AM83135-030 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM83135-030
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 55 V
Tensión colector-emisor (Vce): 55 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3500 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SO64
Búsqueda de reemplazo de AM83135-030
AM83135-030 Datasheet (PDF)
am83135-03.pdf

AM83135-030RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 5.5 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-030 AM83135-30DESCRIPTIONThe AM83135
am83135-04.pdf

AM83135-040RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 5.1 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-040 AM83135-40DESCRIPTIONThe AM83135
am83135-05.pdf

AM83135-005RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.0 W MIN. WITH 5.2 dB GAIN=hermetically sealedORDER CODE BRANDINGAM83135-005 83135-5DESCRIPTIONPIN CONNE
am83135-015.pdf

AM83135-015RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 15 W MIN. WITH 5.2 dB GAINOUT =.310 x .310 2LFL (S064)ORDER CODE BRANDINGDESCRIPTION AM83131-015 83135-15The AM83135-015 device is a high po
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc1885 datasheet | 2sc2580 | 2sc710 | 2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor