All Transistors. 5609 Datasheet

 

5609 Datasheet, Equivalent, Cross Reference Search

Type Designator: 5609

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO92

5609 Transistor Equivalent Substitute - Cross-Reference Search

 

5609 Datasheet (PDF)

0.1. tpt5609.pdf Size:216K _mcc

5609
5609

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth TPT5609Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Excellent linearity of Current GainNPN Epitaxial Low saturation voltageSilicon TransistorMaximum Ratings Symbol Rating Rating UnitTO-92LVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 25 V

0.2. 2sc5609.pdf Size:45K _panasonic

5609

Transistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SA20213 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2

 0.3. 2n5609.pdf Size:64K _no

5609

Power Transistors INCHANGE 2N5609Silicon PNP Transistors FeaturesWith TO-66 packageDesigned for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25SYMBOL PARAMETER RATING UNITVCBOCollector to base voltage 80 VVCEOCollector to emitter voltage 80 VVEBOEmitter to base voltage 5.0 VICPPeak collector current AICCollector current 5.0 APC

0.4. 2n5605 2n5607 2n5609 2n5611.pdf Size:126K _jmnic

5609
5609

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66)

 0.5. tpt5609.pdf Size:206K _lge

5609
5609

TPT5609 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features Excellent linearity of Current Gain 7.8008.200Low saturation voltage Complementary to TPT5610 0.600 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO 25 VCollector- Base Voltage 14.200VCEO 20 V

0.6. t5609-92l.pdf Size:458K _can-sheng

5609
5609

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.comTO-92L Plastic-Encapsulate TransistorsTO-92L 5609 TRANSISTOR (NPN) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5610 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

0.7. hit5609.pdf Size:143K _blue-rocket-elect

5609
5609

HIT5609(3DG5609) NPN /SILICON NPN TRANSISTOR :, Purpose: Power amplifier and switching application, electronic governor applications. :, HIT5610(3CG5610) Features: Low saturation voltage, complementary pair with HIT5610(3CG5610). /Absolute maximum ratings(Ta=25

0.8. h5609.pdf Size:106K _shantou-huashan

5609

NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TstgStorage Temperature -55~150TjJunction Temperature

0.9. shd225609.pdf Size:65K _sensitron

5609
5609

SENSITRON SHD225609SEMICONDUCTORTECHNICAL DATADATA SHEET 275, REV Formerly part number SHD2256HERMETIC POWER MOSFETN-CHANNELFEATURES: 800 Volt, 0.80 Ohm, 13A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Similar to Industry Part Type - IXTM13N80MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL

0.10. 2n5605 2n5607 2n5609 2n5611.pdf Size:127K _inchange_semiconductor

5609
5609

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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