All Transistors. BC558 Datasheet

 

BC558 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC558

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO92

BC558 Transistor Equivalent Substitute - Cross-Reference Search

 

BC558 Datasheet (PDF)

0.1. bc556 bc557 bc558.pdf Size:159K _motorola

BC558
BC558

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC

0.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

BC558
BC558

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC556/DAmplifier TransistorsBC556,BPNP SiliconBC557A,B,CCOLLECTORBC558B12BASE3EMITTERMAXIMUM RATINGS12BC

 0.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

BC558
BC558

BC556/557/558/559/560Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : BC556 -80 V: BC557/560 -50 V: BC558/559 -30 V

0.4. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

BC558
BC558

BC556B, BC557A, B, C,BC558BAmplifier TransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGS 2BASERating Symbol Value UnitCollector - Emitter Voltage VCEO Vdc3BC556 -65EMITTERBC557 -45BC558 -30Collector - Base Voltage VCBO VdcBC556 -80BC557 -50BC558 -30TO-92Emitter - Base Voltage VEBO -5.0 Vdc CASE

 0.5. sbc558.pdf Size:94K _auk

BC558
BC558

SBC558SemiconductorSemiconductorPNP Silicon TransistorDescriptions General purpose application Switching applicationFeatures High voltage : VCEO=-30V Complementary pair with SBC548Ordering InformationType NO. Marking Package Code SBC558 SBC558 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.060.11.27 Typ.2.54 Typ.

0.6. bc556 bc557 bc558.pdf Size:353K _cdil

BC558
BC558

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORSBC557, A, B, CBC558, A, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC556 BC557 BC558 UNITSCollector Emi

0.7. bc556 bc557 bc558.pdf Size:274K _kec

BC558
BC558

SEMICONDUCTOR BC556/7/8TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .B CFEATURESFor Complementary With NPN Type BC546/547/548.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_H J 14.00 + 0.50BC556 -80K 0.55 M

0.8. bc556 bc557 bc558.pdf Size:573K _lge

BC558
BC558

BC556/557/558(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30-65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeter

0.9. bc556 bc557 bc558.pdf Size:2241K _wietron

BC558
BC558

BC556, A/BBC557, A/B/CBC558, A/B/CPNP General Purpose TransistorCOLLECTOR3P b Lead(Pb)-Free2BASE1231EMITTERTO-92Maximum Ratings ( T =25 C unless otherwise noted)ARating Symbol BC556 BC557 BC558 UnitV -65 -45Collector-Emitter Voltage ECO -30V-30VCollector-Base Voltage CBO -80 -50 VVEBOEmitter-Base Voltage -5 -5 -5 Vl 100Collector Curre

0.10. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _diotec

BC558
BC558

BC556xBK ... BC559xBKBC556xBK ... BC559xBKGeneral Purpose Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2009-12-070.1Power dissipation Verlustleistung 500 mW4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gC B EPlastic material has UL classification 94V-0Gehusematerial

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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