BCW60RD Specs and Replacement

Type Designator: BCW60RD

SMD Transistor Code: ZD

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 125

Noise Figure, dB: -

Package: SOT23

 BCW60RD Substitution

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BCW60RD datasheet

 9.1. Size:425K  motorola

bcw60alt.pdf pdf_icon

BCW60RD

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW60ALT1/D BCW60ALT1 General Purpose Transistors BCW60BLT1 NPN Silicon COLLECTOR BCW60DLT1 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 32 Vdc Collector Base Voltage VCBO 32 Vdc Emitter Base Voltage VEBO 5.0 ... See More ⇒

 9.2. Size:120K  philips

bcw60.pdf pdf_icon

BCW60RD

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW60 series NPN general purpose transistors Product data sheet 1999 Apr 22 Supersedes data of 1997 Mar 10 NXP Semiconductors Product data sheet NPN general purpose transistors BCW60 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 coll... See More ⇒

 9.3. Size:48K  philips

bcw60 3.pdf pdf_icon

BCW60RD

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS ... See More ⇒

 9.4. Size:76K  fairchild semi

bcw60a b c d.pdf pdf_icon

BCW60RD

BCW60A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW TSTG ... See More ⇒

Detailed specifications: BCW60CLT1, BCW60D, BCW60DLT1, BCW60FF, BCW60FN, BCW60RA, BCW60RB, BCW60RC, BC557, BCW61, BCW61ALT1, BCW61BLT1, BCW61CLT1, BCW61D, BCW61DLT1, BCW61FF, BCW61FN

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