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BC558 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC558

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 75 MHz

Ganancia de corriente contínua (hfe): 75

Empaquetado / Estuche: TO92

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BC558 Datasheet (PDF)

1.1. bc556 bc557 bc558.pdf Size:159K _motorola

BC558
BC558

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC

1.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

BC558
BC558

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC

 1.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

BC558
BC558

BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V

1.4. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

BC558
BC558

BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE

 1.5. sbc558.pdf Size:94K _auk

BC558
BC558

 SBC558 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with SBC548 Ordering Information Type NO. Marking Package Code SBC558 SBC558 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ.

1.6. bc556 bc557 bc558.pdf Size:353K _cdil

BC558
BC558

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emi

1.7. bc556 bc557 bc558.pdf Size:274K _kec

BC558
BC558

SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 M

1.8. bc556 bc557 bc558.pdf Size:573K _lge

BC558
BC558

 BC556/557/558(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30 -65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeter

1.9. bc556 bc557 bc558.pdf Size:2241K _wietron

BC558
BC558

BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ℃ ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Curre

1.10. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _diotec

BC558
BC558

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-07 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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