BCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 ~ 150 Refer to KS5086 for grap

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C SO

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW61A BCW61BBCW61C BCW61DSILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingBCW61A = BABCW61B = BBBCW61C = BC PACKAGE OUTLINE DETAILSBCW61D = BD ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUT