All Transistors. AM83135-030 Datasheet

 

AM83135-030 Datasheet and Replacement


   Type Designator: AM83135-030
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO64
 

 AM83135-030 Substitution

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AM83135-030 Datasheet (PDF)

 4.1. Size:57K  st
 am83135-03.pdf pdf_icon

AM83135-030

AM83135-030RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 5.5 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-030 AM83135-30DESCRIPTIONThe AM83135

 5.1. Size:44K  st
 am83135-04.pdf pdf_icon

AM83135-030

AM83135-040RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 5.1 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-040 AM83135-40DESCRIPTIONThe AM83135

 5.2. Size:61K  st
 am83135-05.pdf pdf_icon

AM83135-030

AM83135-005RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.0 W MIN. WITH 5.2 dB GAIN=hermetically sealedORDER CODE BRANDINGAM83135-005 83135-5DESCRIPTIONPIN CONNE

 5.3. Size:61K  st
 am83135-015.pdf pdf_icon

AM83135-030

AM83135-015RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 15 W MIN. WITH 5.2 dB GAINOUT =.310 x .310 2LFL (S064)ORDER CODE BRANDINGDESCRIPTION AM83131-015 83135-15The AM83135-015 device is a high po

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Datasheet: AM82731-012 , AM82731-025 , AM82731-050 , AM83135-001 , AM83135-003 , AM83135-005 , AM83135-010 , AM83135-015 , D882P , AM83135-040 , AM83135-050 , AR220GY , ASX11 , ASX12 , ASY10 , ASY11 , ASY12 .

History: BFV92 | 2SD1990 | NPS2712 | BCR112W

Keywords - AM83135-030 transistor datasheet

 AM83135-030 cross reference
 AM83135-030 equivalent finder
 AM83135-030 lookup
 AM83135-030 substitution
 AM83135-030 replacement

 

 
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