BCR555 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCR555

Código: XDs

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT23

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BCR555 datasheet

 ..1. Size:35K  siemens
 bcr555.pdf pdf_icon

BCR555

BCR 555 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1 = 2.2k , R2 = 10k ) Type Marking Ordering Code Pin Configuration Package BCR 555 XDs Q62702-C2383 1=B 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage

 ..2. Size:525K  infineon
 bcr555.pdf pdf_icon

BCR555

BCR555 PNP Silicon Digital Transistor Built in bias resistor (R1= 2.2 k , R2= 10 k ) 2 3 Pb-free (RoHS compliant) package 1 Qualified according AEC Q101 C 3 R1 R 2 1 2 B E EHA07183 Type Marking Pin Configuration Package BCR555 XDs SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage VCEO 50 Collector-base voltage VC

 9.1. Size:35K  siemens
 bcr553.pdf pdf_icon

BCR555

BCR 553 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=2.2k ) Type Marking Ordering Code Pin Configuration Package BCR 553 XBs Q62702-C2371 1=B 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base volta

 9.2. Size:525K  infineon
 bcr553.pdf pdf_icon

BCR555

BCR553 PNP Silicon Digital Transistor Built in bias resistor (R1= 2.2 k , R2= 2.2 k ) 2 3 Pb-free (RoHS compliant) package 1 Qualified according AEC Q101 C 3 R1 R 2 1 2 B E EHA07183 Type Marking Pin Configuration Package BCR553 XBs SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage VCEO 50 Collector-base voltage V

MOSTRAR MÁS

Otros transistores... BCR503, BCR505, BCR512, BCR519, BCR521, BCR523, BCR533, BCR553, TIP31, BCR562, BCR569, BCR571, BCR573, BCR583, BCV26, BCV27, BCV28