All Transistors. 9014D Datasheet

 

9014D Datasheet, Equivalent, Cross Reference Search


   Type Designator: 9014D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.315 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 64
   Noise Figure, dB: -
   Package: TO92

 9014D Transistor Equivalent Substitute - Cross-Reference Search

   

9014D Datasheet (PDF)

 ..1. Size:167K  semtech
9014a 9014b 9014c 9014d.pdf

9014D
9014D

9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor 9015 is recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92

 0.1. Size:219K  mcc
s9014b s9014c s9014d.pdf

9014D
9014D

MCCS9014-BMicro Commercial ComponentsTM20736 Marilla Street ChatsworthS9014-CMicro Commercial ComponentsCA 91311Phone: (818) 701-4933S9014-DFax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.1A Collector-base Voltage 50VTransistors Operating and

 0.2. Size:66K  semtech
mmbt9014b mmbt9014c mmbt9014d.pdf

9014D
9014D

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current IC 100 mA

 0.3. Size:1293K  cn cbi
mmdt9014dw.pdf

9014D
9014D

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN)6FEATURES54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 )DW12 Ideal for Medium Power Amplification and Switching3MARKING:TGL6MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag

 0.4. Size:777K  cn xch
s9014b s9014c s9014d.pdf

9014D
9014D

GENERAL PURPOSE TRANSISTORS NPN SILICON Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10Maximum Ratings @ T = 25C un

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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