All Transistors. BCR523 Datasheet

 

BCR523 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCR523
   SMD Transistor Code: XGs
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23

 BCR523 Transistor Equivalent Substitute - Cross-Reference Search

   

BCR523 Datasheet (PDF)

 ..1. Size:35K  siemens
bcr523.pdf

BCR523
BCR523

BCR 523NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1k,R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 523 XGs C62702-C2487 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEBO 5

 ..2. Size:847K  infineon
bcr523 bcr523u.pdf

BCR523
BCR523

BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2

 0.1. Size:847K  infineon
bcr523series.pdf

BCR523
BCR523

BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2

 0.2. Size:845K  infineon
bcr523u.pdf

BCR523
BCR523

BCR523...NPN Silicon Digital Transistors Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 k, R2= 10 k) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BCR523 BCR523UCC1 B2 E236 5 4R2R1R1 TR2TR1 R1R2R2

 9.1. Size:35K  siemens
bcr521.pdf

BCR523
BCR523

BCR 521NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=1k, R2=1k)Type Marking Ordering Code Pin Configuration PackageBCR 521 XVs Q62702-C2355 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vol

 9.2. Size:525K  infineon
bcr521.pdf

BCR523
BCR523

BCR521NPN Silicon Digital Transistor Built in bias resistor (R1= 1 k, R2= 1 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR521 XVs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage VCBO

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KRC281M

 

 
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