BCW89R Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088BCW89PNP general purpose transistor1999 Apr 15Product specificationSupersedes data of 1997 Mar 11Philips Semiconductors Product specificationPNP general purpose transistor BCW89FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS3 collector

BCW89PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers 3and switches requiring collector currents to 300mA. Sourced from process 68.2SOT-231Mark: H31. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VVCES Collecto

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW89SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingBCW89 = H3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCB0 max. 80 VCollectoremitter voltage (open base

SEMICONDUCTORBCW69/70/89TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15Super Mini Packaged Transistors for Hybrid circuits.C 1.30 MAX2For Complementary with NPN Type BCW71/72, BCV71. 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/