS = 10V) RDS(ON) 6.2m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
ao4310.pdf
SMD Type MOSFET N-Channel MOSFET AO4310 (KO4310) SOP-8 Features VDS (V) = 36V ID = 27 A (VGS = 10V) RDS(ON) 3.1m (VGS = 10V) 1.50 0.15 RDS(ON) 4.2m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
2sc4317.pdf
SMD Type Transistors NPN Transistors 2SC4317 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=40mA 1 2 Collector Emitter Voltage VCEO=10V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
pja3431.pdf
PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A
chm4311pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM4311PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) * High power and
chm4431jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM4431JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power
chm4311jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM4311JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power
wej431.pdf
RoHS WEJ431 WEJ431 Adjustable Accurate Reference Source SOT-89 FEATURES The output voltage can be adjusted to 36V 1. REFERENCE Low dynamic output impedance, its typical value is 0.2 Trapping current capability is 1 to 100mA 1 2. ANODE The typical value of the equivalent temperature factor in the 2 whole temperature scope is 50 ppm/ 3 3. CATHODE The effec
hsm4313.pdf
HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P- V -40 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),max converter applications. I -6.5 A D The HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun
vba4317.pdf
VBA4317 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1
si4431cdy-t1-e3.pdf
SI4431CDY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S
irfl4310tr.pdf
IRFL4310TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PA
vba4311.pdf
VBA4311 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) , ID (A)d, e Qg (Typ.) Typ. TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 12 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.013 at VGS = - 4.5 V - 10 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-8 S1 1 D1
cem4311.pdf
CEM4311 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G
hm4310.pdf
HM4310 100VDS 25VGS 140A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=100V VGSS= 25V ID=140A RDS(ON)=7.2m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System Switching Time Test Cir
2sk3431-z.pdf
isc N-Channel MOSFET Transistor 2SK3431-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
irfsl4310 .pdf
isc N-Channel MOSFET Transistor IRFSL4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sb1431.pdf
isc Silic on PNP Darlington Power Transistor 2SB1431 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -3A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A, I = -3mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
2sk2431.pdf
isc N-Channel MOSFET Transistor 2SK2431 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
irfb4310.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310 IIRFB4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU
2sk3431.pdf
isc N-Channel MOSFET Transistor 2SK3431 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
2sc1431.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
irfb4310z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI
2sk3431-s.pdf
isc N-Channel MOSFET Transistor 2SK3431-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
2sd1431.pdf
isc Silicon NPN Power Transistor 2SD1431 DESCRIPTION High Speed t = 1.0 us(MIN) @ I = 4A , I = 0.8A f C B(end) High Voltage V =1300V CBO Low Saturation Voltage V
irfs4310z.pdf
Isc N-Channel MOSFET Transistor IRFS4310Z FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
irfsl4310.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T
mj431.pdf
isc Silicon NPN Power Transistor MJ431 DESCRIPTION Collector-Emitter Voltage- V = 400V(Min) CEX DC Current Gain- h = 15-35@ I = 2.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium-to-high-voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
irfp4310z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Unin
irfb4310zpbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM
2sc4313.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V(Min) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
Otros transistores... 41501, 41502, 41503, 41504, 41505, 41506, 41508, 423, D880, 43104, 45190, 45191, 45192, 45193, 45194, 45195, 4NU72
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