All Transistors. BCR555 Datasheet

 

BCR555 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCR555
   SMD Transistor Code: XDs
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23

 BCR555 Transistor Equivalent Substitute - Cross-Reference Search

   

BCR555 Datasheet (PDF)

 ..1. Size:35K  siemens
bcr555.pdf

BCR555
BCR555

BCR 555PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1 = 2.2k, R2 = 10k)Type Marking Ordering Code Pin Configuration PackageBCR 555 XDs Q62702-C2383 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage

 ..2. Size:525K  infineon
bcr555.pdf

BCR555
BCR555

BCR555PNP Silicon Digital Transistor Built in bias resistor (R1= 2.2 k, R2= 10 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR555 XDs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage VC

 9.1. Size:35K  siemens
bcr553.pdf

BCR555
BCR555

BCR 553PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=2.2k)Type Marking Ordering Code Pin Configuration PackageBCR 553 XBs Q62702-C2371 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base volta

 9.2. Size:525K  infineon
bcr553.pdf

BCR555
BCR555

BCR553PNP Silicon Digital Transistor Built in bias resistor (R1= 2.2 k, R2= 2.2 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR553 XBs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BDT92

 

 
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