BCW68G PDF and Equivalents Search

 ..1. Size:230K  fairchild semi

 bcw68g.pdf

BCW68G C E SOT-23 B Mark DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V 3 VEBO Emitter-Base Voltage 5.0 V IC... See More ⇒

 ..2. Size:266K  nxp

 bcw68f bcw68g bcw68h.pdf

BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements BCW66F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4... See More ⇒

 ..3. Size:447K  mcc

 bcw68g.pdf

BCW68G Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. "Green" Device (Note 1) PNP Small Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum R... See More ⇒

 ..4. Size:179K  semtech

 bcw68f bcw68g bcw68h.pdf

BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 45 V Emitter Base Voltage -VEBO 5 V Collector Current -... See More ⇒

 0.1. Size:82K  motorola

 bcw68glt.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW68GLT1/D General Purpose Transistor BCW68GLT1 PNP Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER MAXIMUM RATINGS CASE 318 08, STYLE 6 Rating Symbol Value Unit SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector... See More ⇒

 0.2. Size:65K  onsemi

 bcw68glt1g.pdf

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo... See More ⇒

 0.3. Size:108K  onsemi

 bcw68glt1.pdf

BCW68GLT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc 2 EMITTER Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc 3... See More ⇒

 0.4. Size:65K  onsemi

 nsvbcw68glt1g.pdf

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo... See More ⇒

 0.5. Size:86K  onsemi

 bcw68gl.pdf

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo... See More ⇒

 0.6. Size:292K  willas

 bcw68glt1.pdf

FM120-M WILLAS BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch proces PNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to ... See More ⇒