AM1214-200 Todos los transistores

 

AM1214-200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM1214-200
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 70 V
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1400 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: M205
 

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AM1214-200 Datasheet (PDF)

 ..1. Size:57K  st
 am1214-200.pdf pdf_icon

AM1214-200

AM1214-200RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 200 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (M205)hermetically sealedORDER CODE BRANDINGAM1214-200 1214-200PIN CONNECTIONDESCRIPTION

 7.1. Size:92K  st
 am1214-300.pdf pdf_icon

AM1214-200

AM1214-300RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).P = 270 W MIN. WITH 6.3 dB GAINOUThermetically sealedORDER CODE BRANDINGAM1214-300 1214-300PIN CONNECTIONDESCRIP

 7.2. Size:64K  st
 am1214-325.pdf pdf_icon

AM1214-200

AM1214-325RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed=ORDER CODE BRANDINGAM1214-325 1214-325PIN CONNECTIONDESCRIPTI

 7.3. Size:95K  st
 am1214-175.pdf pdf_icon

AM1214-200

AM1214-175RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT = 160 W MIN. WITH 7.3 dB GAINhermetically sealedORDER CODE BRANDINGAM1214-175 1214-175PIN CONNECTIONDESCRIPTI

MOSTRAR MÁS

Otros transistores... AM1011-055 , AM1011-070 , AM1011-075 , AM1011-300 , AM1011-400 , AM1011-500 , AM1214-100 , AM1214-175 , TIP31C , AM1214-300 , AM1214-325 , AM1416-100 , AM1416-200 , AM1517-012 , AM1517-025 , AM2729-110 , AM2729-125 .

History: AM82731-012 | BF906

 

 
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