431 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 96190IRFB4310GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

PD - 97123AIRFP4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)134A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dt

PD - 96324AUTOMOTIVE GRADEAUIRFS4310AUIRFSL4310FeaturesHEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSSl Ultra Low On-Resistance 100VDl 175C Operating TemperatureRDS(on) typ.5.6ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxmax. 7.0mGl Lead-Free, RoHS CompliantID (Silicon Limited) 130A l Automotive Qualified *SID (Package L

PD - 94445IRFL4315SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters150V 185m@VGS = 10V 2.6ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223 Fully Characterized Avalanche Voltagean

PD - 91368BIRFL4310HEXFET Power MOSFETDVDSS = 100Vl Surface Mountl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.20Wl Ease of ParallelingGl Advanced Process Technologyl Ultra Low On-ResistanceID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon ar

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom

2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 V

MCH6431Ordering number : ENA1852SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6431ApplicationsFeatures ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour

Ordering number:EN3569N-Channel Silicon MOSFET2SK1431Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2063A Converters.[2SK1431] Micaless package facilitating easy mounting. 4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

SFT1431Ordering number : ENA1624SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1431ApplicationsFeatures Motor drive application. Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20

Preliminary Datasheet R07DS0431EJ03002SC1213, 2SC1213A (Previous: REJ03G0684-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

FJN4312RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJN3312RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitCSymbol Parameter Value UnitsVCBO Collector-

FJN4310RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJN3310RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitCSymbol Parameter Value UnitsVCBO Collector-

FJN4313RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJN3313RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVCB

January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel

FJN4311RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJN3311RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCVCBO Collector-

FJA4313Audio Power Amplifier High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213TO-3P11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base

FJAF4310Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210TO-3PF11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 140 VVEBO Emitter-Base

FJN4314RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJN3314RTO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVC

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistance and

October 2008FJA4310NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 140 V

January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle

February 2010tmFDS9431A_F085P-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistan

FJL4315Audio Power Amplifier High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215TO-26411.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base

DATA SHEETNPN SILICON RF TRANSISTOR2SC5431NPN EPITAXIAL SILICON TRANSISTORFOR UHF TUNER OSC/MIXFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5431 50 pcs (Non reel) 8 mm wide embossed taping2SC5431-T1 3 kpcs/reel

New ProductSiA431DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK0.025 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area0.031 at VGS = - 2.5 V - 12a- Low On-Resistance- 20 24 nC0.041 at VGS = - 1.8 V - 12a 100 % Rg Tested0

U430/431Vishay SiliconixMatched N-Channel PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Typ (mV)U430 1 to 4 25 10 15 25U431 2 to 6 25 10 15 25FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed,

Si1431DHVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 10 V - 2.0 TrenchFET Power MOSFET - 300.355 at VGS = - 4.5 V - 1.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch- Notebook PC- ServersSOT-363SC-70 (6-LEADS)

Si4310BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.011 at VGS = 10 V 10 TrenchFET Power MOSFETChannel-10.016 at VGS = 4.5 V 8.2 100 % Rg Tested30 Compliant to RoHS Directive 2002/95/EC0.0085 at VGS = 10 V 14Chann

SQJ431EPwww.vishay.comVishay SiliconixAutomotive P-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200DefinitionRDS(on) () at VGS = - 10 V 0.213 TrenchFET Power MOSFETRDS(on) () at VGS = - 6 V 0.221 AEC-Q101 QualifieddID (A) - 12 100 % Rg and UIS TestedConfiguration Single Complian

Si4431ADYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 10 V7.230300.052 @ VGS = 4.5 V 5.5SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4431ADY-T1P-Channel MOSFETSi4431ADY-T1E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS (TA

Si4431DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% UIS Tested0.040 @ VGS = 10 V "5.830300.070 @ VGS = 4.5 V "4.5SSO-8SD1 8GS D2 7SD3 6G D4 5Top ViewDOrdering Information: Si4431DY-T1P-Channel MOSFETSi4431DY-T1E3 (Lead (Pb)-Free)ABSOLUTE MAXIMUM RAT

Si4431BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 300.050 at VGS = - 4.5 V - 5.8SO-8 S 1 8 D SS D 2 7 S 3 6 DGG D 4 5 Top View DOrdering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)

New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS

SQ4431EYwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 100 % Rg and UIS TestedRDS(on) () at VGS = - 10 V 0.030 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.052 Material categorization: ID (A) - 10.8For definitions of compliance please see Configuration

New ProductSiB431EDKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f, g Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 9 TrenchFET Power MOSFET- 20 3.9 nC0.149 at VGS = - 2.5 V - 1.2 New Thermally Enhanced PowerPAKSC-75 Package- Small Footprint Area Typical E

New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS

SQ1431EHwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.175 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.300 AEC-Q101 QualifiedcID (A) - 3 100 % Rg and UIS TestedConfiguration Single Compliant

Si4431BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 300.050 at VGS = - 4.5 V - 5.8SO-8 S 1 8 D SS D 2 7 S 3 6 DGG D 4 5 Top View DOrdering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)

Si7431DPVishay SiliconixP-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.174 at VGS = - 10 V - 3.8 TrenchFET Power MOSFETs- 200 880.180 at VGS = - 6 V - 3.6 Ultra-Low On-Resistance Critical for Application Low Thermal Resistance PowerPAK Package with Lo

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

N-CHANNEL ENHANCEMENTZVN4310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES. * 100 Volt VDS* RDS(on) = 0.5* Spice model availableD1MHz G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VID=3AContinuous Drain Current at Tamb=25C ID 0.9 APractical Continuous Drain Current at IDP 1ATamb=25CP

N-CHANNEL ENHANCEMENTZVN4310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES. * 100 Volt VDS* RDS(on) = 0.5* Spice model availableD1MHz G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VID=3AContinuous Drain Current at Tamb=25C ID 0.9 APractical Continuous Drain Current at IDP 1ATamb=25CP

A Product Line ofDiodes IncorporatedGreenZVN4310G100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data V(BR)DSS > 100V Case: SOT223 Case Material: Molded Plastic, Green Molding Compound. RDS(on) 0.54 @ VGS = 10V UL Flammability Classification Rating 94V-0 Maximum continuous drain current ID = 1.67A

SOT223 N-CHANNEL ENHANCEMENTZVN4310GMODE VERTICAL DMOS FETISSUE 3 - FEBRUARY 1996FEATURES* Very low RDS(ON) = .54DAPPLICATIONS* DC - DC Converters* Solenoids/Relay Drivers for AutomotiveSPARTMARKING DETAIL - ZVN4310 DGABSOLUTE MAXIMUM RATINGS.00PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 1.67 APulsed D

AUTOMOTIVE GRADE AUIRFS4310Z HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 127A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS

AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au

NTMFS5H431NLMOSFET Power, Single,N-Channel40 V, 3.3 mW, 106 AFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX3.3 mW @ 10 V40 VMAXIMUM RATINGS (TJ = 25C unless otherwise

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 VThis P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V.using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current Capability: IC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

2SK2431Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2431Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

CV7431-ODimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, J

CV7431Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019)0.41 (0.016)dia.IC = 0.1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) pro

TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A

NPN TRIPLE DIFFUSED2SD1431 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

RT5N431C Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5N431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor, PNP type is RT5P431C. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 2High collector current Ic=0.5A Mini package for easy mounting

TransistorRT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,swit

RT5P431C Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 2High collector current Ic=-0.5A Mini package for easy mounting APPLICATION Inve

RT5P431S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 20.1 High collector current Ic=-0.5A 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ

TransistorRT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNITmmRT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.80.65 1.5 0.65FEATURE Built-in bias resistor (R1=4.7k,R2=4.7k). APPLICATION Inverted circuit,s

PNP + NPNH-bridge External dimensions STA (10-pin)STA431ADAbsolute maximum ratings (Ta=25C)RatingsSymbol UnitNPN PNPVCBO 60 60 VVCEO 60 60 VVEBO 6 6VIC 3 3AICP 6 (PW10ms, Du50%) 6 (PW10ms, Du50%) A4 (Ta=25C)PT W20 (Tc=25C)Tj 150 CTstg 40 to +150 C Equivalent circuit diagram106 87 93 5241Charact

CED4311/CEU4311P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -33A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAX

CEM4311P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM431DESCRIPTION&SYMBOLDESCRIPTION&SYMBOL DESCRIPTION&SYMBOL 36 MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGS

WTK9431Surface Mount P-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free-3.5 AMPERESDRAIN SOURCE VOLTAGEFeatures:-20 VOLTAGE* Super high dense* Cell design for low RDS(ON)* R

AO431436V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4314 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 20Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

AO431236V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4312 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 23Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

AO431036V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4310 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 27Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

AONS7431230V N-Channel MOSFET General Description Product SummaryVDS 30V Trench Power MOSFET technology Very Low RDS(on) ID (at VGS=10V) 210A Low Gate Charge RDS(ON) (at VGS=10V)

AP9431GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 55V Simple Drive Requirement RDS(ON) 24m Fast Switching Characteristic ID 23.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

Analog Power AM7431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -17converters and power management in portable and -3019 @ VGS = -4.5V -14batte

Analog Power AM4431PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)5 @ VGS = -10V -21 Low thermal impedance -307 @ VGS = -4.5V -17 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

Analog Power AMCC431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -10V -5.9converters and power management in portable and -3090 @ VGS = -4.5V -4.8b

Analog Power AM3431PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)24 @ VGS = -10V -7.5 Low thermal impedance -3036 @ VGS = -4.5V -6.1 Fast switching speed Typical Applications: TSOP-6 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

Analog Power AM1431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1converters and power management in portable and -30battery-powered product

APM4315K P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-11A,DDRDS(ON)= 11m (typ.) @ VGS=-10VRDS(ON)= 20m (typ.) @ VGS=-4.5VSS Super High Dense Cell DesignSG Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant)( 1, 2, 3 )S S SApplications(4)G Power Management in Notebook Computer,Port

APM4317KP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-9A,DDRDS(ON) = 16m(typ.) @ VGS = -10VRDS(ON) = 24m(typ.) @ VGS = -4.5VSS Super High Dense Cell DesignSG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 1, 2, 3 )S S SApplications(4)G Power Management in Notebook Computer,P

APM4431K P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-5.3A ,RDS(ON)=32m (typ.) @ VGS=-10VRDS(ON)=50m (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 SOP-8 Package(1, 2, 3)S S S Lead Free Available (RoHS Compliant)Applications(4)G Power Management in Notebook Computer, Portable Equipment and Batter

SM4310PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD -30V/-9.3A,DRDS(ON) = 24m (max.) @ VGS =-10VRDS(ON) = 38m (max.) @ VGS =-4.5VSS Reliable and Rugged SG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery P

SM4311PSKP P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-100A,DDRDS(ON) =2.8m (max.) @ VGS =-10V DDRDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and RuggedGPin 1SS Lead Free and Green Devices Available SDFN5x6-8(RoHS Compliant) HBM ESD Capability level of 6.6KV typical( 5,6,7,8 )D D D DNote : The diode connected between the gate andsour

SMD Type MOSFETN-Channel MOSFETAO4314 (KO4314)SOP-8 Features VDS (V) = 36V1.50 0.15 ID = 20 A (VGS = 10V) RDS(ON) 6m (VGS = 10V) RDS(ON) 8.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

SMD Type MOSFETN-Channel MOSFETAO4312 (KO4312)SOP-8 Features VDS (V) = 36V ID = 23 A (VGS = 10V)1.50 0.15 RDS(ON) 4.5m (VGS = 10V) RDS(ON) 6.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

SMD Type MOSFETN-Channel MOSFETAO4310 (KO4310)SOP-8 Features VDS (V) = 36V ID = 27 A (VGS = 10V) RDS(ON) 3.1m (VGS = 10V)1.50 0.15 RDS(ON) 4.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 SourceDD8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

SMD Type TransistorsNPN Transistors2SC4317SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=40mA1 2 Collector Emitter Voltage VCEO=10V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm)Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A

CHENMKO ENTERPRISE CO.,LTDCHM4311PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40)* High power and

CHENMKO ENTERPRISE CO.,LTDCHM4431JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

CHENMKO ENTERPRISE CO.,LTDCHM4311JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

RoHS WEJ431 WEJ431 Adjustable Accurate Reference Source SOT-89 FEATURES The output voltage can be adjusted to 36V 1. REFERENCE Low dynamic output impedance, its typical value is 0.2 Trapping current capability is 1 to 100mA 1 2. ANODE The typical value of the equivalent temperature factor in the 2 whole temperature scope is 50 ppm/ 3 3. CATHODE The effec

HSM4313 Dual P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4313 is the high cell density trenched P-V -40 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 45 m DS(ON),maxconverter applications. I -6.5 A DThe HSM4313 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

VBA4317www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1

SI4431CDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S

IRFL4310TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PA

VBA4311www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) (), ID (A)d, e Qg (Typ.)Typ. TrenchFET Power MOSFET0.011 at VGS = - 10 V - 12 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.013 at VGS = - 4.5 V - 10APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-8S1 1 D1

CEM4311www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

HM4310 100VDS25VGS140A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=100VVGSS=25VID=140A RDS(ON)=7.2m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter SystemSwitching Time Test Cir

isc N-Channel MOSFET Transistor 2SK3431-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

isc Silic\on PNP Darlington Power Transistor 2SB1431DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -3A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A, I = -3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc N-Channel MOSFET Transistor 2SK2431DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310 IIRFB4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

isc N-Channel MOSFET Transistor 2SK3431FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1431DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310ZFEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

isc N-Channel MOSFET Transistor 2SK3431-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc Silicon NPN Power Transistor 2SD1431DESCRIPTIONHigh Speedt = 1.0 us(MIN) @ I = 4A , I = 0.8Af C B(end)High VoltageV =1300VCBOLow Saturation VoltageV

Isc N-Channel MOSFET Transistor IRFS4310ZFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor MJ431DESCRIPTIONCollector-Emitter Voltage-: V = 400V(Min)CEXDC Current Gain-: h = 15-35@ I = 2.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium-to-high-voltage inverters, converters,regulators and switching circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4310ZIIRFP4310ZFEATURESStatic drain-source on-resistance:RDS(on)6.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUnin

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310ZPBFFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4313DESCRIPTIONCollector-Emitter Sustaining Voltage- :VCEO(SUS)= 800V(Min)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base