5609 Datasheet, Equivalent, Cross Reference Search
Type Designator: 5609
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO92
5609 Transistor Equivalent Substitute - Cross-Reference Search
5609 Datasheet (PDF)
1.1. tpt5609.pdf 
Size:216K _update
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TPT5609 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent linearity of Current Gain NPN Epitaxial Low saturation voltage Silicon Transistor Maximum Ratings Symbol Rating Rating Unit TO-92L VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 25 V
1.2. shd225609.pdf Size:65K _upd-mosfet
SENSITRON SHD225609 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 275, REV – Formerly part number SHD2256 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 800 Volt, 0.80 Ohm, 13A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS (on) œ Similar to Industry Part Type - IXTM13N80 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL
1.3. 2sc5609.pdf Size:45K _panasonic
Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SA2021 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.800.05 equipment and automatic insertion through the tape packing 1.200.05 5? A
1.4. 2n5609.pdf Size:64K _no
Power Transistors INCHANGE 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.0 V ICP Peak collector current A IC Collector current 5.0 A PC C
1.5. 2n5605 2n5607 2n5609 2n5611.pdf Size:126K _jmnic
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) an
1.6. 2n5605 2n5607 2n5609 2n5611.pdf Size:127K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Excellent safe operating area Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5605 2N5607 2N5609 2N5611 Fig.1 simplified outline (TO-66)
1.7. tpt5609.pdf Size:206K _lge
TPT5609 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage Complementary to TPT5610 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO 25 V Collector- Base Voltage 14.200 VCEO 20 V Colle
1.8. t5609-92l.pdf Size:458K _can-sheng
深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92L Plastic-Encapsulate Transistors TO-92L 5609 TRANSISTOR (NPN) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5610 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
1.9. hit5609.pdf Size:143K _blue-rocket-elect
HIT5609(3DG5609) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:功率放大,功率开关及电子自动调速器。 Purpose: Power amplifier and switching application, electronic governor applications. 特点:饱和压降小,与 HIT5610(3CG5610)互补。 Features: Low saturation voltage, complementary pair with HIT5610(3CG5610). 极限参数/Absolute maximum ratings(Ta=25
1.10. h5609.pdf Size:106K _shantou-huashan
NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H5609 █ APPLICATIONS AUDIO AMPLIFICATION █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 Tstg——Storage Temperature………………………… -55~150℃ Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
