All Transistors. 2N1000 Datasheet

 

2N1000 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N1000

Material of Transistor: Ge

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

2N1000 Transistor Equivalent Substitute - Cross-Reference Search

 

2N1000 Datasheet (PDF)

9.1. fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf Size:731K _fairchild_semi

2N1000
2N1000

January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t

9.2. ixga12n100 ixgp12n100 ixga12n100a ixgp12n100a.pdf Size:51K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

 9.3. ixfr10n100q ixfr12n100q.pdf Size:33K _ixys

2N1000
2N1000

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100Q 1000 V 10 A 1.05 WISOPLUS247TM Q CLASSIXFR 10N100Q 1000 V 9 A 1.20 W(Electrically Isolated Back Surface) trr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 1000 V

9.4. ixtm2n100 ixtm2n100a ixtm2n95 ixtm2n95a ixtp2n100a ixtp2n95 ixtp2n95a.pdf Size:65K _ixys

2N1000

 9.5. ixgp12n100au1.pdf Size:84K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

9.6. ixz4df12n100.pdf Size:245K _ixys

2N1000
2N1000

IXZ4DF12N100 RF Power MOSFET & DRIVER 1000 Volts Driver / MOSFET Combination 12 A DEIC-515 Driver combined with a DE375-102N12A MOSFET 0.7 Ohms Gate driver matched to MOSFET Features Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability IXYS advanced Z-MOS process Low RDS(on)

9.7. ixfr10n100f ixfr12n100f.pdf Size:97K _ixys

2N1000
2N1000

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TMIXFR 10N100F 1000 V 9 A 1.20 F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol

9.8. ixgh12n100a.pdf Size:34K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

9.9. ixgh12n100u1.pdf Size:119K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

9.10. ixft12n100qhv.pdf Size:148K _ixys

2N1000
2N1000

Advance Technical InformationHigh Voltage HiPerFETTMVDSS = 1000VIXFT12N100QHVPower MOSFETID25 = 12A Q-CLASS RDS(on) 1.05 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1000 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG = Ga

9.11. ixgh32n100a3.pdf Size:120K _ixys

2N1000
2N1000

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

9.12. ixgt32n100a3.pdf Size:120K _ixys

2N1000
2N1000

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 1000 V G C (TAB) VCGR TJ = 25C to 150C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (

9.13. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

2N1000
2N1000

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

9.14. ixga12n100u1 ixgp12n100u1 ixga12n100au1 ixgp12n100au1.pdf Size:116K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

9.15. ixgp2n100.pdf Size:83K _ixys

2N1000
2N1000

VCES IC90 VCE(SAT)High Voltage IGBTIXGP 2N100 1000 V 2.0 A 2.7 VIXGP 2N100A 1000 V 2.0 A 3.5 VSymbol Test Conditions Maximum RatingsTO-220VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 V14IC25 TC = 25C 4 A23IC90 TC = 90C 2 AICM TC = 25C, 1 ms 8 A1 = Gate 2 = Collector3 = Emitter 4 =

9.16. ixgp2n100a.pdf Size:83K _ixys

2N1000
2N1000

VCES IC90 VCE(SAT)High Voltage IGBTIXGP 2N100 1000 V 2.0 A 2.7 VIXGP 2N100A 1000 V 2.0 A 3.5 VSymbol Test Conditions Maximum RatingsTO-220VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 V14IC25 TC = 25C 4 A23IC90 TC = 90C 2 AICM TC = 25C, 1 ms 8 A1 = Gate 2 = Collector3 = Emitter 4 =

9.17. ixft10n100 ixft12n100.pdf Size:556K _ixys

2N1000
2N1000

VDSS ID25 RDS(on)HiPerFETTMIXFT 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFT12 N100 1000 V 12 A 1.05 N-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Family trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 Case StyleVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150

9.18. ixta2n100 ixtp2n100.pdf Size:76K _ixys

2N1000
2N1000

High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by

9.19. ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf Size:570K _ixys

2N1000
2N1000

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

9.20. ixgp12n100.pdf Size:50K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

9.21. ixgh12n100 ixgh12n100a.pdf Size:35K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

9.22. ixgp12n100u1.pdf Size:84K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100U1 1000 V 24 A 3.5 VCombi PackIXGA/IXGP12N100AU1 1000 V 24 A 4.0 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220AB(IXGP)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C24 AIC90 TC = 90C12 AICM TC =

9.23. ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf Size:105K _ixys

2N1000
2N1000

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

9.24. ixgh12n100au1.pdf Size:119K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

9.25. ixgp12n100a.pdf Size:50K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)IGBTIXGA/IXGP12N100 1000 V 24 A 3.5 VIXGA/IXGP12N100A 1000 V 24 A 4.0 VPreliminary Data SheetTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VGVGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C24 ATO-263 (IXGA)IC90 TC = 90C12 AICM TC = 25C, 1 ms 48 A

9.26. ixgh12n100.pdf Size:34K _ixys

2N1000
2N1000

VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =

9.27. aod2n100.pdf Size:352K _aosemi

2N1000
2N1000

AOD2N1001000V,2A N-Channel MOSFETGeneral Description Product SummaryThe AOD2N100 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 1100V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2ADC applications. RDS(ON) (at VGS=10V)

9.28. sdf12n100.pdf Size:155K _solitron

2N1000

9.29. sdf2n100.pdf Size:171K _solitron

2N1000

9.30. cs2n100f cs2n100p cs2n100u.pdf Size:419K _convert

2N1000
2N1000

nvertCS2N100F,CS2N100P,CS2N100USuzhou Convert Semiconductor Co ., Ltd.1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100F TO-220F CS

9.31. cs2n100f cs2n100p cs2n100u cs2n100d.pdf Size:454K _convert

2N1000
2N1000

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N100F,CS2N100P,CS2N100U,CS2N100D1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100F T

9.32. cs2n100lf.pdf Size:395K _convert

2N1000
2N1000

nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N100LF1000V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N100LF TO-220F CS2N100LFAbsolut

9.33. aod2n100.pdf Size:208K _inchange_semiconductor

2N1000
2N1000

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD2N100FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: 2G605 , 2H1254 , 2H1255 , 2H1256 , 2H1257 , 2H1258 , 2H1259 , 2N100 , BC558 , 2N1003 , 2N1004 , 2N1005 , 2N1006 , 2N1007 , 2N1008 , 2N1008A , 2N1008B .

 

 
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