AM83135-001 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM83135-001  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 3.5 V

Corriente del colector DC máxima (Ic): 0.9 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3500 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: SO64

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AM83135-001 datasheet

 5.1. Size:57K  st
 am83135-03.pdf pdf_icon

AM83135-001

AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 30 W MIN. WITH 5.5 dB GAIN OUT = .310 x .310 2LFL (S064) hermetically sealed ORDER CODE BRANDING AM83135-030 AM83135-30 DESCRIPTION The AM83135

 5.2. Size:44K  st
 am83135-04.pdf pdf_icon

AM83135-001

AM83135-040 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 40 W MIN. WITH 5.1 dB GAIN OUT = .310 x .310 2LFL (S064) hermetically sealed ORDER CODE BRANDING AM83135-040 AM83135-40 DESCRIPTION The AM83135

 5.3. Size:61K  st
 am83135-05.pdf pdf_icon

AM83135-001

AM83135-005 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 5.0 W MIN. WITH 5.2 dB GAIN = hermetically sealed ORDER CODE BRANDING AM83135-005 83135-5 DESCRIPTION PIN CONNE

 5.4. Size:61K  st
 am83135-015.pdf pdf_icon

AM83135-001

AM83135-015 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 15 W MIN. WITH 5.2 dB GAIN OUT = .310 x .310 2LFL (S064) ORDER CODE BRANDING DESCRIPTION AM83131-015 83135-15 The AM83135-015 device is a high po

MOSTRAR MÁS

Otros transistores... AM82223-010, AM82325-040, AM82325-050, AM82731-003, AM82731-006, AM82731-012, AM82731-025, AM82731-050, NJW0281G, AM83135-003, AM83135-005, AM83135-010, AM83135-015, AM83135-030, AM83135-040, AM83135-050, AR220GY