BCR523 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCR523
Código: XGs
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BCR523
BCR523 Datasheet (PDF)
bcr523.pdf
BCR 523NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1k,R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 523 XGs C62702-C2487 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEBO 5
bcr523 bcr523u.pdf
BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2
bcr523series.pdf
BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2
bcr523u.pdf
BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2
bcr521.pdf
BCR 521NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=1k, R2=1k)Type Marking Ordering Code Pin Configuration PackageBCR 521 XVs Q62702-C2355 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vol
bcr521.pdf
BCR521NPN Silicon Digital Transistor Built in bias resistor (R1= 1 k, R2= 1 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR521 XVs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage VCBO
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
