9014D Datasheet. Equivalente

 ..1. Size:167K  semtech
 9014a 9014b 9014c 9014d.pdf

9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor 9015 is recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92

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 s9014b s9014c s9014d.pdf

MCC S9014-B Micro Commercial Components TM 20736 Marilla Street Chatsworth S9014-C Micro Commercial Components CA 91311 Phone (818) 701-4933 S9014-D Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.1A Collector-base Voltage 50V Transistors Operating and

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 mmbt9014b mmbt9014c mmbt9014d.pdf

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA

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 mmdt9014dw.pdf

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) 6 FEATURES 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 ) DW 1 2 Ideal for Medium Power Amplification and Switching 3 MARKING TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag

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 s9014b s9014c s9014d.pdf

GENERAL PURPOSE TRANSISTORS NPN SILICON Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @ T = 25 C un