BCW30CSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW29LT1/DGeneral Purpose TransistorsBCW29LT1PNP SiliconCOLLECTORBCW30LT131BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 32 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 32 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 5.0 Vdc

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW29; BCW30PNP general purpose transistors1999 Apr 13Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETBCW29; BCW30PNP general purpose transistorsProduct data sheet 2004 Jan 13Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 collector General purpose

BCW30SMALL SIGNAL PNP TRANSISTORSType MarkingBCW30 C2 SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTING2CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND3SWITCHING 1SOT-23INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V = 0) -32 VCES BEVCEO Collector-Emitt

Discrete POWER & SignalTechnologiesFSBCW30CEBSuperSOTTM-3PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter

BCW30PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers 3and switches requiring collector currents to 300mA. Sourced from process 68.2SOT-231Mark: C21. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -32 VVCES Collecto

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT23 PNP SILICON PLANARBCW29SMALL SIGNAL TRANSISTORSBCW30ISSUE 3 - JULY 1995 T I D T I ECB T T SOT23ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i i V T 8 V I I V I V I I i i V T V I

BCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant COLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector - Emitter Voltage VCEO -32 VdcCollector - Base Voltage VCBO -32 VdcEmitter-Base Voltage VEBO -5.0 Vdc3Collector Current - Continuous IC -100

BCW30LT1General PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are AvailableCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO -32 Vdc2EMITTERCollector - Base Voltage VCBO -32 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdc3THERMAL CHARACTERISTICSCharacteris

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BCW30LT1G, SBCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318-08STYLE 6COLLECTORMAXIMUM RATINGS3Ratin

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBCW29BCW30SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingPACKAGE OUTLINE DETAILSBCW29 = C1ALL DIMENSIONS IN mmBCW30 = C2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW29 BCW30D.C. current gain at Tj = 25 C > 120 215

SEMICONDUCTORBCW29/30TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW31/32_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNIT

SMD Type TransistorsPNP Transistors BCW29~BCW30 (KCW29~KCW30)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 32 V) NPN complements: BCW31 and BCW32. 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle