BCW68G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BCW68GCESOT-23BMark: DGPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at currents to 500 mA. Sourced from Process 63.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 V3VEBO Emitter-Base Voltage 5.0 VIC

BCW68 series45 V, 800 mA PNP general-purpose transistorRev. 1 21 April 2017 Product data sheet1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.NPN complements: BCW66F/G/H2 Features and benefits High current AEC-Q101 qualified3 Applications General-purpose switching and amplification4

BCW68GFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. "Green" Device (Note 1) PNP Small Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum R

BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. SOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 45 VEmitter Base Voltage -VEBO 5 VCollector Current -

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW68GLT1/DGeneral Purpose TransistorBCW68GLT1PNP SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

BCW68GLT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO -45 Vdc2EMITTERCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -800 mAdc3

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

BCW68GLGeneral Purpose TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiring www.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Vo

FM120-M WILLASBCW68GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch procesPNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to