AM83135-030 Datasheet, Equivalent, Cross Reference Search
Type Designator: AM83135-030
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3500 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SO64
AM83135-030 Transistor Equivalent Substitute - Cross-Reference Search
AM83135-030 Datasheet (PDF)
am83135-03.pdf
AM83135-030RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 5.5 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-030 AM83135-30DESCRIPTIONThe AM83135
am83135-04.pdf
AM83135-040RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 5.1 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-040 AM83135-40DESCRIPTIONThe AM83135
am83135-05.pdf
AM83135-005RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.0 W MIN. WITH 5.2 dB GAIN=hermetically sealedORDER CODE BRANDINGAM83135-005 83135-5DESCRIPTIONPIN CONNE
am83135-015.pdf
AM83135-015RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 15 W MIN. WITH 5.2 dB GAINOUT =.310 x .310 2LFL (S064)ORDER CODE BRANDINGDESCRIPTION AM83131-015 83135-15The AM83135-015 device is a high po
am83135-01.pdf
AM83135-001RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.10:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).P = 1.0 W MIN. WITH 5.2 dB GAINOUThermetically sealedORDER CODEBRANDINGAM83135-00183135-1DESCRIPTIONPIN C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
