All Transistors. AM1214-200 Datasheet

 

AM1214-200 Datasheet and Replacement


   Type Designator: AM1214-200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M205
 

 AM1214-200 Substitution

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AM1214-200 Datasheet (PDF)

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 am1214-200.pdf pdf_icon

AM1214-200

AM1214-200RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 200 W MIN. WITH 7.0 dB GAINOUT =.400 x .500 2LFL (M205)hermetically sealedORDER CODE BRANDINGAM1214-200 1214-200PIN CONNECTIONDESCRIPTION

 7.1. Size:92K  st
 am1214-300.pdf pdf_icon

AM1214-200

AM1214-300RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).P = 270 W MIN. WITH 6.3 dB GAINOUThermetically sealedORDER CODE BRANDINGAM1214-300 1214-300PIN CONNECTIONDESCRIP

 7.2. Size:64K  st
 am1214-325.pdf pdf_icon

AM1214-200

AM1214-325RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT 325 W MIN. WITH 6.4 dB GAIN hermetically sealed=ORDER CODE BRANDINGAM1214-325 1214-325PIN CONNECTIONDESCRIPTI

 7.3. Size:95K  st
 am1214-175.pdf pdf_icon

AM1214-200

AM1214-175RF & MICROWAVE TRANSISTORSL-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.3:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .500 2LFL (S038).POUT = 160 W MIN. WITH 7.3 dB GAINhermetically sealedORDER CODE BRANDINGAM1214-175 1214-175PIN CONNECTIONDESCRIPTI

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Datasheet: AM1011-055 , AM1011-070 , AM1011-075 , AM1011-300 , AM1011-400 , AM1011-500 , AM1214-100 , AM1214-175 , TIP31C , AM1214-300 , AM1214-325 , AM1416-100 , AM1416-200 , AM1517-012 , AM1517-025 , AM2729-110 , AM2729-125 .

History: MPQ3762 | DMC9610E | 2SD1500 | KST812M4 | L2SD882Q | ACY23V | OC42N

Keywords - AM1214-200 transistor datasheet

 AM1214-200 cross reference
 AM1214-200 equivalent finder
 AM1214-200 lookup
 AM1214-200 substitution
 AM1214-200 replacement

 

 
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