431 Todos los transistores

Introduzca al menos 3 números o letras

431 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 431

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 325 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 431

 

431 Datasheet (PDF)

1.1. 2sk3431-s-z-zj.pdf Size:206K _update

431
431

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. rt1n431c rt1n431m rt1n431s rt1n431u.pdf Size:153K _update

431
431

 〈Transistor〉 RT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT:mm RT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.8 0.65 1.5 0.65 FEATURE ① ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). ② ③ APPLICATION Inverted circuit,swit

 1.3. wej431.pdf Size:129K _upd

431

RoHS WEJ431 WEJ431 Adjustable Accurate Reference Source SOT-89 FEATURES The output voltage can be adjusted to 36V 1. REFERENCE Low dynamic output impedance, its typical value is 0.2Ω Trapping current capability is 1 to 100mA 1 2. ANODE The typical value of the equivalent temperature factor in the 2 whole temperature scope is 50 ppm/ 3 3. CATHODE The effec

1.4. rt5n431c.pdf Size:130K _upd

431
431

 RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5N431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor, PNP type is RT5P431C. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=0.5A) ② ③ Mini package for easy mounting

 1.5. irf430 irf431 irf432 irf433.pdf Size:211K _upd

431
431



1.6. rt5p431s.pdf Size:146K _upd

431
431

 RT5P431S Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 0.1 High collector current (Ic=-0.5A) 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ

1.7. rt5p431c.pdf Size:146K _upd

431
431

 RT5P431C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=-0.5A) ② ③ Mini package for easy mounting APPLICATION Inve

1.8. am1431p.pdf Size:135K _upd-mosfet

431
431

Analog Power AM1431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product

1.9. irfb4310pbf.pdf Size:376K _upd-mosfet

431
431

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

1.10. irfb4310zgpbf.pdf Size:291K _upd-mosfet

431
431

PD - 96189 IRFB4310ZGPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

1.11. irfb4310zpbf.pdf Size:324K _upd-mosfet

431
431

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

1.12. irfp4310zpbf.pdf Size:299K _upd-mosfet

431
431

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

1.13. sia431dj.pdf Size:216K _upd-mosfet

431
431

New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • New Thermally Enhanced PowerPAK® 0.025 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area 0.031 at VGS = - 2.5 V - 12a - Low On-Resistance - 20 24 nC 0.041 at VGS = - 1.8 V - 12a • 100 % Rg Tested 0

1.14. irfb4310gpbf.pdf Size:285K _upd-mosfet

431
431

PD - 96190 IRFB4310GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

1.15. 2n431 2n432.pdf Size:297K _general_electric

431

1.16. 2sa1431.pdf Size:181K _toshiba

431
431



1.17. 2sc4317.pdf Size:467K _toshiba

431
431

2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

1.18. 2sc4315.pdf Size:463K _toshiba

431
431

2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

1.19. sft1431.pdf Size:492K _sanyo

431
431

SFT1431 Ordering number : ENA1624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1431 Applications Features Motor drive application. Low ON-resistance. 4V drive. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain C

1.20. 2sk1431.pdf Size:104K _sanyo

431
431

Ordering number:EN3569 N-Channel Silicon MOSFET 2SK1431 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2063A Converters. [2SK1431] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

1.21. mch6431.pdf Size:362K _sanyo

431
431

MCH6431 Ordering number : ENA1852 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6431 Applications Features ON-resistance RDS(on)1=42m (typ.) ? 4V drive Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage

1.22. r07ds0431ej 2sc1213a-1.pdf Size:170K _renesas

431
431

Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2S

1.23. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

431
431

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-264 1 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity

1.24. fjn4311r.pdf Size:26K _fairchild_semi

431
431

FJN4311R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K?) Complement to FJN3311R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage

1.25. fja4313.pdf Size:83K _fairchild_semi

431
431

FJA4313 Audio Power Amplifier High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V

1.26. fjn4310r.pdf Size:32K _fairchild_semi

431
431

FJN4310R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K?) Complement to FJN3310R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage

1.27. fjn4312r.pdf Size:26K _fairchild_semi

431
431

FJN4312R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K?) Complement to FJN3312R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage

1.28. fds9431a f085.pdf Size:358K _fairchild_semi

431
431

February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 ? @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 ? @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and y

1.29. fjaf4310.pdf Size:87K _fairchild_semi

431
431

FJAF4310 Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V

1.30. fjl4315.pdf Size:64K _fairchild_semi

431
431

FJL4315 Audio Power Amplifier High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V

1.31. fja4310.pdf Size:199K _fairchild_semi

431
431

October 2008 FJA4310 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter

1.32. fds9431a.pdf Size:75K _fairchild_semi

431
431

September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 ? @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 ? @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and yet main

1.33. 2sc5242 fja4313.pdf Size:468K _fairchild_semi

431
431

January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A TO-3P 1 High Power Dissipation : 130watts 1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity f

1.34. fjn4314r.pdf Size:27K _fairchild_semi

431
431

FJN4314R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K?, R2=47K?) Complement to FJN3314R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

1.35. fjn4313r.pdf Size:27K _fairchild_semi

431
431

FJN4313R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K?, R2=47K?) Complement to FJN3313R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Ba

1.36. irfl4310.pdf Size:313K _international_rectifier

431
431

PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

1.37. irfl4310pbf.pdf Size:659K _international_rectifier

431
431

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20Ω Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

1.38. irfl4315pbf.pdf Size:197K _international_rectifier

431
431

PD - 95258A IRFL4315PbF HEXFET® Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

1.39. irfl4315.pdf Size:121K _international_rectifier

431
431

PD - 94445 IRFL4315 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 185m? ?@VGS = 10V 2.6A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage and Current Abs

1.40. 2sc5431.pdf Size:51K _nec

431
431

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel Pin 3 (

1.41. si7431dp.pdf Size:493K _vishay

431
431

Si7431DP Vishay Siliconix P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition 0.174 at VGS = - 10 V - 3.8 • TrenchFET® Power MOSFETs - 200 88 0.180 at VGS = - 6 V - 3.6 • Ultra-Low On-Resistance Critical for Application • Low Thermal Resistance PowerPAK® Package with Lo

1.42. u430 u431.pdf Size:60K _vishay

431
431

1.43. si4431cd.pdf Size:269K _vishay

431
431

New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS Load Switch Battery Switch SO-8 S S 1 8 D S D 2 7 G S

1.44. si4431bd.pdf Size:224K _vishay

431
431

Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Available 0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 30 0.050 at VGS = - 4.5 V - 5.8 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BD

1.45. si4431cdy.pdf Size:271K _vishay

431
431

New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 • TrenchFET® Power MOSFET - 30 13 nC • 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS • Load Switch • Battery Switch SO-8 S S 1 8 D S

1.46. si4431dy.pdf Size:70K _vishay

431
431

Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% UIS Tested 0.040 @ VGS = 10 V "5.8 30 30 0.070 @ VGS = 4.5 V "4.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4431DY-T1 P-Channel MOSFET Si4431DY-T1E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA =

1.47. si4431ady.pdf Size:75K _vishay

431
431

Si4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.2 30 30 0.052 @ VGS = 4.5 V 5.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4431ADY-T1 P-Channel MOSFET Si4431ADY-T1E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OT

1.48. sib431ed.pdf Size:224K _vishay

431
431

1.49. si4310bd.pdf Size:226K _vishay

431
431

Si4310BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A) Definition 0.011 at VGS = 10 V 10 TrenchFET Power MOSFET Channel-1 0.016 at VGS = 4.5 V 8.2 100 % Rg Tested 30 Compliant to RoHS Directive 2002/95/EC 0.0085 at VGS = 10 V 14 Channel-2 0.0095

1.50. si1431dh.pdf Size:99K _vishay

431
431

Si1431DH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.200 at VGS = - 10 V - 2.0 • TrenchFET® Power MOSFET - 30 0.355 at VGS = - 4.5 V - 1.6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch - Notebook PC - Servers SOT-363 SC-70 (6-LEADS)

1.51. sia431dj.pdf Size:124K _vishay

431
431

1.52. 2n6430 2n6431 2n6432 2n6433.pdf Size:104K _central

431
431

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

1.53. zvn4310g.pdf Size:40K _diodes

431
431

SOT223 N-CHANNEL ENHANCEMENT ZVN4310G MODE VERTICAL DMOS FET ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS(ON) = .54? D APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive S PARTMARKING DETAIL - ZVN4310 D G ABSOLUTE MAXIMUM RATINGS. 00 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25C ID 1.67 A Pulsed Drain C

1.54. zvn4310astoa.pdf Size:41K _diodes

431
431

N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25°C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25°C P

1.55. zvn4310astz.pdf Size:41K _diodes

431
431

N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25°C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25°C P

1.56. zvn4310gtc.pdf Size:669K _diodes

431
431

A Product Line of Diodes Incorporated Green ZVN4310G 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data • V(BR)DSS > 100V • Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • RDS(on) ≤ 0.54Ω @ VGS = 10V UL Flammability Classification Rating 94V-0 • Maximum continuous drain current ID = 1.67A

1.57. zvn4310a.pdf Size:57K _diodes

431
431

N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5? * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25C Pulsed Dra

1.58. zvn4310gta.pdf Size:669K _diodes

431
431

A Product Line of Diodes Incorporated Green ZVN4310G 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data • V(BR)DSS > 100V • Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • RDS(on) ≤ 0.54Ω @ VGS = 10V UL Flammability Classification Rating 94V-0 • Maximum continuous drain current ID = 1.67A

1.59. zvn4310astob.pdf Size:41K _diodes

431
431

N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25°C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25°C P

1.60. 2sk2431.pdf Size:28K _hitachi

431
431

2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2431 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V

1.61. cv7431.pdf Size:10K _semelab

431

CV7431 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

1.62. cv7431-o.pdf Size:10K _semelab

431

CV7431-O Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, J

1.63. ssp7431p.pdf Size:558K _secos

431
431

SSP7431P -17A, -30V, RDS(ON) 13 m? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES ? Low RDS(on) provides h

1.64. 2sd1431.pdf Size:28K _wingshing

431

NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5

1.65. rt1p431c rt1p431m rt1p431s.pdf Size:156K _isahaya

431
431

 〈Transistor〉 RT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT:mm RT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.8 0.65 1.5 0.65 FEATURE ① ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). ② ③ APPLICATION ・Inverted circuit,s

1.66. sta431a.pdf Size:37K _sanken-ele

431
431

PNP + NPN H-bridge External dimensions STA (10-pin) STA431A D Absolute maximum ratings (Ta=25C) Ratings Symbol Unit NPN PNP VCBO 60 60 V VCEO 60 60 V VEBO 6 6V IC 3 3A ICP 6 (PW?10ms, Du?50%) 6 (PW?10ms, Du?50%) A 4 (Ta=25C) PT W 20 (Tc=25C) Tj 150 C Tstg 40 to +150 C Equivalent circuit diagram 10 6 8 7 9 3 5 24 1 Characteristic curves IC-VCE Characteris

1.67. 2sd1431.pdf Size:92K _inchange_semiconductor

431
431

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1431 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitte

1.68. 2sc4313.pdf Size:263K _inchange_semiconductor

431
431

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V V

1.69. 2sc1431.pdf Size:127K _inchange_semiconductor

431
431

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use in high frequency power amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

1.70. cem4311.pdf Size:387K _cet

431
431

CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18m? @VGS = -10V. RDS(ON) = 30m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise n

1.71. ced4311 ceu4311.pdf Size:401K _cet

431
431

CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18m? @VGS = -10V. RDS(ON) = 30m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RA

1.72. gm431.pdf Size:272K _gsme

431
431

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM431 DESCRIPTION&SYMBOL ¦DESCRIPTION&SYMBOL ????? DESCRIPTION&SYMBOL ?????????? 36 ????????? MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Cathode to Anode Voltage VKA 37 V ?

1.73. wtk9431.pdf Size:1067K _wietron

431
431

WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free -3.5 AMPERES DRAIN SOURCE VOLTAGE Features: -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * R <130m?@VGS = -4.5V DS(ON) * R <180m?@VGS = -2.5V DS(ON) * Simple Drive Requirement * Lower On-resistance 1 * Fast Switching SOP-8 Description: The WTK9431 provide the designer with t

1.74. ao4310.pdf Size:534K _aosemi

431
431

AO4310 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 27A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.1mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.2mΩ RDS(ON) and Crss.In addi

1.75. ao4314.pdf Size:570K _aosemi

431
431

AO4314 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 20A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 8.5mΩ RDS(ON) and Crss.In additi

1.76. ao4312.pdf Size:575K _aosemi

431
431

AO4312 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 23A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 4.5mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 6.2mΩ RDS(ON) and Crss.In addi

1.77. ap9431gh-hf.pdf Size:94K _a-power

431
431

AP9431GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS 55V Ў Simple Drive Requirement RDS(ON) 24m? Ў Fast Switching Characteristic ID 23.5A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, ? S TO-25

1.78. apm4431k.pdf Size:208K _anpec

431
431

APM4431K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-5.3A , RDS(ON)=32mΩ (typ.) @ VGS=-10V RDS(ON)=50mΩ (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 SOP-8 Package (1, 2, 3) S S S Lead Free Available (RoHS Compliant) Applications (4)G • Power Management in Notebook Computer, Portable Equipment and Batter

1.79. apm4317k.pdf Size:205K _anpec

431
431

APM4317K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-9A, D D RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, P

1.80. apm4315k.pdf Size:207K _anpec

431
431

APM4315K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-11A, D D RDS(ON)= 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, Port

1.81. sm4311pskp.pdf Size:294K _sino

431
431

SM4311PSKP ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-100A, D D RDS(ON) =2.8m (max.) @ VGS =-10V D D RDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and Rugged G Pin 1 S S Lead Free and Green Devices Available S DFN5x6-8 (RoHS Compliant) HBM ESD Capability level of 6.6KV typical ( 5,6,7,8 ) D D D D Note : The diode connected between the gate and sour

1.82. sm4310psk.pdf Size:262K _sino

431
431

SM4310PSK ® P-Channel Enhancement Mode MOSFET Features Pin Description D D D -30V/-9.3A, D RDS(ON) = 24m (max.) @ VGS =-10V RDS(ON) = 38m (max.) @ VGS =-4.5V S S Reliable and Rugged S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in Notebook Computer, Portable Equipment and Battery P

1.83. 2sc4317.pdf Size:1814K _kexin

431
431

SMD Type Transistors NPN Transistors 2SC4317 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=40mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

1.84. ao4310.pdf Size:2160K _kexin

431
431

SMD Type MOSFET N-Channel MOSFET AO4310 (KO4310) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 27 A (VGS = 10V) ● RDS(ON) < 3.1mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.85. ao4314.pdf Size:2238K _kexin

431
431

SMD Type MOSFET N-Channel MOSFET AO4314 (KO4314) SOP-8 ■ Features ● VDS (V) = 36V 1.50 0.15 ● ID = 20 A (VGS = 10V) ● RDS(ON) < 6mΩ (VGS = 10V) ● RDS(ON) < 8.5mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.86. ao4312.pdf Size:2238K _kexin

431
431

SMD Type MOSFET N-Channel MOSFET AO4312 (KO4312) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 23 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.5mΩ (VGS = 10V) ● RDS(ON) < 6.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

Otros transistores... 41501 , 41502 , 41503 , 41504 , 41505 , 41506 , 41508 , 423 , BC548B , 43104 , 45190 , 45191 , 45192 , 45193 , 45194 , 45195 , 4NU72 .

Back to Top

 


431
  431
  431
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |


Introduzca al menos 1 números o letras

 

Back to Top