2N1000 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

VCES IC90 VCE(SAT)High Voltage IGBTIXGP 2N100 1000 V 2.0 A 2.7 VIXGP 2N100A 1000 V 2.0 A 3.5 VSymbol Test Conditions Maximum RatingsTO-220VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 V14IC25 TC = 25C 4 A23IC90 TC = 90C 2 AICM TC = 25C, 1 ms 8 A1 = Gate 2 = Collector3 = Emitter 4 =

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

Advance Technical InformationHigh Voltage HiPerFETTMVDSS = 1000VIXFT12N100QHVPower MOSFETID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1000 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG = Ga

VCES IC90 VCE(SAT)High Voltage IGBTIXGP 2N100 1000 V 2.0 A 2.7 VIXGP 2N100A 1000 V 2.0 A 3.5 VSymbol Test Conditions Maximum RatingsTO-220VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 V14IC25 TC = 25C 4 A23IC90 TC = 90C 2 AICM TC = 25C, 1 ms 8 A1 = Gate 2 = Collector3 = Emitter 4 =

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

VDSS ID25 RDS(on)HiPerFETTMIXFT 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFT12 N100 1000 V 12 A 1.05 N-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Family trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 Case StyleVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TMIXFR 10N100F 1000 V 9 A 1.20 F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol

IXZ4DF12N100 RF Power MOSFET & DRIVER 1000 Volts Driver / MOSFET Combination 12 A DEIC-515 Driver combined with a DE375-102N12A MOSFET 0.7 Ohms Gate driver matched to MOSFET Features Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability IXYS advanced Z-MOS process Low RDS(on)

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100Q 1000 V 10 A 1.05 WISOPLUS247TM Q CLASSIXFR 10N100Q 1000 V 9 A 1.20 W(Electrically Isolated Back Surface) trr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 1000 V

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

AOD2N1001000V,2A N-Channel MOSFETGeneral Description Product SummaryThe AOD2N100 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 1100V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2ADC applications. RDS(ON) (at VGS=10V)

SL12N100Features Low gate charge Low C (typ 13pF)rss Fast switchin 100% avalanche tested Improved dv/dt capability RoHS productApplications High frequency switching mode power supply Electronic ballast based on half bridge LED power suppliesAbsolute Ratings (Tc=25)Parameter Symbol Value UnitDrain-Source Voltage V 1000 VDSS12 AI T

WMO2N100D1 WMAA2N100D1 1000V 2A 6.3 N-ch Power MOSFET Description TO-252 TO-251-L9.4 WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. D G S G Features D S V =1050V

WML12N100C2, WMM C2 W M12N100CWMN12N WMJ12N10 K12N100CN100C2, W 00C2, WMK C2 1000V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N100F,CS2N100P,CS2N100U,CS2N100D1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100F T

nvertCS2N100F,CS2N100P,CS2N100USuzhou Convert Semiconductor Co ., Ltd.1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100F TO-220F CS

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N100LF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100LF TO-220F CS2N100LFAbsolut

SFP055N100C2,SFB052N100C2 N-MOSFET 100V, 4.5m, 180AFeatures Product Summary Extremely low on-resistance RDS(on)VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 4.5m Qualified according to JEDEC criteria ID180A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)

SFP045N100C3,SFB042N100C3 N-MOSFET 100V, 3.9m, 120AFeatures Product Summary Extremely low on-resistance RDS(on) VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 3.9m Qualified according to JEDEC criteria IDR 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested Battery management UPS (Uninter

SFW042N100C3 N-MOSFET 100V, 3.4m, 160AFeaturesProduct Summary Enhancement Mode VDS100V Very Low On-Resistance RDS(on)3.4m Fast Switching ID 160A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested DC/DC C

SFP055N100BC2,SFB052N100BC2 N-MOSFET 100V, 4.0m, 200AFeaturesProduct SummaryVDS100V Enhancement modeRDS(on) typ. 4.0m Very low on-resistance RDS(on) @ VGS=10VID200A Fast Switching and High efficiency 100% Avalanche Tested100% DVDS Tested Pb-free lead plating; RoHS compliant100% Avalanche TestedSFP055N100BC2 SFB052N100BC2Package Marking and

SFP055N100AC2,SFB052N100AC2 N-MOSFET 100V, 4.5m, 180AFeatures Product Summary Extremely low on-resistance RDS(on)VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 4.5m Qualified according to JEDEC criteria ID180A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies

SFP032N100C3,SFB030N100C3 N-MOSFET 100V, 2.6m, 260AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.6m DS(on) typ. Fast switchingI 260A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manag

SFP055N100C3,SFB052N100C3N-MOSFET 100V, 4.3m, 120AFeatures Product Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on)4.3m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

SFP045N100BC3,SFB042N100BC3N-MOSFET 100V, 3.5m, 120AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 3.5m Fast SwitchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFP045N100BC3 SFB042N100BC3Package Marking and

isc N-Channel MOSFET Transistor FQD2N100FEATURESDrain Current I = 1.6A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R 9(Max)DS(on):100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD2N100FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN