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BCW61ALT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCW61ALT1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO236

 Búsqueda de reemplazo de transistor bipolar BCW61ALT1

 

BCW61ALT1 Datasheet (PDF)

 8.1. Size:46K  fairchild semi
bcw61a b c d.pdf

BCW61ALT1
BCW61ALT1

BCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW

 8.2. Size:21K  samsung
bcw61a b c d.pdf

BCW61ALT1
BCW61ALT1

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 ~ 150 Refer to KS5086 for grap

 8.3. Size:555K  infineon
bcw61a bcw61b bcw61c bcw61d bcx71g bcx71h bcx71j bcx71k.pdf

BCW61ALT1
BCW61ALT1

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C SO

 8.4. Size:83K  cdil
bcw61a b c d.pdf

BCW61ALT1
BCW61ALT1

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW61A BCW61BBCW61C BCW61DSILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingBCW61A = BABCW61B = BBBCW61C = BC PACKAGE OUTLINE DETAILSBCW61D = BD ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUT

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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