9014D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor 9015 is recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92

MCCS9014-BMicro Commercial ComponentsTM20736 Marilla Street ChatsworthS9014-CMicro Commercial ComponentsCA 91311Phone: (818) 701-4933S9014-DFax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.1A Collector-base Voltage 50VTransistors Operating and

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current IC 100 mA

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN)6FEATURES54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 )DW12 Ideal for Medium Power Amplification and Switching3MARKING:TGL6MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag

GENERAL PURPOSE TRANSISTORS NPN SILICON Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10Maximum Ratings @ T = 25C un