All Transistors. A747 Datasheet

 

A747 Datasheet, Equivalent, Cross Reference Search


   Type Designator: A747
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: X09

 A747 Transistor Equivalent Substitute - Cross-Reference Search

   

A747 Datasheet (PDF)

 0.1. Size:147K  jmnic
2sa747.pdf

A747
A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE

 0.2. Size:150K  jmnic
2sa747a.pdf

A747
A747

JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME

 0.3. Size:1892K  cn vbsemi
vbza7470.pdf

A747
A747

VBZA7470www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.014 at VGS = 10 V TrenchFET Power MOSFET1040 15 nC 100 % Rg Tested0.016 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectificat

 0.4. Size:196K  inchange semiconductor
2sa747.pdf

A747
A747

isc Silicon PNP Power Transistor 2SA747DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 0.5. Size:190K  inchange semiconductor
2sa747a.pdf

A747
A747

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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