Справочник транзисторов. 431

 

Биполярный транзистор 431 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 431

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 125 W

Макcимально допустимое напряжение коллектор-база (Ucb): 400 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 325 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 7 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 4 MHz

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO3

Аналоги (замена) для 431

 

 

431 Datasheet (PDF)

1.1. wej431.pdf Size:129K _upd

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RoHS WEJ431 WEJ431 Adjustable Accurate Reference Source SOT-89 FEATURES The output voltage can be adjusted to 36V 1. REFERENCE Low dynamic output impedance, its typical value is 0.2Ω Trapping current capability is 1 to 100mA 1 2. ANODE The typical value of the equivalent temperature factor in the 2 whole temperature scope is 50 ppm/ 3 3. CATHODE The effec

1.2. rt5n431c.pdf Size:130K _upd

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 RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5N431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor, PNP type is RT5P431C. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=0.5A) ② ③ Mini package for easy mounting

 1.3. irfs4310zpbf.pdf Size:324K _upd

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PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

1.4. irfsl4310zpbf.pdf Size:324K _upd

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PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 1.5. rt5p431c.pdf Size:146K _upd

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 RT5P431C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=-0.5A) ② ③ Mini package for easy mounting APPLICATION Inve

1.6. irfsl4310pbf.pdf Size:376K _upd

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PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

1.7. irfs4310pbf.pdf Size:376K _upd

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PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

1.8. irf430 irf431 irf432 irf433.pdf Size:211K _upd

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1.9. rt5p431s.pdf Size:146K _upd

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 RT5P431S Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 0.1 High collector current (Ic=-0.5A) 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ

1.10. am1431p.pdf Size:135K _upd-mosfet

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Analog Power AM1431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product

1.11. am4431p.pdf Size:322K _upd-mosfet

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Analog Power AM4431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 5 @ VGS = -10V -21 • Low thermal impedance -30 7 @ VGS = -4.5V -17 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

1.12. am3431p.pdf Size:315K _upd-mosfet

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Analog Power AM3431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 24 @ VGS = -10V -7.5 • Low thermal impedance -30 36 @ VGS = -4.5V -6.1 • Fast switching speed Typical Applications: TSOP-6 • Load Switches • DC/DC Conversion • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS

1.13. irfb4310zpbf.pdf Size:324K _upd-mosfet

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PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

1.14. am7431p.pdf Size:186K _upd-mosfet

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Analog Power AM7431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω)ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -17 converters and power management in portable and -30 19 @ VGS = -4.5V -14 batte

1.15. irfb4310pbf.pdf Size:376K _upd-mosfet

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PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

1.16. irfb4310zgpbf.pdf Size:291K _upd-mosfet

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PD - 96189 IRFB4310ZGPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

1.17. irfp4310zpbf.pdf Size:299K _upd-mosfet

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PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

1.18. sia431dj.pdf Size:216K _upd-mosfet

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New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • New Thermally Enhanced PowerPAK® 0.025 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area 0.031 at VGS = - 2.5 V - 12a - Low On-Resistance - 20 24 nC 0.041 at VGS = - 1.8 V - 12a • 100 % Rg Tested 0

1.19. irfb4310gpbf.pdf Size:285K _upd-mosfet

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PD - 96190 IRFB4310GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

1.20. rt1n431c rt1n431m rt1n431s rt1n431u.pdf Size:153K _update

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 〈Transistor〉 RT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT:mm RT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.8 0.65 1.5 0.65 FEATURE ① ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). ② ③ APPLICATION Inverted circuit,swit

1.21. sq4431ey.pdf Size:110K _update

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SQ4431EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) - 30 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 10 V 0.030 • AEC-Q101 Qualifiedc RDS(on) () at VGS = - 4.5 V 0.052 • Material categorization:  ID (A) - 10.8 For definitions of compliance please see Configuration

1.22. sqj431ep.pdf Size:155K _update

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SQJ431EP www.vishay.com Vishay Siliconix Automotive P-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 200 Definition RDS(on) () at VGS = - 10 V 0.213 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 6 V 0.221 • AEC-Q101 Qualifiedd ID (A) - 12 • 100 % Rg and UIS Tested Configuration Single • Complian

1.23. sq1431eh.pdf Size:169K _update

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SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) () at VGS = - 10 V 0.175 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 4.5 V 0.300 • AEC-Q101 Qualifiedc ID (A) - 3 • 100 % Rg and UIS Tested Configuration Single • Compliant

1.24. 2sk3431-s-z-zj.pdf Size:206K _update

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.25. amcc431p.pdf Size:104K _update-mosfet

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Analog Power AMCC431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -10V -5.9 converters and power management in portable and -30 90 @ VGS = -4.5V -4.8 b

1.26. chm4431jgp.pdf Size:70K _update_mosfet

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CHENMKO ENTERPRISE CO.,LTD CHM4431JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

1.27. pja3431.pdf Size:227K _update_mosfet

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PPJA3431 20V P-Channel Enhancement Mode MOSFET – ESD Protected SOT-23 Unit: inch(mm) Voltage -20 V Current -1.5A Features  RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 

1.28. chm4311jgp.pdf Size:68K _update_mosfet

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CHENMKO ENTERPRISE CO.,LTD CHM4311JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

1.29. tsm4431cs.pdf Size:489K _update_mosfet

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TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(mΩ) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● DC-DC Conversion ● A

1.30. chm4311pagp.pdf Size:163K _update_mosfet

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CHENMKO ENTERPRISE CO.,LTD CHM4311PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) * High power and

1.31. 2n431 2n432.pdf Size:297K _general_electric

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1.32. 2sc4317.pdf Size:467K _toshiba

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2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

1.33. 2sc4315.pdf Size:463K _toshiba

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2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C

1.34. 2sa1431.pdf Size:181K _toshiba

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1.35. sft1431.pdf Size:492K _sanyo

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SFT1431 Ordering number : ENA1624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1431 Applications Features • Motor drive application. • Low ON-resistance. • 4V drive. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20

1.36. 2sk1431.pdf Size:104K _sanyo

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Ordering number:EN3569 N-Channel Silicon MOSFET 2SK1431 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-state resistance. unit:mm · Ultrahigh-speed switching. 2063A · Converters. [2SK1431] · Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO

1.37. mch6431.pdf Size:362K _sanyo

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MCH6431 Ordering number : ENA1852 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6431 Applications Features • ON-resistance RDS(on)1=42m (typ.) Ω • 4V drive • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sour

1.38. r07ds0431ej 2sc1213a-1.pdf Size:170K _renesas

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 Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item S

1.39. 2sk3431-s-z-zj.pdf Size:206K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.40. fjaf4310.pdf Size:87K _fairchild_semi

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FJAF4310 Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base

1.41. fjn4314r.pdf Size:27K _fairchild_semi

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FJN4314R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ) • Complement to FJN3314R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC

1.42. fjn4313r.pdf Size:27K _fairchild_semi

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FJN4313R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to FJN3313R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCB

1.43. fjl4315.pdf Size:64K _fairchild_semi

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FJL4315 Audio Power Amplifier • High Current Capability : IC=15A • High Power Dissipation • Wide S.O.A • Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base

1.44. fjn4311r.pdf Size:26K _fairchild_semi

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FJN4311R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJN3311R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-

1.45. 2sc5242 fja4313.pdf Size:468K _fairchild_semi

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January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A TO-3P 1 • High Power Dissipation : 130watts 1.Base 2.Collector 3.Emitter • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excelle

1.46. 2sc5200 fjl4315.pdf Size:476K _fairchild_semi

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January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. TO-264 1 • High Power Dissipation : 150watts. • High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excel

1.47. fjn4310r.pdf Size:32K _fairchild_semi

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FJN4310R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to FJN3310R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-

1.48. fjn4312r.pdf Size:26K _fairchild_semi

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FJN4312R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=47KΩ) • Complement to FJN3312R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-

1.49. fds9431a.pdf Size:75K _fairchild_semi

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September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 Ω @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and

1.50. fds9431a f085.pdf Size:358K _fairchild_semi

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February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced • -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 Ω @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistan

1.51. fja4310.pdf Size:199K _fairchild_semi

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October 2008 FJA4310 NPN Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V

1.52. fja4313.pdf Size:83K _fairchild_semi

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FJA4313 Audio Power Amplifier • High Current Capability : IC=15A • High Power Dissipation • Wide S.O.A • Complement to FJA4213 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base

1.53. irfl4315pbf.pdf Size:197K _international_rectifier

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PD - 95258A IRFL4315PbF HEXFET® Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 150V 185mW@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 l Fully Characterized Avalanche Voltage and Current l Lead-Free Abs

1.54. irfl4310.pdf Size:313K _international_rectifier

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PD - 91368B IRFL4310 HEXFET® Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar

1.55. irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf Size:324K _international_rectifier

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PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

1.56. auirfs4310trl.pdf Size:334K _international_rectifier

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PD - 96324 AUTOMOTIVE GRADE AUIRFS4310 AUIRFSL4310 Features HEXFET® Power MOSFET l Advanced Process Technology V(BR)DSS l Ultra Low On-Resistance 100V D l 175°C Operating Temperature RDS(on) typ. 5.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 7.0mΩ G l Lead-Free, RoHS Compliant ID (Silicon Limited) 130A l Automotive Qualified * S ID (Package L

1.57. irfl4315.pdf Size:121K _international_rectifier

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PD - 94445 IRFL4315 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters Ω 150V 185mΩ Ω@VGS = 10V 2.6A Ω Ω Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage an

1.58. irfb4310zgpbf.pdf Size:291K _international_rectifier

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PD - 96189 IRFB4310ZGPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

1.59. irfp4310zpbf.pdf Size:299K _international_rectifier

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PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

1.60. irfb4310pbf irfs4310pbf irfsl4310pbf.pdf Size:376K _international_rectifier

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PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

1.61. irfl4310pbf.pdf Size:659K _international_rectifier

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PD - 95144 IRFL4310PbF HEXFET® Power MOSFET D Surface Mount VDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of Paralleling RDS(on) = 0.20Ω Advanced Process Technology G Ultra Low On-Resistance ID = 1.6A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

1.62. irfb4310gpbf.pdf Size:285K _international_rectifier

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PD - 96190 IRFB4310GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

1.63. 2sc5431.pdf Size:51K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5004 • Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel

1.64. irf430 irf431 irf432 irf433.pdf Size:211K _samsung

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1.65. u430 u431.pdf Size:60K _vishay

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U430/431 Vishay Siliconix Matched N-Channel Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV) U430 –1 to –4 –25 10 –15 25 U431 –2 to –6 –25 10 –15 25 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed,

1.66. si4431dy.pdf Size:70K _vishay

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Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% UIS Tested 0.040 @ VGS = –10 V "5.8 –30 30 0.070 @ VGS = –4.5 V "4.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4431DY-T1 P-Channel MOSFET Si4431DY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RAT

1.67. si1431dh.pdf Size:99K _vishay

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Si1431DH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.200 at VGS = - 10 V - 2.0 • TrenchFET® Power MOSFET - 30 0.355 at VGS = - 4.5 V - 1.6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch - Notebook PC - Servers SOT-363 SC-70 (6-LEADS)

1.68. si4431cdy.pdf Size:271K _vishay

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New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 • TrenchFET® Power MOSFET - 30 13 nC • 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS • Load Switch • Battery Switch SO-8 S S 1 8 D S

1.69. si4431ady.pdf Size:75K _vishay

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Si4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V –7.2 –30 –30 0.052 @ VGS = –4.5 V –5.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4431ADY-T1 P-Channel MOSFET Si4431ADY-T1—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA

1.70. sq4431ey.pdf Size:110K _vishay

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SQ4431EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) - 30 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 10 V 0.030 • AEC-Q101 Qualifiedc RDS(on) () at VGS = - 4.5 V 0.052 • Material categorization:  ID (A) - 10.8 For definitions of compliance please see Configuration

1.71. si4310bd.pdf Size:226K _vishay

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Si4310BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A) Definition 0.011 at VGS = 10 V 10 • TrenchFET® Power MOSFET Channel-1 0.016 at VGS = 4.5 V 8.2 • 100 % Rg Tested 30 • Compliant to RoHS Directive 2002/95/EC 0.0085 at VGS = 10 V 14 Chann

1.72. sqj431ep.pdf Size:155K _vishay

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SQJ431EP www.vishay.com Vishay Siliconix Automotive P-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 200 Definition RDS(on) () at VGS = - 10 V 0.213 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 6 V 0.221 • AEC-Q101 Qualifiedd ID (A) - 12 • 100 % Rg and UIS Tested Configuration Single • Complian

1.73. sq1431eh.pdf Size:169K _vishay

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SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) () at VGS = - 10 V 0.175 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 4.5 V 0.300 • AEC-Q101 Qualifiedc ID (A) - 3 • 100 % Rg and UIS Tested Configuration Single • Compliant

1.74. si4431bd.pdf Size:224K _vishay

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Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Available 0.030 at VGS = - 10 V - 7.5 • TrenchFET® Power MOSFETs - 30 0.050 at VGS = - 4.5 V - 5.8 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free)

1.75. sib431ed.pdf Size:224K _vishay

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New Product SiB431EDK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)f, g Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 9 • TrenchFET® Power MOSFET - 20 3.9 nC 0.149 at VGS = - 2.5 V - 1.2 • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area • Typical E

1.76. si4431cd.pdf Size:269K _vishay

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New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 • TrenchFET® Power MOSFET - 30 13 nC • 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS • Load Switch • Battery Switch SO-8 S S 1 8 D S

1.77. sia431dj.pdf Size:216K _vishay

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New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • New Thermally Enhanced PowerPAK® 0.025 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area 0.031 at VGS = - 2.5 V - 12a - Low On-Resistance - 20 24 nC 0.041 at VGS = - 1.8 V - 12a • 100 % Rg Tested 0

1.78. si7431dp.pdf Size:493K _vishay

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Si7431DP Vishay Siliconix P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition 0.174 at VGS = - 10 V - 3.8 • TrenchFET® Power MOSFETs - 200 88 0.180 at VGS = - 6 V - 3.6 • Ultra-Low On-Resistance Critical for Application • Low Thermal Resistance PowerPAK® Package with Lo

1.79. 2n6430 2n6431 2n6432 2n6433.pdf Size:104K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

1.80. zvn4310gta zvn4310gtc.pdf Size:669K _diodes

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A Product Line of Diodes Incorporated Green ZVN4310G 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data • V(BR)DSS > 100V • Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • RDS(on) ≤ 0.54Ω @ VGS = 10V UL Flammability Classification Rating 94V-0 • Maximum continuous drain current ID = 1.67A

1.81. zvn4310a.pdf Size:57K _diodes

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N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25°C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25°C P

1.82. zvn4310astoa zvn4310astob zvn4310astz.pdf Size:41K _diodes

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N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25°C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25°C P

1.83. zvn4310g.pdf Size:40K _diodes

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SOT223 N-CHANNEL ENHANCEMENT ZVN4310G MODE VERTICAL DMOS FET ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS(ON) = .54Ω D APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive S PARTMARKING DETAIL - ZVN4310 D G ABSOLUTE MAXIMUM RATINGS. 00 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 1.67 A Pulsed D

1.84. 2sk2431.pdf Size:28K _hitachi

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2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2431 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to so

1.85. cv7431.pdf Size:10K _semelab

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CV7431 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

1.86. cv7431-o.pdf Size:10K _semelab

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CV7431-O Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, J

1.87. ssp7431p.pdf Size:558K _secos

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SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES  Low RDS(on) pro

1.88. tsm4431cs.pdf Size:489K _taiwansemi

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TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(mΩ) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● DC-DC Conversion ● A

1.89. 2sd1431.pdf Size:28K _wingshing

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NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

1.90. rt5n431c.pdf Size:130K _isahaya

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 RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5N431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor, PNP type is RT5P431C. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=0.5A) ② ③ Mini package for easy mounting

1.91. rt1n431c rt1n431m rt1n431s rt1n431u.pdf Size:153K _isahaya

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 〈Transistor〉 RT1N431X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT:mm RT1N431X is a one chip transistor RT1N431C with built-in bias resistor,PNP type is RT1P431X. 2.8 0.65 1.5 0.65 FEATURE ① ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). ② ③ APPLICATION Inverted circuit,swit

1.92. rt5p431c.pdf Size:146K _isahaya

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 RT5P431C Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=-0.5A) ② ③ Mini package for easy mounting APPLICATION Inve

1.93. rt5p431s.pdf Size:146K _isahaya

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 RT5P431S Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 0.1 High collector current (Ic=-0.5A) 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ

1.94. rt1p431c rt1p431m rt1p431s.pdf Size:156K _isahaya

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 〈Transistor〉 RT1P431X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DRAWING DESCRIPTION UNIT:mm RT1P431X is a one chip transistor RT1P431C with built-in bias resistor,NPN type is RT1N431X. 2.8 0.65 1.5 0.65 FEATURE ① ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). ② ③ APPLICATION ・Inverted circuit,s

1.95. sta431a.pdf Size:37K _sanken-ele

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PNP + NPN H-bridge External dimensions • • • STA (10-pin) STA431A D Absolute maximum ratings (Ta=25°C) Ratings Symbol Unit NPN PNP VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6V IC 3 –3A ICP 6 (PW≤10ms, Du≤50%) –6 (PW≤10ms, Du≤50%) A 4 (Ta=25°C) PT W 20 (Tc=25°C) Tj 150 °C Tstg –40 to +150 °C Equivalent circuit diagram 10 6 8 7 9 3 5 24 1 Charact

1.96. irfb4310z.pdf Size:251K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310Z, IIRFB4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXI

1.97. irfp4310z.pdf Size:244K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z, IIRFP4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Unin

1.98. 2sc4313.pdf Size:211K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

1.99. mj431.pdf Size:205K _inchange_semiconductor

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isc Silicon NPN Power Transistor MJ431 DESCRIPTION ·Collector-Emitter Voltage- : V = 400V(Min) CEX ·DC Current Gain- : h = 15-35@ I = 2.5A FE C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium-to-high-voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

1.100. 2sd1431.pdf Size:215K _inchange_semiconductor

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isc Silicon NPN Power Transistor 2SD1431 DESCRIPTION ·High Speed t = 1.0 us(MIN) @ I = 4A , I = 0.8A f C B(end) ·High Voltage V =1300V CBO ·Low Saturation Voltage V <5.0V@ I = 4A; I = 0.8A CE(sat) C B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS

1.101. irfb4310zpbf.pdf Size:206K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310ZPBF ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

1.102. 2sc1431.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

1.103. irfs4310z.pdf Size:258K _inchange_semiconductor

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Isc N-Channel MOSFET Transistor IRFS4310Z ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.104. 2sk2431.pdf Size:213K _inchange_semiconductor

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isc N-Channel MOSFET Transistor 2SK2431 DESCRIPTION ·Drain Current I = 3A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Dr

1.105. irfb4310.pdf Size:245K _inchange_semiconductor

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4310, IIRFB4310 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMU

1.106. 2sb1431.pdf Size:237K _inchange_semiconductor

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isc Silic\on PNP Darlington Power Transistor 2SB1431 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = -100V(Min) (BR)CEO ·High DC Current Gain- : h = 2000(Min)@ (V = -2V, I = -3A) FE CE C ·Low Collector Saturation Voltage- : V = -1.5V(Max)@ (I = -3A, I = -3mA) CE(sat) C B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·

1.107. cem4311.pdf Size:387K _cet

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CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless othe

1.108. ced4311 ceu4311.pdf Size:401K _cet

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CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAX

1.109. gm431.pdf Size:272K _gsme

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桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM431 DESCRIPTION&SYMBOL ■DESCRIPTION&SYMBOL 功能和符號 DESCRIPTION&SYMBOL 輸出電壓从基准電壓到 36 伏可调的穩壓二極管 MAXIMUM RATINGS ■MAXIMUM RATINGS 最大額定值 MAXIMUM RATINGS

1.110. wtk9431.pdf Size:1067K _wietron

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WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free -3.5 AMPERES DRAIN SOURCE VOLTAGE Features: -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * R <130mΩ@VGS = -4.5V DS(ON) * R <180mΩ@VGS = -2.5V DS(ON) * Simple Drive Requirement * Lower On-resistance 1 * Fast Switching SOP-8 Description: The WTK9431 provide the designer w

1.111. ao4312.pdf Size:575K _aosemi

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AO4312 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 23A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 4.5mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 6.2mΩ RDS(ON) and Crss.In addi

1.112. ao4314.pdf Size:570K _aosemi

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AO4314 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 20A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 8.5mΩ RDS(ON) and Crss.In additi

1.113. ao4310.pdf Size:534K _aosemi

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AO4310 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 27A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.1mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.2mΩ RDS(ON) and Crss.In addi

1.114. ap9431gh-hf.pdf Size:94K _ape

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AP9431GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS 55V ▼ Simple Drive Requirement RDS(ON) 24mΩ ▼ Fast Switching Characteristic ID 23.5A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, □

1.115. am1431p.pdf Size:135K _analog_power

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Analog Power AM1431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product

1.116. am4431p.pdf Size:322K _analog_power

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Analog Power AM4431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID(A) • Low r trench technology DS(on) 5 @ VGS = -10V -21 • Low thermal impedance -30 7 @ VGS = -4.5V -17 • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

1.117. am3431p.pdf Size:315K _analog_power

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Analog Power AM3431P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features: rDS(on) (mΩ) VDS (V) ID (A) • Low r trench technology DS(on) 24 @ VGS = -10V -7.5 • Low thermal impedance -30 36 @ VGS = -4.5V -6.1 • Fast switching speed Typical Applications: TSOP-6 • Load Switches • DC/DC Conversion • Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS

1.118. amcc431p.pdf Size:104K _analog_power

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Analog Power AMCC431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -10V -5.9 converters and power management in portable and -30 90 @ VGS = -4.5V -4.8 b

1.119. am7431p.pdf Size:186K _analog_power

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Analog Power AM7431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m(Ω)ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -17 converters and power management in portable and -30 19 @ VGS = -4.5V -14 batte

1.120. apm4315k.pdf Size:207K _anpec

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APM4315K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-11A, D D RDS(ON)= 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, Port

1.121. apm4317k.pdf Size:205K _anpec

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APM4317K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-9A, D D RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, P

1.122. apm4431k.pdf Size:208K _anpec

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APM4431K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-5.3A , RDS(ON)=32mΩ (typ.) @ VGS=-10V RDS(ON)=50mΩ (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 SOP-8 Package (1, 2, 3) S S S Lead Free Available (RoHS Compliant) Applications (4)G • Power Management in Notebook Computer, Portable Equipment and Batter

1.123. sm4311pskp.pdf Size:294K _sino

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SM4311PSKP ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-100A, D D RDS(ON) =2.8m (max.) @ VGS =-10V D D RDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and Rugged G Pin 1 S S Lead Free and Green Devices Available S DFN5x6-8 (RoHS Compliant) HBM ESD Capability level of 6.6KV typical ( 5,6,7,8 ) D D D D Note : The diode connected between the gate and sour

1.124. sm4310psk.pdf Size:262K _sino

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SM4310PSK ® P-Channel Enhancement Mode MOSFET Features Pin Description D D D -30V/-9.3A, D RDS(ON) = 24m (max.) @ VGS =-10V RDS(ON) = 38m (max.) @ VGS =-4.5V S S Reliable and Rugged S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in Notebook Computer, Portable Equipment and Battery P

1.125. ao4312.pdf Size:2238K _kexin

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SMD Type MOSFET N-Channel MOSFET AO4312 (KO4312) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 23 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.5mΩ (VGS = 10V) ● RDS(ON) < 6.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.126. ao4314.pdf Size:2238K _kexin

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SMD Type MOSFET N-Channel MOSFET AO4314 (KO4314) SOP-8 ■ Features ● VDS (V) = 36V 1.50 0.15 ● ID = 20 A (VGS = 10V) ● RDS(ON) < 6mΩ (VGS = 10V) ● RDS(ON) < 8.5mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.127. ao4310.pdf Size:2160K _kexin

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SMD Type MOSFET N-Channel MOSFET AO4310 (KO4310) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 27 A (VGS = 10V) ● RDS(ON) < 3.1mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.128. 2sc4317.pdf Size:1814K _kexin

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SMD Type Transistors NPN Transistors 2SC4317 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=40mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

1.129. pja3431.pdf Size:227K _panjit

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PPJA3431 20V P-Channel Enhancement Mode MOSFET – ESD Protected SOT-23 Unit: inch(mm) Voltage -20 V Current -1.5A Features  RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 

1.130. chm4431jgp.pdf Size:70K _chenmko

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CHENMKO ENTERPRISE CO.,LTD CHM4431JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

1.131. chm4311jgp.pdf Size:68K _chenmko

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CHENMKO ENTERPRISE CO.,LTD CHM4311JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

1.132. chm4311pagp.pdf Size:163K _chenmko

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CHENMKO ENTERPRISE CO.,LTD CHM4311PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) * High power and

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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