AM83135-040 Todos los transistores

 

AM83135-040 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM83135-040
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3500 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SO64

 Búsqueda de reemplazo de transistor bipolar AM83135-040

 

AM83135-040 Datasheet (PDF)

 4.1. Size:44K  st
 am83135-04.pdf pdf_icon

AM83135-040

AM83135-040 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 40 W MIN. WITH 5.1 dB GAIN OUT = .310 x .310 2LFL (S064) hermetically sealed ORDER CODE BRANDING AM83135-040 AM83135-40 DESCRIPTION The AM83135

 5.1. Size:57K  st
 am83135-03.pdf pdf_icon

AM83135-040

AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 30 W MIN. WITH 5.5 dB GAIN OUT = .310 x .310 2LFL (S064) hermetically sealed ORDER CODE BRANDING AM83135-030 AM83135-30 DESCRIPTION The AM83135

 5.2. Size:61K  st
 am83135-05.pdf pdf_icon

AM83135-040

AM83135-005 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .5 1 VSWR CAPABILITY .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .400 x .400 2NLFL (S042) .POUT 5.0 W MIN. WITH 5.2 dB GAIN = hermetically sealed ORDER CODE BRANDING AM83135-005 83135-5 DESCRIPTION PIN CONNE

 5.3. Size:61K  st
 am83135-015.pdf pdf_icon

AM83135-040

AM83135-015 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 15 W MIN. WITH 5.2 dB GAIN OUT = .310 x .310 2LFL (S064) ORDER CODE BRANDING DESCRIPTION AM83131-015 83135-15 The AM83135-015 device is a high po

MOSTRAR MÁS

Otros transistores... AM82731-025 , AM82731-050 , AM83135-001 , AM83135-003 , AM83135-005 , AM83135-010 , AM83135-015 , AM83135-030 , 2SA1015 , AM83135-050 , AR220GY , ASX11 , ASX12 , ASY10 , ASY11 , ASY12 , ASY12-1 .

History: BFV51 | MJD112-1G | RN2312 | DTA114EUB | BUT21A | SUR539J | BUS132

 

 
Back to Top

 


 
.