5609 Todos los transistores

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TPT5609 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent linearity of Current Gain NPN Epitaxial Low saturation voltage Silicon Transistor Maximum Ratings Symbol Rating Rating Unit TO-92L VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 25 V

Transistors 2SC5609 Silicon PNP epitaxial planer type Unit mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SA2021 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.80 0.05 equipment and automatic insertion through the tape packing 1.2

Power Transistors INCHANGE 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.0 V ICP Peak collector current A IC Collector current 5.0 A PC

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66)

TPT5609 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage Complementary to TPT5610 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO 25 V Collector- Base Voltage 14.200 VCEO 20 V

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92L Plastic-Encapsulate Transistors TO-92L 5609 TRANSISTOR (NPN) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5610 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tstg Storage Temperature -55 150 Tj Junction Temperature

SENSITRON SHD225609 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 275, REV Formerly part number SHD2256 HERMETIC POWER MOSFET N-CHANNEL FEATURES 800 Volt, 0.80 Ohm, 13A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Similar to Industry Part Type - IXTM13N80 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol