AF124 Datasheet. Specs and Replacement
Type Designator: AF124 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO72
AF124 Substitution
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AF124 datasheet
DRAF124X Total pages page Tentative DRAF124X Silicon PNP epitaxial planar type For digital circuits Marking Symbol LF Package Code ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -100 mA R2 Total powe... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF124E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF124E DRA3124E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free package Packa... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRAF124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF124T DRA3124T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of ... See More ⇒
Detailed specifications: AF117N, AF118, AF121, AF121-07, AF121S, AF122, AF122BL, AF122Y, TIP31C, AF125, AF126, AF127, AF128, AF128BK, AF128W, AF128Y, AF129
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