All Transistors. BCW61ALT1 Datasheet

 

BCW61ALT1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCW61ALT1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO236

 BCW61ALT1 Transistor Equivalent Substitute - Cross-Reference Search

   

BCW61ALT1 Datasheet (PDF)

 8.1. Size:46K  fairchild semi
bcw61a b c d.pdf

BCW61ALT1
BCW61ALT1

BCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW

 8.2. Size:21K  samsung
bcw61a b c d.pdf

BCW61ALT1
BCW61ALT1

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 ~ 150 Refer to KS5086 for grap

 8.3. Size:555K  infineon
bcw61a bcw61b bcw61c bcw61d bcx71g bcx71h bcx71j bcx71k.pdf

BCW61ALT1
BCW61ALT1

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C SO

 8.4. Size:83K  cdil
bcw61a b c d.pdf

BCW61ALT1
BCW61ALT1

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW61A BCW61BBCW61C BCW61DSILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingBCW61A = BABCW61B = BBBCW61C = BC PACKAGE OUTLINE DETAILSBCW61D = BD ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUT

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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