BCV47 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCV47
SMD Transistor Code: DK_FG_FGp_FGs_FGt_FGW_ZFG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: SOT23
BCV47 Transistor Equivalent Substitute - Cross-Reference Search
BCV47 Datasheet (PDF)
bcv27 bcv47 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCV27; BCV47NPN Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN Darlington transistors BCV27; BCV47FEATURES PINNING Medium current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 base High DC current gain (min. 200
bcv27 bcv47.pdf
NPN Silicon Darlington Transistors BCV 27BCV47 For general AF applications High collector current High current gain Complementary types: BCV 26, BCV 46 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCV 27 FFs Q62702-C1474 B E C SOT-23BCV 47 FGs Q62702-C1501Maximum RatingsParameter Symbol Values UnitBCV 27 BCV 47Collector-emitter voltag
bcv27 bcv47.pdf
BCV27, BCV47NPN Silicon Darlington Transistors For general AF applications23 High collector current1 High current gain Complementary types: BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23Maximum RatingsParameter Symbol Va
bcv47.pdf
BCV47TRANSISTOR (NPN) SOT23 FEATURES High Collector Current High Current Gain MARKING:FG 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V V Emitter-Base Voltage 10 V EBOI Collector Current 500 mA CP Collector Power Diss
bcv47.pdf
SMD Type TransistorsTransistorsNPN Darlington TransistorBCV47 Features SOT-23Unit: mm BVCEO > 60V +0.12.9 -0.1+0.10.4 -0.1 Darlington Transistor hFE > 10k @ 100mA for high gain 3 IC = 500mA high Continuous Collector Current Complementary Darlington PNP Type: BCV46 1 2C+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1B1.Base2.Emitter
bcv27 bcv47.pdf
BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitBCV27 40 Collector Base Voltage VCBO V BCV47 80 BCV27 30 Collector Emitter Voltage VCEO V BCV47 60 Emitter Base Voltage VEBO 10 VCollector Current IC 500 mAPeak Collector Current ICM 800 mABase Current
bcv47.pdf
BCV47BCV47BCV47BCV47BCV47TRANSISTOR(NPN)SOT-23 for preamplifier input applications 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage VCBO V 30Collector Emitter Voltage VCEO V 30 Emitter Base Voltage VEBO 10 VCollector Current IC 300 mA1Typical Thermal Resistance RJA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
