BCV47
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCV47
Código: DK_FG_FGp_FGs_FGt_FGW_ZFG
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 170
MHz
Capacitancia de salida (Cc): 3.5
pF
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BCV47
BCV47
Datasheet (PDF)
..1. Size:49K philips
bcv27 bcv47 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCV27; BCV47NPN Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN Darlington transistors BCV27; BCV47FEATURES PINNING Medium current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 base High DC current gain (min. 200
..2. Size:140K siemens
bcv27 bcv47.pdf
NPN Silicon Darlington Transistors BCV 27BCV47 For general AF applications High collector current High current gain Complementary types: BCV 26, BCV 46 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCV 27 FFs Q62702-C1474 B E C SOT-23BCV 47 FGs Q62702-C1501Maximum RatingsParameter Symbol Values UnitBCV 27 BCV 47Collector-emitter voltag
..3. Size:74K infineon
bcv27 bcv47.pdf
BCV27, BCV47NPN Silicon Darlington Transistors For general AF applications23 High collector current1 High current gain Complementary types: BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23Maximum RatingsParameter Symbol Va
..4. Size:330K htsemi
bcv47.pdf
BCV47TRANSISTOR (NPN) SOT23 FEATURES High Collector Current High Current Gain MARKING:FG 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V V Emitter-Base Voltage 10 V EBOI Collector Current 500 mA CP Collector Power Diss
..5. Size:353K kexin
bcv47.pdf
SMD Type TransistorsTransistorsNPN Darlington TransistorBCV47 Features SOT-23Unit: mm BVCEO > 60V +0.12.9 -0.1+0.10.4 -0.1 Darlington Transistor hFE > 10k @ 100mA for high gain 3 IC = 500mA high Continuous Collector Current Complementary Darlington PNP Type: BCV46 1 2C+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1B1.Base2.Emitter
..6. Size:820K cn shikues
bcv27 bcv47.pdf
BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitBCV27 40 Collector Base Voltage VCBO V BCV47 80 BCV27 30 Collector Emitter Voltage VCEO V BCV47 60 Emitter Base Voltage VEBO 10 VCollector Current IC 500 mAPeak Collector Current ICM 800 mABase Current
..7. Size:1177K cn twgmc
bcv47.pdf
BCV47BCV47BCV47BCV47BCV47TRANSISTOR(NPN)SOT-23 for preamplifier input applications 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage VCBO V 30Collector Emitter Voltage VCEO V 30 Emitter Base Voltage VEBO 10 VCollector Current IC 300 mA1Typical Thermal Resistance RJA
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