A747 PDF and Equivalents Search

 

A747 Specs and Replacement

Type Designator: A747

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: X09

 A747 Substitution

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A747 datasheet

 0.1. Size:147K  jmnic

2sa747.pdf pdf_icon

A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE... See More ⇒

 0.2. Size:150K  jmnic

2sa747a.pdf pdf_icon

A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAME... See More ⇒

 0.3. Size:1892K  cn vbsemi

vbza7470.pdf pdf_icon

A747

VBZA7470 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.014 at VGS = 10 V TrenchFET Power MOSFET 10 40 15 nC 100 % Rg Tested 0.016 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectificat... See More ⇒

 0.4. Size:196K  inchange semiconductor

2sa747.pdf pdf_icon

A747

isc Silicon PNP Power Transistor 2SA747 DESCRIPTION High Power Dissipation- P = 100W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1116 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: A5T3905, A5T3906, A5T4026, A5T4123, A5T4125, A5T4126, A719, A719R, BD135, A747A, A747B, A747C, A748, A748B, A748C, A749, A749B

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