A747 Todos los transistores

 

A747 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A747

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: X09

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A747 datasheet

 0.1. Size:147K  jmnic
2sa747.pdf pdf_icon

A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE

 0.2. Size:150K  jmnic
2sa747a.pdf pdf_icon

A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAME

 0.3. Size:1892K  cn vbsemi
vbza7470.pdf pdf_icon

A747

VBZA7470 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.014 at VGS = 10 V TrenchFET Power MOSFET 10 40 15 nC 100 % Rg Tested 0.016 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectificat

 0.4. Size:196K  inchange semiconductor
2sa747.pdf pdf_icon

A747

isc Silicon PNP Power Transistor 2SA747 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

Otros transistores... A5T3905 , A5T3906 , A5T4026 , A5T4123 , A5T4125 , A5T4126 , A719 , A719R , BD135 , A747A , A747B , A747C , A748 , A748B , A748C , A749 , A749B .

 

 

 


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