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A747 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: A747
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: X09
 

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A747 Datasheet (PDF)

 0.1. Size:147K  jmnic
2sa747.pdf pdf_icon

A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE

 0.2. Size:150K  jmnic
2sa747a.pdf pdf_icon

A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME

 0.3. Size:1892K  cn vbsemi
vbza7470.pdf pdf_icon

A747

VBZA7470www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.014 at VGS = 10 V TrenchFET Power MOSFET1040 15 nC 100 % Rg Tested0.016 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectificat

 0.4. Size:196K  inchange semiconductor
2sa747.pdf pdf_icon

A747

isc Silicon PNP Power Transistor 2SA747DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... A5T3905 , A5T3906 , A5T4026 , A5T4123 , A5T4125 , A5T4126 , A719 , A719R , BD135 , A747A , A747B , A747C , A748 , A748B , A748C , A749 , A749B .

History: BD711 | 2SC1129 | RT1N144M | 3DG817 | 2N1958-18 | RN2403 | BCW48

 

 
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