All Transistors. AM83135-040 Datasheet

 

AM83135-040 Datasheet and Replacement


   Type Designator: AM83135-040
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SO64
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AM83135-040 Datasheet (PDF)

 4.1. Size:44K  st
 am83135-04.pdf pdf_icon

AM83135-040

AM83135-040RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 40 W MIN. WITH 5.1 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-040 AM83135-40DESCRIPTIONThe AM83135

 5.1. Size:57K  st
 am83135-03.pdf pdf_icon

AM83135-040

AM83135-030RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 30 W MIN. WITH 5.5 dB GAINOUT =.310 x .310 2LFL (S064)hermetically sealedORDER CODE BRANDINGAM83135-030 AM83135-30DESCRIPTIONThe AM83135

 5.2. Size:61K  st
 am83135-05.pdf pdf_icon

AM83135-040

AM83135-005RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONS.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.5:1 VSWR CAPABILITY.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.400 x .400 2NLFL (S042).POUT 5.0 W MIN. WITH 5.2 dB GAIN=hermetically sealedORDER CODE BRANDINGAM83135-005 83135-5DESCRIPTIONPIN CONNE

 5.3. Size:61K  st
 am83135-015.pdf pdf_icon

AM83135-040

AM83135-015RF & MICROWAVE TRANSISTORSS-BAND RADAR APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.EMITTER SITE BALLASTED.LOW THERMAL RESISTANCE.INPUT/OUTPUT MATCHING.OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 15 W MIN. WITH 5.2 dB GAINOUT =.310 x .310 2LFL (S064)ORDER CODE BRANDINGDESCRIPTION AM83131-015 83135-15The AM83135-015 device is a high po

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KT208I | DRC9143X | BDY12B | 2SC5778 | 2SD1007HR | ED1602D | SFE245

Keywords - AM83135-040 transistor datasheet

 AM83135-040 cross reference
 AM83135-040 equivalent finder
 AM83135-040 lookup
 AM83135-040 substitution
 AM83135-040 replacement

 

 
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