BCR523
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCR523
Código: XGs
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BCR523
BCR523
Datasheet (PDF)
..1. Size:35K siemens
bcr523.pdf 
BCR 523NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1k,R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 523 XGs C62702-C2487 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEBO 5
..2. Size:847K infineon
bcr523 bcr523u.pdf
BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2
0.1. Size:847K infineon
bcr523series.pdf
BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2
0.2. Size:845K infineon
bcr523u.pdf
BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2
9.1. Size:35K siemens
bcr521.pdf
BCR 521NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=1k, R2=1k)Type Marking Ordering Code Pin Configuration PackageBCR 521 XVs Q62702-C2355 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vol
9.2. Size:525K infineon
bcr521.pdf
BCR521NPN Silicon Digital Transistor Built in bias resistor (R1= 1 k, R2= 1 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR521 XVs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage VCBO
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
