BCW89R Specs and Replacement

Type Designator: BCW89R

SMD Transistor Code: H31_H6

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

 BCW89R Substitution

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BCW89R datasheet

 9.1. Size:47K  philips

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BCW89R

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW89 PNP general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 11 Philips Semiconductors Product specification PNP general purpose transistor BCW89 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 base 2 emitter APPLICATIONS 3 collector ... See More ⇒

 9.2. Size:74K  fairchild semi

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BCW89R

BCW89 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers 3 and switches requiring collector currents to 300mA. Sourced from process 68. 2 SOT-23 1 Mark H3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -60 V VCES Collecto... See More ⇒

 9.3. Size:296K  nxp

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BCW89R

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.4. Size:178K  cdil

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BCW89R

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector base voltage (open emitter) VCB0 max. 80 V Collector emitter voltage (open base... See More ⇒

Detailed specifications: BCW84, BCW84B, BCW84C, BCW85, BCW86, BCW87, BCW88, BCW89, S8550, BCW90, BCW90A, BCW90B, BCW90C, BCW90K, BCW90KA, BCW90KB, BCW90KC

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