AF124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AF124
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.075 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO72
Búsqueda de reemplazo de AF124
AF124 Datasheet (PDF)
draf124x.pdf

DRAF124XTotal pages pageTentativeDRAF124XSilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : LFPackage Code : ML3-N4-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -100 mAR2Total powe
draf124e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124EDRA3124E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
draf124t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124TDRA3124T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
Otros transistores... AF117N , AF118 , AF121 , AF121-07 , AF121S , AF122 , AF122BL , AF122Y , 100DA025D , AF125 , AF126 , AF127 , AF128 , AF128BK , AF128W , AF128Y , AF129 .
History: TIP518 | KSC5321 | ASY91-2 | BC135 | KUV40
History: TIP518 | KSC5321 | ASY91-2 | BC135 | KUV40



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70