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BCW60RD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCW60RD
   Código: ZD
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 125
   Paquete / Cubierta: SOT23
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BCW60RD Datasheet (PDF)

 9.1. Size:425K  motorola
bcw60alt.pdf pdf_icon

BCW60RD

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW60ALT1/DBCW60ALT1General Purpose TransistorsBCW60BLT1NPN SiliconCOLLECTORBCW60DLT131BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 32 VdcCollectorBase Voltage VCBO 32 VdcEmitterBase Voltage VEBO 5.0

 9.2. Size:120K  philips
bcw60.pdf pdf_icon

BCW60RD

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088BCW60 seriesNPN general purpose transistorsProduct data sheet 1999 Apr 22Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheetNPN general purpose transistors BCW60 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 coll

 9.3. Size:48K  philips
bcw60 3.pdf pdf_icon

BCW60RD

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW60 seriesNPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 Mar 10Philips Semiconductors Product specificationNPN general purpose transistors BCW60 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS

 9.4. Size:76K  fairchild semi
bcw60a b c d.pdf pdf_icon

BCW60RD

BCW60A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW TSTG

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 9016 | PBSS305ND | IT126 | IT2904 | BC817-40 | D45VH4 | ME8002

 

 
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