BCW89R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCW89R

Código: H31_H6

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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BCW89R datasheet

 9.1. Size:47K  philips
 bcw89.pdf pdf_icon

BCW89R

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW89 PNP general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 11 Philips Semiconductors Product specification PNP general purpose transistor BCW89 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 base 2 emitter APPLICATIONS 3 collector

 9.2. Size:74K  fairchild semi
 bcw89.pdf pdf_icon

BCW89R

BCW89 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers 3 and switches requiring collector currents to 300mA. Sourced from process 68. 2 SOT-23 1 Mark H3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -60 V VCES Collecto

 9.3. Size:296K  nxp
 bcw89.pdf pdf_icon

BCW89R

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.4. Size:178K  cdil
 bcw89.pdf pdf_icon

BCW89R

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCB0 max. 80 V Collector emitter voltage (open base

MOSTRAR MÁS

Otros transistores... BCW84, BCW84B, BCW84C, BCW85, BCW86, BCW87, BCW88, BCW89, S8550, BCW90, BCW90A, BCW90B, BCW90C, BCW90K, BCW90KA, BCW90KB, BCW90KC